KSY14 Search Results

KSY14 Datasheets (5)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
KSY14		Infineon Technologies	Hall Effect Sensor, Ion-Implanted Generator		Original	PDF
KSY14		Infineon Technologies	Hall Sensor		Original	PDF
KSY14		Siemens	Hall Sensor		Original	PDF
KSY14		Siemens	Hall Sensor		Original	PDF
KSY14		Siemens	Hall Sensor		Scan	PDF

KSY14 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Hall sensors Siemens Abstract: KSY14 TESLA KSY14 Gold detector magnetic sensor circuit 4 pin hall sensor hall sensor sot143 hall sensor sot-143 siemens magnetic sensors ksy14 siemens magnetic sensors KSY14, Infineon Text: KSY14 – the Ultra-flat, Versatile Hall Sensor Reprint∗ from Siemens Components XXV 1990 . No.5. Page 167 to 172 Author: Martha Wolfrum Hall sensors are semiconductors that are sensitive to a magnetic field and can produce voltages in the presence of constant or varying magnetic fields. The new	Original	KSY14 KSY14 Hall11, B159-H6376-X-X-7600 Hall sensors Siemens KSY14 TESLA Gold detector magnetic sensor circuit 4 pin hall sensor hall sensor sot143 hall sensor sot-143 siemens magnetic sensors ksy14 siemens magnetic sensors KSY14, Infineon	PDF
Untitled Abstract: No abstract text available Text: ChenYang Technologies GmbH & Co. KG CYSJ362A GaAs HALL-EFFECT ELEMENTS CYSJ362A series Hall-effect element is a ion-implanted magnetic field sensor made of monocrystal gallium arsenide GaAs semiconductor material group III-V using ion-implanted technology.	Original	CYSJ362A THS119, KSY14 KSY44 D-85464	PDF
Untitled Abstract: No abstract text available Text: ChenYang Technologies GmbH & Co. KG CYSJ362A GaAs HALL-EFFECT ELEMENTS CYSJ362A series Hall-effect element is a ion-implanted magnetic field sensor made of monocrystal gallium arsenide GaAs semiconductor material group III-V using ion-implanted technology.	Original	CYSJ362A THS119, KSY14 KSY44 D-85464	PDF
magnetic transducer interface Abstract: KSY14 TESLA KSY14 Hall amplifier Wheatstone Bridge amplifier hall magnetic field sensor circuit schematic effec hall hall current transducer hall effect sensor magnetic transducers Text: Hall-Effect Magnetic Transducer Interface February 2001 Circuit Solution Many applications rely on the ability to sense the polarity and magnitude of a magnetic field. One of the most common technologies used for magnetic field measurement is based on the Hall effect. Hall-effect sensors are most	Original	1-800-LATTICE magnetic transducer interface KSY14 TESLA KSY14 Hall amplifier Wheatstone Bridge amplifier hall magnetic field sensor circuit schematic effec hall hall current transducer hall effect sensor magnetic transducers	PDF
CYSJ362A Abstract: No abstract text available Text: ChenYang Technologies GmbH & Co. KG CYSJ362A GaAs HALL-EFFECT ELEMENTS CYSJ362A series Hall-effect element is a ion-implanted magnetic field sensor made of monocrystal gallium arsenide GaAs semiconductor material group III-V using ion-implanted technology.	Original	CYSJ362A THS119, KSY14 KSY44 D-85464	PDF
Untitled Abstract: No abstract text available Text: ChenYang Technologies GmbH & Co. KG CYSJ362A GaAs HALL-EFFECT ELEMENTS CYSJ362A series Hall-effect element is a ion-implanted magnetic field sensor made of monocrystal gallium arsenide GaAs semiconductor material group III-V using ion-implanted technology.	Original	CYSJ362A THS119, KSY14 KSY44 D-85464	PDF
Untitled Abstract: No abstract text available Text: ChenYang Technologies GmbH & Co. KG CYSJ302A GaAs HALL-EFFECT ELEMENTS CYSJ302A series Hall-effect element is a ion-implanted magnetic field sensor made of monocrystal gallium arsenide GaAs semiconductor material group III-V using ion-implanted technology.	Original	CYSJ302A THS119, KSY14 KSY44 D-85464	PDF
Untitled Abstract: No abstract text available Text: ChenYang Technologies GmbH & Co. KG CYSJ302C GaAs HALL-EFFECT ELEMENTS CYSJ302C series Hall-effect element is a ion-implanted magnetic field sensor made of monocrystal gallium arsenide GaAs semiconductor material group III-V using ion-implanted technology.	Original	CYSJ302C THS119, KSY14 KSY44 D-85464	PDF
Untitled Abstract: No abstract text available Text: ,•— Infineon - technologies KSY14 Hall Sensor Version 2.0 Features • • • • • • • • • High sensitivity High operating temperature Small linearity error Low offset voltage Low TC of sensitivity and internal resistance Ultra-flat plastic miniature	OCR Scan	KSY14 0235bQ5 5S35b05	PDF
siemens magnetic sensors ksy14 Abstract: B143-H6358-G1-X-7400 IC 7400 7400 ic 7400 B115-H6563-X-X-7600 7400+integrated Text: S IE M EN S Literaturhinweise Information on Literature Literaturhinweise Information on Literature Auszug aus unserem Literaturverzeichnis 10.94 Exerpt to our Literature Guide 10.94 Bestell-Nr.: B192-H6763-G1-X-7400 Ordering No.: B192-H6763-G1-X-7400 Titel	OCR Scan	B192-H6763-G1-X-7400 H38-S2021 G3876 siemens magnetic sensors ksy14 B143-H6358-G1-X-7400 IC 7400 7400 ic 7400 B115-H6563-X-X-7600 7400+integrated	PDF
78o5 Abstract: KSY44 KTY 20-5 25L90 KPY 4 KTY 23-5 KTY 11-6 KSY63 BH-705 KTY13-51 Text: Halbleiter-Sensoren Semiconductor Sensors Silizium-Temperatur-Sensoren Silicon Temperature Sensors T yp B a s ic R é s is ta n c e 2 5 °C ^rnax ( 2 5 “O T h e rm a l tim e c o n s ta n t 0 - 6 3 % T yp e il mA in still a ir KTY 102> KTY 10-5 KTY 10-6	OCR Scan		PDF
Q62902-B146 Abstract: gh 312 SBV 604 Q65312-L100-U KSY13 SBV613 Q65310-L100-U75 BH7014 Text: Halbleiter-Sensoren Semiconductor Sensors Feldplatten-Potentiometer ohne Verstärker Typ Type FP 312 L 100 MR Potentiometer Without Amplifier Hot Jt Vout %H n Grad/deg Ft % Ta °C Ordering Code Bild Fig. 8 850 40 75 2.5 - 2 5 . +70 Q65312-L100-U 9 Feldplatten-Potentiometer mit Verstärker	OCR Scan	Q65312-L100-U Q65310-L100-U30 Q65310-L100-U75 Q62902-B146 Q62705-K38 Q62705-K109 Q62705-K227 Q62705-K265 Q68000-A8763-F261 Fig18 Q62902-B146 gh 312 SBV 604 KSY13 SBV613 Q65310-L100-U75 BH7014	PDF
kty 10-9 Abstract: KTY 10-8 KSY10 FP 310 L 100-75 KSY44 KSY13 FP 210-D-250-22 254 kpy 1 KPY 4 KSY14 Text: Semiconductor Sensors Halbleiter-Sensoren Outline Drawings ¡n mm Maßbilder (in mm) FP 412 L 100 FP 412 D 250 Figure 2 FP 210 D 250-22 FP 210 L 100-22 Figure 1 Section A - A ^ P u n c h in g —points (0 .4 3 ) (» 0 . 8 ) 1 1 0. 0 4 0.1 1 3 .5 * J E S M c ]	OCR Scan	GPD05637 kty 10-9 KTY 10-8 KSY10 FP 310 L 100-75 KSY44 KSY13 FP 210-D-250-22 254 kpy 1 KPY 4 KSY14	PDF
5 pin package hall sensor Abstract: 4 pin hall sensor 137 hall SENSOR Hall Siemens LOB MARKING CODE hall marking 135 175 hall sensor 4 pin package hall sensor MINIATURE CIRCUIT BREAKER siemens "4 pin" hall sensor Text: SIEM EN S Hall Sensor K S Y 14 Features • • « • • • • • • High sensitivity High operating temperature Small linearity error Low offset voltage Low TC of sensitivity and internal resistance Ultra-flat plastic miniature package Low inductive zero component	OCR Scan	KSY14 0HSG2204 aS3Sb05 00fl2fl43 5 pin package hall sensor 4 pin hall sensor 137 hall SENSOR Hall Siemens LOB MARKING CODE hall marking 135 175 hall sensor 4 pin package hall sensor MINIATURE CIRCUIT BREAKER siemens "4 pin" hall sensor	PDF

SFH 255 FA Abstract: LR 2703 LY3360K dl340m FP310L100-75 Q68000-A8452 Text: AlphanumerischesTypenverzeichnis Alphanumeric Type Index Achtung: NeueTypenbezeichnungen bei Si-Fotodetektoren und Lichtwellenleitern Attention: New type designations for Si-Photodetectors and Fiber-Optic Systems type Bestellnummer Seite Type Bestellnummer Seite	OCR Scan	068000-A5018 Q68000-A5017 Q68000-A5707 Q62703-N26 Q62703-N51 Q62703-N52 Q68000-A7302 Q68000-A7303 Q68000-A7304 Q68000-A8086 SFH 255 FA LR 2703 LY3360K dl340m FP310L100-75 Q68000-A8452	PDF