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    KTN2907S Search Results

    KTN2907S Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KTN2907S Korea Electronics Switching Transistor Original PDF
    KTN2907S Korea Electronics EPITAXIAL PLANAR PNP TRANSISTOR Scan PDF
    KTN2907S Korea Electronics Switching Transistor Scan PDF

    KTN2907S Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    KTN2907S SOT-23

    Abstract: KTN2907S marking zd
    Text: SEMICONDUCTOR KTN2907S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking ZD No. 1 Item Marking Device Mark ZD KTN2907S hFE Grade - - * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method


    Original     		PDF KTN2907S OT-23 KTN2907S SOT-23 KTN2907S marking zd

    ZH SOT-23

    Abstract: KTN2907S sot23 transistor marking ZH KTN2907AS KTN2907AS SOT-23
    Text: SEMICONDUCTOR KTN2907S/AS TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ・Low Leakage Current E B L L ・Low Saturation Voltage H : VCE sat =-0.4V(Max.) ; IC=-150mA, IB=-15mA. 3 G A 2 D : ICEX=-50nA(Max.) ; VCE=-30V, VEB=-0.5V.


    Original     		PDF KTN2907S/AS -150mA, -15mA. -50nA KTN2222S/2222AS. 10x8x0 ZH SOT-23 KTN2907S sot23 transistor marking ZH KTN2907AS KTN2907AS SOT-23

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTN2907S/AS TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES 2002. 4. 9 Revision No : 4 1/4


    Original     		PDF KTN2907S/AS

    alternator diode 1776 B

    Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
    Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)


    Original     		PDF Hig86-755-3679515 alternator diode 1776 B 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent

    khb*9D5N20P

    Abstract: khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor
    Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC


    Original     		PDF 2N2904E BC859 KDS135S 2N2906E BC860 KAC3301QN KDS160 2N3904 BCV71 KDB2151E khb*9D5N20P khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor

    LM8550

    Abstract: KTD2026 2SC2320 equivalent NEC 12F DATASHEET 2N3904 MOTOROLA 2sc2240 equivalent 2N3906 MOTOROLA 2sc1983 2N5400 MOTOROLA 2SD1960
    Text: Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC 2N2222/A Motorola KTN2222/A 2SA1150 Toshiba KTA1272 2SA1510 Sanyo KRA1 10S 2SB546A NEC KTB 1369 2N2369/A Motorola KTN2369/A 2SA1151 NEC KTA1266 2SA1511 Sanyo KRA1 10M 2SB560 Sanyo


    Original     		PDF 2N2222/A KTN2222/A 2SA1150 KTA1272 2SA1510 2SB546A 2N2369/A KTN2369/A 2SA1151 KTA1266 LM8550 KTD2026 2SC2320 equivalent NEC 12F DATASHEET 2N3904 MOTOROLA 2sc2240 equivalent 2N3906 MOTOROLA 2sc1983 2N5400 MOTOROLA 2SD1960

    KIA78*pI

    Abstract: transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P
    Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode KEC 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC


    Original     		PDF 2N2904E BC859 KDS135S 2N2906E BC860 KAC3301QN KDS160 2N3904 BCV71 KDB2151E KIA78*pI transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


    Original     		PDF

    oz960

    Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
    Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors


    Original     		PDF KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTN2222S/AS TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E B L L ・Low Leakage Current 2 A H : VCE sat =0.3V(Max.) ; IC=150mA, IB=15mA. 3 G ・Low Saturation Voltage D : ICEX=10nA(Max.) ; VCE=60V, VEB(OFF)=3V.


    Original     		PDF KTN2222S/AS 150mA, KTN2907S/2907AS. 10x8x0

    KTN2222AS

    Abstract: KTN2222S 2907A
    Text: SEMICONDUCTOR KTN2222S/AS TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E B L L Low Leakage Current D : ICEX=10nA Max. ; VCE=60V, VEB(OFF)=3V. 2 A 3 G Low Saturation Voltage H : VCE(sat)=0.3V(Max.) ; IC=150mA, IB=15mA.


    Original     		PDF KTN2222S/AS 150mA, KTN2907S/2907AS. KTN2222S KTN2222AS x10-4 150mA KTN2222AS 2907A

    MB4213

    Abstract: F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD
    Text: Table of Contents Index 5 SMD Transistors Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal Darlington Transistors


    Original     		PDF SSIP-12 KIA6283K KIA7217AP SSIP-10 KIA6240K KIA6801K KIA6901P/F MB4213 F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD

    KF6N60

    Abstract: 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05
    Text: Factory : #149, Gongdan-1-dong Gumi, Gyeongsangbuk-do, KOREA 上 http://www.kec.co.kr http://www.keccorp.com Head office : #275-5, Yangjae-dong, Seocho-gu Seoul, KOREA 海 ww 众 w. 韩 ck 授 b- 权 sh 代 .c 理 om 2014 Semiconductor Product Guide KEC CORPORATION


    Original     		PDF USFB053 USFB13 USFB13A USFB13L USFB14 USFZ10V USFZ11V USFZ12V USFZ13V USFZ15V KF6N60 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05

    KTN2222AS

    Abstract: KTN2222S
    Text: SEMICONDUCTOR KTN2222S/AS TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E B L L ᴌLow Leakage Current ᴌLow Saturation Voltage 3 G A 2 D : ICEX=10nA Max. ; VCE=60V, VEB(OFF)=3V. H : VCE(sat)=0.3V(Max.) ; IC=150mA, IB=15mA.


    Original     		PDF KTN2222S/AS 150mA, KTN2907S/2907AS. KTN2222S KTN2222AS 10x8x0 KTN2222AS

    ktn2907as

    Abstract: KTN2907S
    Text: SEMICONDUCTOR TECHNICAL DATA KTN2907S/AS EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES A MILLIMETERS 2.93+0.20 B 1.30+0.20/—0.15 C D 1.30 MAX 0.45+0.15/—0.05 E 2.40+0.3 0 /- 0 .20 DIM • Low Leakage Current


    OCR Scan     		PDF KTN2907S/AS -50nA -150mA, -15mA. KTN2222S/2222AS. KTN2907S KTN2907AS 20TAGE 10x8x0 ktn2907as

    KTN2222AS

    Abstract: KTN2222S KTN2222AS SOT-23
    Text: SEMICONDUCTOR TECHNICAL DATA KTN2222S/AS EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : IcEx-10nA M ax. ; V ce-60V , V eb(off)-3V. • Low Saturation Voltage : VcE(sat)=0.3V(Max.) ; Ic=150mA, lB=15mA.


    OCR Scan     		PDF KTN2222S/AS 15QmA, KTN2907S/2907AS. KTN2222S KTN2222AS 10x8x0 KTN2222AS KTN2222AS SOT-23

    sot-23 MARKING 25J

    Abstract: sot-23 25J sot-23 MARK 25J KTN2222AS KTN2222S KTN2222AS SOT-23
    Text: KEC SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. KTN2222S/AS EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current ; IcEx=10nA M ax. ; V ce=60V, V eb <o f f )=3 V . • Low Saturation Voltage


    OCR Scan     		PDF KTN2222S/AS 150mA, KTN2907S/2907AS. KTN2222S KTN2222AS 10x8x0 sot-23 MARKING 25J sot-23 25J sot-23 MARK 25J KTN2222AS KTN2222AS SOT-23