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    Motorola Semiconductor Products MD2219AF

    AMPLIFIER TRANSISTOR, NPN SILICON, CASE 654-07, STYLE 1 DUAL
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    MD2219AF Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MD2219AF Motorola Semiconductor Data Library Volume 3 1974 Scan PDF
    MD2219AF Motorola The European Selection Data Book 1976 Scan PDF
    MD2219AF Motorola NPN silicon dual amplifier transistor. Scan PDF
    MD2219AF Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    MD2219AF Unknown Semiconductor Master Cross Reference Guide Scan PDF
    MD2219AF Unknown Shortform Transistor PDF Datasheet Short Form PDF
    MD2219AF Unknown Shortform Transistor PDF Datasheet Short Form PDF
    MD2219AF Raytheon Selection Guide 1977 Scan PDF

    MD2219AF Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MD2219AF Transistors NPN Multi-Chip Composite Transistor Pair Military/High-RelN Number of Devices2 Type NPN/PNP V(BR)CEO (V)40 V(BR)CBO (V) I(C) Max. (A)500m P(D) Max. (W)400m Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition)


    Original     		PDF MD2219AF Freq200M

    Untitled

    Abstract: No abstract text available
    Text: \Pioau.ctit Line. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MAXIMUM RATINGS MD221BAF MD2219AF MO2218.A MD2218AF Symbol MQ2219.A MD2219AF Rating Unit Collector-Emitter Voltage VCEO 30 40 Vdc


    Original     		PDF MD221BAF MD2219AF MO2218 MD2218AF MQ2219 MD2218 MD2219 MQ2218

    Untitled

    Abstract: No abstract text available
    Text: MD2219AFHXV Transistors NPN Multi-Chip Composite Transistor Pair Military/High-RelN Number of Devices2 Type NPN/PNP NPN V(BR)CEO (V)50 V(BR)CBO (V)75 I(C) Max. (A)200m P(D) Max. (W)400m Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)10u


    Original     		PDF MD2219AFHXV

    Untitled

    Abstract: No abstract text available
    Text: MD2219AFHS Transistors NPN Multi-Chip Composite Transistor Pair Military/High-RelN Number of Devices2 Type NPN/PNP NPN V(BR)CEO (V)50 V(BR)CBO (V)75 I(C) Max. (A)200m P(D) Max. (W)400m Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)10u


    Original     		PDF MD2219AFHS

    Untitled

    Abstract: No abstract text available
    Text: MD2219AFHX Transistors NPN Multi-Chip Composite Transistor Pair Military/High-RelN Number of Devices2 Type NPN/PNP NPN V(BR)CEO (V)50 V(BR)CBO (V)75 I(C) Max. (A)800m P(D) Max. (W)400m Minimum Operating Temp (øC)-65õ Maximum Operating Temp (øC)200õ I(CBO) Max. (A)10n


    Original     		PDF MD2219AFHX

    MD2219AFHXV

    Abstract: md2219af MMCM2222AHXV MMCM2222AHXV/HS
    Text: MOTOROLA SC XSTR S/R F 4bE » • b3b72S4 0012675 2 ■ flO T b '7 ^ 2 7 -O f MOTOROLA SEMICONDUCTOR! TECHNICAL DATA É&â DM0 MD2219AFHXV/HS (DUAL) MMCM2222AHXV/HS (SINGLE) Surface Mountable Small-Signal Transistors u /fiii Discrete Military Operation 50 Volt, 200 Milliampere Bipolar NPN


    OCR Scan     		PDF b3b72S4 MD2219AFHXV/HS MMCM2222AHXV/HS MMCM2222A MD2219AF MMCM2222 MD2219AFHXV MMCM2222AHXV MMCM2222AHXV/HS

    MQ-2

    Abstract: No abstract text available
    Text: MOTOROLA SC XSTRS/R F -f-WX} 15E D I b3b7554 DGfibSEB 7 | M A X I M U M R A T IN G S Rating Symbol MD2218,A MD2219A.F MQ2218/A MD2218AF MQ2219,A MD2219AF Unit Collector-Emitter Voltage v CEO 30 40 Vdc Collector-Base Voltage VCBO 60 75 Vdc Emitter-Base Voltage


    OCR Scan     		PDF b3b7554 MD2218 MD2219A MQ2218/ MD2218AF MQ2219 MD2219AF MD2219A MD2218AF, MD2219F MQ-2

    md2219AFHXV

    Abstract: No abstract text available
    Text: MD2219AFHXV . CRYSTALONCS , 280S Veterans Highway NPN Silicon Dual Small-Signal Transistors su ite u Ronkonkoma. m y. 1 1779 . . designed for general-purpose switching and amplifier applications. M A X IM U M R A T IN G S Symbol Value Unit Collector-Emitter Voltage


    OCR Scan     		PDF MD2219AFHXV

    MD218

    Abstract: MD2219 MD2218 WE VQE 11 E MD2218A MD2218AF MD2218F MD2219A MD2219AF MD2219F
    Text: MD2218, MD2218A SILICON MD2218F, MD2218AF MD2219, MD2219A MD2219F, MD2219AF MQ2218,A,MQ2219,A MULTIPLE SILICON ANNULAR TRANSISTORS NPN SILICON MULTIPLE TRANSISTORS . . . designed for use as differential am plifiers, dual general-purpose am plifiers, front end detectors and temperature compensation ap­


    OCR Scan     		PDF MD2218 MD2218A MD2218F, MD2218AF MD2219, MD2219A MD2219F, MD2219AF MQ2218, MQ2219 MD218 MD2219 WE VQE 11 E MD2218A MD2218F MD2219F

    72s4

    Abstract: MD2218 MD2218AF MD2218F MD2219 MD2219AF MD2219F MQ2218 MQ2219
    Text: MOTOROLA SC 6367254 -CXSTRS/R Tb F> MO TO RO L A SC XSTRS/R D E ^ ti3Li7E!54 82435 96D F M D 2 2 1 8A F M D2219AF M 02218, A MD2218AF Symbol M 02219,A MD2219AF VCEO 30 40 Collector-Base Voltage VcBO 60 75 Vdc Emitter-Base Voltage V EBO 5.0 6.0 Vdc 500 *C


    OCR Scan     		PDF MD2218 MD2219 M02218, MQ2219 MD2218AF MD2219AF MD2218F MD2219F 72s4 MQ2218

    Q2219

    Abstract: Q2219A uj 44 MQ-2
    Text: MOTOROLA SC ÍXSTRS/R 6367254 Tb F> MOTOROLA SC XSTRS/R DE~ | t i B t i T S S M 96D 8 2 4 3 5 _ T F □ G f l E Ll 3 S D ^ i- 9 M A X I M U M R A T IN G S Symbol Rating M D 22 18 A F M D 2219AF M 02218, A MD2218AF M Q2219,A MD2219AF U nit Cotlector-Emitter Voltage


    OCR Scan     		PDF 2219AF MD2218AF Q2219 MD2219AF MD2218 MD2219 MQ2218 MQ2219 Q2219A uj 44 MQ-2

    MMBF112L

    Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
    Text: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty


    OCR Scan     		PDF 06050L MMBD914L BAS16L BAL99L MBAV70L MBAV99L MBAV74 BD2835XL MBD2836XL MMBD2837XL MMBF112L MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211

    powec rm 1110

    Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
    Text: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor


    OCR Scan     		PDF 111ii MZ5558 Z5555, Z5556, MZ5557 powec rm 1110 rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor

    1N5438

    Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
    Text: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­


    OCR Scan     		PDF 27TfC 1N5438 tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175

    BC140 equivalent

    Abstract: BCY34 2N328A BCY31 bcy59 equivalent BC109 MOTOROLA BCY25 DH3725CN bc108c equivalent 2N3133 MOTOROLA
    Text: Discrete Devices Transistors C ont. Medium Current, High-Speed Amplifiers Maximum Ratings Type Polarity PD Ambient mW Electrical Characteristics @ 25° C VCB VCE VEB Volts Volts Volts hfe VcE(Sat) @ Ic/lß @ ic Min/Max mA Volts mA/mA ft MHz Min Cob pF tON tOFF


    OCR Scan     		PDF 2N721A 2N722A 2N1132A 2N1132B 2N2217 2N2218 2N2218A 500/5NPN BSY51 BC140 equivalent BCY34 2N328A BCY31 bcy59 equivalent BC109 MOTOROLA BCY25 DH3725CN bc108c equivalent 2N3133 MOTOROLA

    varactor 36z

    Abstract: germanium halbleiter index transistor Halbleiter Buch 2n5347 2n3054 working of reactance modulator JE2955 germanium transistor 2N3902
    Text: TH€ SEMICONDUCTOR DATA LIBRARY FIRST EDITION prepared by Technical Information Center T h e in fo rm a tio n in th is bo o k has been c a re fu lly checked and is believed to be re lia b le ; ho w ever, no re s p o n s ib ility is assumed fo r inaccuracies. F u rth e rm o re , th is in fo rm a tio n does n o t convey to the purchaser o f s e m ic o n d u c to r


    OCR Scan     		PDF Z1000 MZ4614 MZ4627 1N4099 M4L3052 M4L3056 1N5158 varactor 36z germanium halbleiter index transistor Halbleiter Buch 2n5347 2n3054 working of reactance modulator JE2955 germanium transistor 2N3902

    germanium transistor

    Abstract: 2N5121 2N5418 2N5539 2N5637 V2205 MM8006
    Text: INTRODUCTION I I N . . . INDEX Numerical index of ElA-registered device types, w ith major electrical specifications 2N . . . & 3N . . . INDEX Numerical index of ElA-registered device types, with major electrical specifications DEVICE INDEX Complete alpha-numeric index of all device types


    OCR Scan     		PDF

    MRF660

    Abstract: MHQ6002HX MHM25N20HX MBR5825 MRF5160 MM3227H MHM12N50HX MBR5825H MM3227 mrf522
    Text: MOTOROLA SC XSTRS/R F 2 bE D • b3b?2S4 GGT0Ô7G 4 ■ T - MIL-Processed Semiconductors (Continued) SELECTOR GUIDE POWER TRANSISTORS TMOS FETs These TMOS Power FETs are designed for high speed power switching applications such as switching regulators, converters, solenoid and relay drivers, and PWM motor


    OCR Scan     		PDF i0fi70 O-254AA MHM5N100HX, MHM12N50HX, MHM25N20HX, MHM25N10HX, MHQ3468HX, MQ3468HX, MHQ4261HX, MQ4261HX, MRF660 MHQ6002HX MHM25N20HX MBR5825 MRF5160 MM3227H MHM12N50HX MBR5825H MM3227 mrf522

    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


    OCR Scan     		PDF

    MD8003

    Abstract: 2n3817 MD918A MD7003A MD8002 MD2219 MD2219A MD2219AF MD2219F MD2369
    Text: D U A L T R A N S IS T O R S r ’S oo CL < < c 5 QC Subscript »0 PD Watts One Oie Only •c Amp Max. hFE 0.05 0.05 0.05 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.6 0.6 0.6 0.20 0.20 0.20 0.5 0.5 0.03 0.05 0.05 0.03 0.03 0.03 0.5 0.5 0.5 0.5 0.03 0.03 0.03 0.03 0.03


    OCR Scan     		PDF MD918 MD918A MD918AF MD1129F MD2219 MD2219A 2N2913 2N2915 2N2917 2N2919 MD8003 2n3817 MD7003A MD8002 MD2219AF MD2219F MD2369

    EQUIVALENT TRANSISTOR bc109c

    Abstract: equivalent transistor 2N1711 Transistor BC107 motorola bc109 Transistor Equivalent list EQUIVALENT TRANSISTOR bc108 Transistor BC107b motorola TRANSISTOR pnp BC140 TRANSISTOR BC140 BC140 equivalent transistor bc107b equivalent
    Text: Discrete Devices Transistors Cont. Low Level Amplifiers Maximum Ratings Type Polarity Pd Ambient mW Electrical Characteristics @ 25° C VCB VCE V e b Volts Volts Volts HpE *C Min/Max mA V c E (S a t) @ Ic/lß Volts mA/mA ft MHz Min NF@f Cob pF Max dB


    OCR Scan     		PDF 2N327A 2N327B 2N328A 2N328B 2N329A 2N329B 2N760 2N760A BT2946 2N2946 EQUIVALENT TRANSISTOR bc109c equivalent transistor 2N1711 Transistor BC107 motorola bc109 Transistor Equivalent list EQUIVALENT TRANSISTOR bc108 Transistor BC107b motorola TRANSISTOR pnp BC140 TRANSISTOR BC140 BC140 equivalent transistor bc107b equivalent

    SP3725QDB

    Abstract: 2N5146 2N3444 2N1711 equivalent 2N2904A MOTOROLA 2N3763 MOTOROLA 2N3252 MOTOROLA transistor 2n1711 2N3244 2N3252
    Text: Transistors Cont. Discrete Devices Space Saving Devices Maximum Ratings Electrical Characteristics @ 25° C Am bient Pq Type Polarity One Both Side Sides mW mW VCB Volts V ce Volts V eb Volts M in/M ax Frequency V c e (Sat) @ i c /i B H f e @ ic mA Volts


    OCR Scan     		PDF SP3763Q0 SP3763QF O-116 SP3725QDB SP34G7ADB O-116 BSY51 2N2218 BSY52 2N5146 2N3444 2N1711 equivalent 2N2904A MOTOROLA 2N3763 MOTOROLA 2N3252 MOTOROLA transistor 2n1711 2N3244 2N3252

    wiring diagram audio amplifier ic 6283

    Abstract: germanium Transistor Shortform Datasheet & Cross References halbleiter index transistor 2N5160 MOTOROLA transistor ITT 2907 1N5159 2N 5574 inverter welder 4 schematic diagrams de ic lg 8838
    Text: THC SEMICONDUCTOR DATA LIBRARY SECOND EDITION VOLUME H prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the purchaser of semiconductor


    OCR Scan     		PDF 4L3052 4L3056 wiring diagram audio amplifier ic 6283 germanium Transistor Shortform Datasheet & Cross References halbleiter index transistor 2N5160 MOTOROLA transistor ITT 2907 1N5159 2N 5574 inverter welder 4 schematic diagrams de ic lg 8838

    2N697 equivalent

    Abstract: 2N1711 equivalent 2N2219A BSX45 2N1711 MOTOROLA 2N3914 2N1711 DH3467CD N2904A BFY39 BFY50 equivalent
    Text: Discrete Devices Transistors Cont. European “Pro Electron” Types (Cont.) Near Equivalent Near Equivalent Polarity Pkg. Type BFX30 BFX37 BFX65 BFX84 BFX85 2 N2904A 2N2605* 2N2605* 2N1711 2N171-1 PNP PNP PNP NPN NPN TO-39 T O -18 T O -18 TO-39 TO-39 BSX45-10


    OCR Scan     		PDF BFX30 N2904A BFX37 2N2605* BFX65 BFX84 2N1711 BFX85 2N171-1 2N697 equivalent 2N1711 equivalent 2N2219A BSX45 2N1711 MOTOROLA 2N3914 DH3467CD BFY39 BFY50 equivalent