Untitled
Abstract: No abstract text available
Text: ChenYang Technologies GmbH & Co. KG CYSJ362A GaAs HALL-EFFECT ELEMENTS CYSJ362A series Hall-effect element is a ion-implanted magnetic field sensor made of monocrystal gallium arsenide GaAs semiconductor material group III-V using ion-implanted technology.
|
Original
|
PDF
|
CYSJ362A
THS119,
KSY14
KSY44
D-85464
|
Untitled
Abstract: No abstract text available
Text: ChenYang Technologies GmbH & Co. KG CYSJ362A GaAs HALL-EFFECT ELEMENTS CYSJ362A series Hall-effect element is a ion-implanted magnetic field sensor made of monocrystal gallium arsenide GaAs semiconductor material group III-V using ion-implanted technology.
|
Original
|
PDF
|
CYSJ362A
THS119,
KSY14
KSY44
D-85464
|
CYSJ362A
Abstract: No abstract text available
Text: ChenYang Technologies GmbH & Co. KG CYSJ362A GaAs HALL-EFFECT ELEMENTS CYSJ362A series Hall-effect element is a ion-implanted magnetic field sensor made of monocrystal gallium arsenide GaAs semiconductor material group III-V using ion-implanted technology.
|
Original
|
PDF
|
CYSJ362A
THS119,
KSY14
KSY44
D-85464
|
Untitled
Abstract: No abstract text available
Text: ChenYang Technologies GmbH & Co. KG CYSJ362A GaAs HALL-EFFECT ELEMENTS CYSJ362A series Hall-effect element is a ion-implanted magnetic field sensor made of monocrystal gallium arsenide GaAs semiconductor material group III-V using ion-implanted technology.
|
Original
|
PDF
|
CYSJ362A
THS119,
KSY14
KSY44
D-85464
|
Untitled
Abstract: No abstract text available
Text: ChenYang Technologies GmbH & Co. KG CYSJ302A GaAs HALL-EFFECT ELEMENTS CYSJ302A series Hall-effect element is a ion-implanted magnetic field sensor made of monocrystal gallium arsenide GaAs semiconductor material group III-V using ion-implanted technology.
|
Original
|
PDF
|
CYSJ302A
THS119,
KSY14
KSY44
D-85464
|
Untitled
Abstract: No abstract text available
Text: ChenYang Technologies GmbH & Co. KG CYSJ302C GaAs HALL-EFFECT ELEMENTS CYSJ302C series Hall-effect element is a ion-implanted magnetic field sensor made of monocrystal gallium arsenide GaAs semiconductor material group III-V using ion-implanted technology.
|
Original
|
PDF
|
CYSJ302C
THS119,
KSY14
KSY44
D-85464
|
Hall Siemens
Abstract: Inductive current sensor of measurement KSY44 Siemens Hall 175 hall sensor Hall sensors Siemens AF03 4 pin hall sensor CIRCUIT BREAKER siemens hall 4 pins
Text: SIEMENS KSY44 Hall Sensor Preliminary Data Features • • • • • • • • • High sensitivity High operating temperature Small linearity error Low offset voltage Low TC of sensitivity Specified TC of offset voltage Low inductive zero component Package thickness 0.7 mm
|
OCR Scan
|
PDF
|
KSY44
Q62705-K265
00S2fi47
fi235b05
Hall Siemens
Inductive current sensor of measurement
KSY44
Siemens Hall
175 hall sensor
Hall sensors Siemens
AF03
4 pin hall sensor
CIRCUIT BREAKER siemens
hall 4 pins
|
Untitled
Abstract: No abstract text available
Text: SIEMENS KSY44 Hall Sensor Preliminary Data Features • • • • • • • • • High sensitivity High operating temperature Small linearity error Low offset voltage Low TC of sensitivity Specified TC of offset voltage Low inductive zero component Package thickness 0.7 mm
|
OCR Scan
|
PDF
|
KSY44
Q62705-K265
0235bGS
|
Untitled
Abstract: No abstract text available
Text: SIEMENS KSY 44 GaAs-Hall Effect Sensor Preliminary Data Features High sensitivity High operating temperature Small linearity error Low offset voltage Low TC of sensitivity Specified TC of offset voltage Low inductive zero component Package thickness 0.7 mm
|
OCR Scan
|
PDF
|
Q62705-K265
fl235b05
00bfl4fl3
KSY44
fl23Sb05
|
Untitled
Abstract: No abstract text available
Text: Alphanumeric Type Index SIEMENS Type Ordering Code BH 201 Page Q68000-A8759- F261 143 BH 701 Q68000-A8760- F261 156 BH 704 Q68000-A8761-F261 159 BH 705 Q68000-A8762-F261 162 BH-900 Series on request 164 FH 301-20 Q68000-A8764- F261 146 FH 301-40 Q68000-A8765-F261
|
OCR Scan
|
PDF
|
Q68000-A8759-
Q68000-A8760-
Q68000-A8761-F261
Q68000-A8762-F261
BH-900
Q68000-A8764-
Q68000-A8765-F261
Q68000-A8766-F261
Q68000-A8767-F261
Q65210-L101
|
78o5
Abstract: KSY44 KTY 20-5 25L90 KPY 4 KTY 23-5 KTY 11-6 KSY63 BH-705 KTY13-51
Text: Halbleiter-Sensoren Semiconductor Sensors Silizium-Temperatur-Sensoren Silicon Temperature Sensors T yp B a s ic R é s is ta n c e 2 5 °C ^rnax ( 2 5 “O T h e rm a l tim e c o n s ta n t 0 - 6 3 % T yp e il mA in still a ir KTY 102> KTY 10-5 KTY 10-6
|
OCR Scan
|
PDF
|
|
Q62902-B146
Abstract: gh 312 SBV 604 Q65312-L100-U KSY13 SBV613 Q65310-L100-U75 BH7014
Text: Halbleiter-Sensoren Semiconductor Sensors Feldplatten-Potentiometer ohne Verstärker Typ Type FP 312 L 100 MR Potentiometer Without Amplifier Hot Jt Vout %H n Grad/deg Ft % Ta °C Ordering Code Bild Fig. 8 850 40 75 2.5 - 2 5 . +70 Q65312-L100-U 9 Feldplatten-Potentiometer mit Verstärker
|
OCR Scan
|
PDF
|
Q65312-L100-U
Q65310-L100-U30
Q65310-L100-U75
Q62902-B146
Q62705-K38
Q62705-K109
Q62705-K227
Q62705-K265
Q68000-A8763-F261
Fig18
Q62902-B146
gh 312
SBV 604
KSY13
SBV613
Q65310-L100-U75
BH7014
|
kty 10-9
Abstract: KTY 10-8 KSY10 FP 310 L 100-75 KSY44 KSY13 FP 210-D-250-22 254 kpy 1 KPY 4 KSY14
Text: Semiconductor Sensors Halbleiter-Sensoren Outline Drawings ¡n mm Maßbilder (in mm) FP 412 L 100 FP 412 D 250 Figure 2 FP 210 D 250-22 FP 210 L 100-22 Figure 1 Section A - A ^ P u n c h in g —points (0 .4 3 ) (» 0 . 8 ) 1 1 0. 0 4 0.1 1 3 .5 * J E S M c ]
|
OCR Scan
|
PDF
|
GPD05637
kty 10-9
KTY 10-8
KSY10
FP 310 L 100-75
KSY44
KSY13
FP 210-D-250-22
254 kpy 1
KPY 4
KSY14
|
lg 6154
Abstract: KTY 10-8 DL1416 KTY 20-5 DL440 O62902-B156-F222 Q62901-B64
Text: Alphanumerische Bestellnummern Q-Nummern Alphanumeric Ordering Codes (Q numbers) Achtung: NeueTypenbezeichnungen bei Si-Fotodetektoren und Lichtwellenleitern Attention: New type designations for Si-Photodetectors and Fiber-Optic Systems Bestellnummer lyp
|
OCR Scan
|
PDF
|
Q60215-Y62
O60215-Y63-S1
Q60215-Y65
Q60215-Y66
Q60215-Y67
Q60215-Y111-S4
Q60215-Y111-S5
Q60215-Y1111
Q60215-Y1112
Q60215-Y1113
lg 6154
KTY 10-8
DL1416
KTY 20-5
DL440
O62902-B156-F222
Q62901-B64
|
|
|
SFH 255 FA
Abstract: LR 2703 LY3360K dl340m FP310L100-75 Q68000-A8452
Text: AlphanumerischesTypenverzeichnis Alphanumeric Type Index Achtung: NeueTypenbezeichnungen bei Si-Fotodetektoren und Lichtwellenleitern Attention: New type designations for Si-Photodetectors and Fiber-Optic Systems type Bestellnummer Seite Type Bestellnummer Seite
|
OCR Scan
|
PDF
|
068000-A5018
Q68000-A5017
Q68000-A5707
Q62703-N26
Q62703-N51
Q62703-N52
Q68000-A7302
Q68000-A7303
Q68000-A7304
Q68000-A8086
SFH 255 FA
LR 2703
LY3360K
dl340m
FP310L100-75
Q68000-A8452
|
GPX06851
Abstract: monocrystalline u value 4 pin hall sensor Hall sensors Siemens Hall Siemens R20 marking hall 4 pins hall marking code 6 siemens magnetic sensors ksy44 Q62705-K265
Text: SIEMENS Hall Sensor KSY 44 Preliminary Data Features • • • • • • • • • High sensitivity High operating temperature Small linearity error Low offset voltage Low TC of sensitivity Specified TC of offset voltage Low inductive zero component
|
OCR Scan
|
PDF
|
0235tiQ5
GPX06851
monocrystalline u value
4 pin hall sensor
Hall sensors Siemens
Hall Siemens
R20 marking
hall 4 pins
hall marking code 6
siemens magnetic sensors ksy44
Q62705-K265
|
Untitled
Abstract: No abstract text available
Text: ,m— • Infineon te c h n o lo g ie s Hall Sensor KSY 44 Version 2.0 Features • • • • • • • • • High sensitivity High operating temperature Small linearity error Low offset voltage Low TC of sensitivity Specified TC of offset voltage Low inductive zero component
|
OCR Scan
|
PDF
|
Q501343
KSY44
Q1343T4
|
Untitled
Abstract: No abstract text available
Text: SIEMENS Hall Sensor KSY 44 Preliminary Data Features • • • • • • • • • High sensitivity High operating temperature Small linearity error Low offset voltage Low TC of sensitivity Specified TC of offset voltage Low inductive zero component
|
OCR Scan
|
PDF
|
GPX06851
Q62705-K265rent
535b05
KSY44
E35LD5
|
