Untitled
Abstract: No abstract text available
Text: ChenYang Technologies GmbH & Co. KG CYSJ362A GaAs HALL-EFFECT ELEMENTS CYSJ362A series Hall-effect element is a ion-implanted magnetic field sensor made of monocrystal gallium arsenide GaAs semiconductor material group III-V using ion-implanted technology.
|
Original
|
PDF
|
CYSJ362A
THS119,
KSY14
KSY44
D-85464
|
Untitled
Abstract: No abstract text available
Text: ChenYang Technologies GmbH & Co. KG CYSJ362A GaAs HALL-EFFECT ELEMENTS CYSJ362A series Hall-effect element is a ion-implanted magnetic field sensor made of monocrystal gallium arsenide GaAs semiconductor material group III-V using ion-implanted technology.
|
Original
|
PDF
|
CYSJ362A
THS119,
KSY14
KSY44
D-85464
|
CYSJ362A
Abstract: No abstract text available
Text: ChenYang Technologies GmbH & Co. KG CYSJ362A GaAs HALL-EFFECT ELEMENTS CYSJ362A series Hall-effect element is a ion-implanted magnetic field sensor made of monocrystal gallium arsenide GaAs semiconductor material group III-V using ion-implanted technology.
|
Original
|
PDF
|
CYSJ362A
THS119,
KSY14
KSY44
D-85464
|
Untitled
Abstract: No abstract text available
Text: ChenYang Technologies GmbH & Co. KG CYSJ362A GaAs HALL-EFFECT ELEMENTS CYSJ362A series Hall-effect element is a ion-implanted magnetic field sensor made of monocrystal gallium arsenide GaAs semiconductor material group III-V using ion-implanted technology.
|
Original
|
PDF
|
CYSJ362A
THS119,
KSY14
KSY44
D-85464
|