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    MBR340 Price and Stock

    onsemi MBR340

    DIODE SCHOTTKY 40V 3A AXIAL
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    MBR340 56
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    NexGen Digital MBR340 100
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    onsemi MBR340G

    DIODE SCHOTTKY 40V 3A AXIAL
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    Newark MBR340G Bulk 2,480
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    MBR340G Bulk 2,000
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    Component Electronics, Inc MBR340G 10
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    SMC Diode Solutions MBR340S

    DIODE SCHOTTKY 40V 3A TO277B
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    DigiKey MBR340S Reel 80,000
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    onsemi MBR340RL

    DIODE SCHOTTKY 40V 3A AXIAL
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    Rochester Electronics LLC MBR340PRL

    RECTIFIER DIODE, SCHOTTKY
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    MBR340 Datasheets (24)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MBR340 EIC Semiconductor Schottky Barrier Rectifiers Original PDF
    MBR340 International Rectifier Schottky Rectifier Original PDF
    MBR340 International Rectifier Schottky Rectifier Original PDF
    MBR340 Micro-Electro-Magnetical Tech 40 V, Schottky die Original PDF
    MBR340 On Semiconductor Axial Lead Rectifier Original PDF
    MBR340 Microsemi Schottky Rectifier Scan PDF
    MBR340 Motorola Switchmode Datasheet Scan PDF
    MBR340 Motorola European Master Selection Guide 1986 Scan PDF
    MBR340 Motorola Axial Lead Rectifiers Scan PDF
    MBR340 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    MBR340 On Semiconductor Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Schottky Rectifier, 40V, 3A, Pkg Style Case 267-03 Scan PDF
    MBR340-D On Semiconductor Axial Lead Rectifier Original PDF
    MBR340G On Semiconductor 3A 40V Schottky Rectifier Original PDF
    MBR340M Motorola Semiconductor Data Library Volume 3 1974 Scan PDF
    MBR340M Unknown Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF
    MBR340P On Semiconductor MBR340 - DIODE 3 A, 40 V, SILICON, RECTIFIER DIODE, PLASTIC, CASE 267-03, 2 PIN, Rectifier Diode Original PDF
    MBR340P Motorola Schottky Barrier Rectifier Scan PDF
    MBR340P Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    MBR340PRL On Semiconductor MBR340 - DIODE 3 A, 40 V, SILICON, RECTIFIER DIODE, PLASTIC, CASE 267-03, 2 PIN, Rectifier Diode Original PDF
    MBR340RL On Semiconductor SCHOTTKY BARRIER RECTIFIER 3.0 AMPERES 40 VOLTS Original PDF

    MBR340 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MBR340

    Abstract: 200Reverse
    Text: Bulletin PD-20593 rev. B 03/03 MBR340 SCHOTTKY RECTIFIER 3.0 Amp Description/ Features Major Ratings and Characteristics Characteristics MBR340 Units IF AV Rectangular 3.0 A 30/40 V IFSM @ tp = 5 µs sine 430 A VF 0.6 V - 40 to 150 °C waveform VRRM @ 3 Apk, TJ = 25°C


    Original     		PDF PD-20593 MBR340 MBR340 200Reverse

    MBR320

    Abstract: mbr340 MBR330
    Text: MBR320 ~ MBR340 SCHOTTKY BARRIER RECTIFIER DIODES PRV : 20 - 40 Volts IO : 3.0 Amperes DO-201AD FEATURES : * * * * * * * High current capability High surge current capability High reliability High efficiency Low power loss Low forward voltage drop Pb / RoHS Free


    Original     		PDF MBR320 MBR340 DO-201AD DO-201AD UL94V-O MIL-STD-202, MBR320 mbr340 MBR330

    Untitled

    Abstract: No abstract text available
    Text: MBR340P Diodes General Purpose Schottky Rectifier Military/High-RelN I O Max.(A) Output Current3.0 @Temp (øC) (Test Condition)95Ô V(RRM)(V) Rep.Pk.Rev. Voltage40 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.80¥ V(FM) Max.(V) Forward Voltage950m @I(FM) (A) (Test Condition)9.4


    Original     		PDF MBR340P Voltage40 Voltage950m Current20m

    Untitled

    Abstract: No abstract text available
    Text: MBR340 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low- voltage,


    Original     		PDF MBR340

    MOTOROLA B360

    Abstract: MBR340 B320 B330 B340 B350 B360 MBR320 MBR330 MBR350
    Text: MOTOROLA Order this document by MBR320/D SEMICONDUCTOR TECHNICAL DATA MBR320 MBR330 MBR340 MBR350 MBR360 Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with


    Original     		PDF MBR320/D MBR320 MBR330 MBR340 MBR350 MBR360 MBR340 MBR360 MOTOROLA B360 B320 B330 B340 B350 B360 MBR320 MBR330 MBR350

    MBR340

    Abstract: B340 MBR340RL
    Text: MBR340 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low- voltage,


    Original     		PDF MBR340 MBR340/D MBR340 B340 MBR340RL

    MBR340

    Abstract: MBR340G MBR340RL MBR340RLG
    Text: MBR340 Preferred Device Axial Lead Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage,


    Original     		PDF MBR340 MBR340/D MBR340 MBR340G MBR340RL MBR340RLG

    Untitled

    Abstract: No abstract text available
    Text: MBR340 SERIES SCHOTTKY BARRIER RECTIFIERS VOLTAGE 40 to 200 Volts 3.0 Amperes CURRENT FEATURES 0.052 1.3 0.048(1.2) 1.0(25.4)MIN. • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • High Current Capability and Low Forward Voltage Drop


    Original     		PDF MBR340 2002/95/EC DO-201AD MIL-STD-750 2010-REV

    MBR340

    Abstract: MBR340G MBR340RL MBR340RLG
    Text: MBR340 Preferred Device Axial Lead Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage,


    Original     		PDF MBR340 MBR340 MBR340G MBR340RL MBR340RLG

    MBR340

    Abstract: No abstract text available
    Text: Micro-Electro-Magnetical Tech Co. SCHOTTKY DIE SPECIFICATION TYPE: MBR340 Single Anode General Description: 40 V 3 A Low Ir ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Ir=1mA(for wafer form) Ir=0.5mA (for dice form) Average Rectified Forward Current


    Original     		PDF MBR340 14mil) MBR340

    Untitled

    Abstract: No abstract text available
    Text: VS-MBR340, VS-MBR340-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 3 A FEATURES • Low profile, axial leaded outline • Very low forward voltage drop Cathode Anode • High frequency operation • High purity, high temperature epoxy encapsulation for enhanced mechanical


    Original     		PDF VS-MBR340, VS-MBR340-M3 2002/95/EC DO-201AD VS-MBR340. 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: MBR340 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage,


    Original     		PDF MBR340

    Untitled

    Abstract: No abstract text available
    Text: MBR 340 SCHOTTKY DIE SPECIFICATION TYPE: MBR340 RSingle □Dual Anode General Description: 40 V 3 A (Low Ir) SYM ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Ir=1mA(for wafer form) VRRM Ir=0.5mA (for dice form) IFAV Average Rectified Forward Current Maximum Instantaneous Forward Voltage


    Original     		PDF MBR340 25mil)

    MBR340

    Abstract: No abstract text available
    Text: MBR340 SERIES SCHOTTKY BARRIER RECTIFIERS VOLTAGE 40 to 200 Volts 3.0 Amperes CURRENT FEATURES 0.052 1.3 0.048(1.2) 1.0(25.4)MIN. • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • High Current Capability and Low Forward Voltage Drop


    Original     		PDF MBR340 2002/95/EC DO-201AD MIL-STD-750 50mVp-p 2010-REV

    rectifier diode 3A

    Abstract: No abstract text available
    Text: MBR340 Vishay High Power Products Schottky Rectifier, 3 A FEATURES • Low profile, axial leaded outline Cathode Anode • Very low forward voltage drop RoHS • High frequency operation COMPLIANT • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance


    Original     		PDF MBR340 MBR340 12-Mar-07 rectifier diode 3A

    Untitled

    Abstract: No abstract text available
    Text: Bulletin PD-20593 rev. C 12/04 MBR340 SCHOTTKY RECTIFIER 3.0 Amp Description/ Features Major Ratings and Characteristics Characteristics Values Units IF AV Rectangular 3.0 A 30/40 V IFSM @ tp = 5 µs sine 430 A VF 0.6 V - 40 to 150 °C waveform VRRM @ 3 Apk, TJ = 25°C


    Original     		PDF PD-20593 MBR340 MBR340 12-Mar-07

    MBR340

    Abstract: B340 MBR340RL
    Text: MBR340 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage,


    Original     		PDF MBR340 r14525 MBR340/D MBR340 B340 MBR340RL

    MBR340

    Abstract: C-16
    Text: MBR340 Vishay High Power Products Schottky Rectifier, 3 A FEATURES • Low profile, axial leaded outline • Very low forward voltage drop Cathode Anode • High frequency operation • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance


    Original     		PDF MBR340 MBR340 18-Jul-08 C-16

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MBR320/D MBR320 MBR330 MBR340 MBR350 MBR360 Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with


    OCR Scan     		PDF MBR320/D MBR320 MBR330 MBR340 MBR350 MBR360 MBR340 MBR360 b3b72Â MBR320

    MBR340M

    Abstract: MBR320M MBR330M 0450B
    Text: MBR320M MBR330M MBR340M SCHOTTKY BARRIER R EC TIFIERS HOT CARR IE R POWER R EC TIFIERS 3 AMPERE 20, 30, 4 0 V O LTS . . . e m p lo y in g the S c h o ttk y B arrier p rin c ip le in a large area m etal-to -s ilic o n p o w er d io d e. S ta te o f th e a rt g eo m etry features e p ita x ia l c o n stru ctio n w ith o x id e passiva­


    OCR Scan     		PDF MBR320M MBR330M MBR340M MBR340M 0450B

    1N5B22

    Abstract: lm 5821 IN5822
    Text: 1N5820 MBR320P 1N5821 MBR330P 1N5822 MBR340P M M O T O R O L A I) ij s iy ; n ( * r ^ D a t a S h e p i S C H O T T K Y B A R R IE R A X I A L LE A D R E C T IF IE R S . . e m p lo yin g power diode. oxid e in The S c h o t t k y B arrier S tate-of-the-art


    OCR Scan     		PDF 1N5820 MBR320P 1N5821 MBR330P 1N5822 MBR340P 1N5B22 lm 5821 IN5822

    MBR360

    Abstract: MBR350 MBR320 B320 B330 B340 B350 B360 MBR330 MBR340
    Text: MBR320 MBR340 MBR330 MBR350 MBR360 MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA MBR340 and MBR360 are Motorola Preferred Devices A xial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal


    OCR Scan     		PDF MBR320, MBR330, MBR340, MBR350, MBR360 MBR360 MBR350 MBR320 B320 B330 B340 B350 B360 MBR330 MBR340

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MBR340/D SEMICONDUCTOR TECHNICAL DATA A xial Lead R ectifier MBR340 . . employing the Schottky Barrier principle in a large area m e tal-to-silicon power diode. S ta te -o f-th e -a rt geometry features epitaxial construction with


    OCR Scan     		PDF MBR340/D MBR340

    MBR360

    Abstract: motorola b330
    Text: MBR320 MBR340 MBR330 MBR350 MBR360 MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA M BR340 and MBR360 are M otorola Preferred Devices A xial Lead R e ctifie rs . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal


    OCR Scan     		PDF MBR320 MBR340 MBR330 MBR350 MBR360 BR340 MBR360 motorola b330