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Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: ChenYang Technologies GmbH & Co. KG CYSJ302C GaAs HALL-EFFECT ELEMENTS CYSJ302C series Hall-effect element is a ion-implanted magnetic field sensor made of monocrystal gallium arsenide GaAs semiconductor material group III-V using ion-implanted technology.	Original	PDF	CYSJ302C THS119, KSY14 KSY44 D-85464

Catalog Datasheet

MFG & Type

PDF

Document Tags

Untitled

Abstract: No abstract text available
Text: ChenYang Technologies GmbH & Co. KG CYSJ302C GaAs HALL-EFFECT ELEMENTS CYSJ302C series Hall-effect element is a ion-implanted magnetic field sensor made of monocrystal gallium arsenide GaAs semiconductor material group III-V using ion-implanted technology.

Original

PDF

CYSJ302C THS119, KSY14 KSY44 D-85464