KRC410V
Abstract: KRC411V KRC412V KRC413V KRC414V
Text: SEMICONDUCTOR KRC410V~KRC414V TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES B With Built-in Bias Resistors. Simplify Circuit Design. G A D 2 Reduce a Quantity of Parts and Manufacturing Process.
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KRC410V
KRC414V
KRC413V
KRC411V
KRC412V
KRC413V
KRC414V
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KRC410E
Abstract: No abstract text available
Text: SEMICONDUCTOR KRC410E~KRC414E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES 2008. 11. 20 Revision No : 2 1/4
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KRC410E
KRC414E
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KRC410E~KRC414E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES B ・With Built-in Bias Resistors. ・Simplify Circuit Design. D G A 2 C 3 1 H ・Reduce a Quantity of Parts and Manufacturing Process.
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KRC410E
KRC414E
KRC413E
KRC413E
KRC414E
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KRC410E
Abstract: KRC412E KRC413E KRC414E KRC411E NPN bias ESM
Text: SEMICONDUCTOR KRC410E~KRC414E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES B With Built-in Bias Resistors. Simplify Circuit Design. D G A 2 C 3 1 H Reduce a Quantity of Parts and Manufacturing Process.
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KRC410E
KRC414E
KRC413E
KRC412E
KRC413E
KRC414E
KRC411E
NPN bias ESM
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KRC410
Abstract: KRC411 KRC412 KRC413 KRC414
Text: SEMICONDUCTOR KRC410~KRC414 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES M B M ᴌWith Built-in Bias Resistors. ᴌSimplify Circuit Design. D 3 1 G ᴌReduce a Quantity of Parts and Manufacturing Process.
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KRC410
KRC414
KRC413
KRC411
KRC412
KRC413
KRC414
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KRC410, 411, 414 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES B M M ・With Built-in Bias Resistors. ・Simplify Circuit Design. D J A 2 G ・Reduce a Quantity of Parts and Manufacturing Process.
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KRC410,
KRC414
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KRC410E~KRC414E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E B FEATURES ・With Built-in Bias Resistors. D 2 DIM A B C D G H A ・Simplify Circuit Design. ・Reduce a Quantity of Parts and Manufacturing Process.
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KRC410E
KRC414E
KRC413E
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KRC410~KRC414 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES M B M ・With Built-in Bias Resistors. ・Simplify Circuit Design. D J A 2 G ・Reduce a Quantity of Parts and Manufacturing Process.
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KRC410
KRC414
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KRC410
Abstract: No abstract text available
Text: SEMICONDUCTOR KRC410 MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 NK 1 2 Item Marking Description Device Mark NK KRC410 hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method
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KRC410
KRC410
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KRC410E
Abstract: marking nk KEC NK
Text: SEMICONDUCTOR KRC410E MARKING SPECIFICATION ESM PACKAGE 1. Marking method Laser Marking 2. Marking NK No. Item Marking 1 Device Mark NK KRC410E 2 hFE Grade - - 00.09.01 Revision No : 00 Description 1/1
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KRC410E
KRC410E
marking nk
KEC NK
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KRC410E
Abstract: KRC411E KRC412E KRC413E KRC414E NPN bias ESM
Text: SEMICONDUCTOR KRC410E~KRC414E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES B ᴌWith Built-in Bias Resistors. ᴌSimplify Circuit Design. D G A 2 C 3 1 H ᴌReduce a Quantity of Parts and Manufacturing Process.
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KRC410E
KRC414E
KRC410E
KRC411E
KRC413E
KRC411E
KRC412E
KRC413E
KRC414E
NPN bias ESM
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KRC410, 411, 414 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES 2008. 10. 30 Revision No : 4 1/4
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KRC410,
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KRC411E
Abstract: KRC410E KRC412E KRC413E KRC414E NPN bias ESM
Text: SEMICONDUCTOR KRC410E~KRC414E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES B With Built-in Bias Resistors. Simplify Circuit Design. D G A 2 C H Reduce a Quantity of Parts and Manufacturing Process.
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KRC410E
KRC414E
KRC413E
KRC411E
KRC412E
KRC413E
KRC414E
NPN bias ESM
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KRC410V
Abstract: KRC411V KRC412V KRC413V KRC414V
Text: SEMICONDUCTOR KRC410V~KRC414V TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES B With Built-in Bias Resistors. Simplify Circuit Design. G A D 2 Reduce a Quantity of Parts and Manufacturing Process.
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KRC410V
KRC414V
KRC413V
KRC411V
KRC412V
KRC413V
KRC414V
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TRANSISTOR MARKING NK
Abstract: KRC410V KRC412V KRC411V KRC413V KRC414V
Text: SEMICONDUCTOR KRC410V~KRC414V TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES B ᴌWith Built-in Bias Resistors. ᴌSimplify Circuit Design. G A D 2 ᴌReduce a Quantity of Parts and Manufacturing Process.
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KRC410V
KRC414V
KRC410V
KRC411V
KRC413V
TRANSISTOR MARKING NK
KRC412V
KRC411V
KRC413V
KRC414V
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KRC410
Abstract: KRC411 KRC412 KRC413 KRC414
Text: SEMICONDUCTOR KRC410~KRC414 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES M B M ・With Built-in Bias Resistors. ・Simplify Circuit Design. D 3 1 G ・Reduce a Quantity of Parts and Manufacturing Process.
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KRC410
KRC414
KRC413
KRC411
KRC412
KRC413
KRC414
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alternator diode 1776 B
Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)
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Hig86-755-3679515
alternator diode 1776 B
2az marking transistor sot-23
SMD SOT23 transistor MARK Y2
ic mb4213
NEC 12F triac
F10P048
ktc3114 equivalent
SMD TRANSISTOR MARKING 02N
DIODE PJ 57 ss14
BC517 equivalent
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khb*9D5N20P
Abstract: khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor
Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC
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2N2904E
BC859
KDS135S
2N2906E
BC860
KAC3301QN
KDS160
2N3904
BCV71
KDB2151E
khb*9D5N20P
khb9d0n90n
6v Zener diode
khb*2D0N60P
transistor
KHB7D0N65F
BC557 transistor
kia*278R33PI
KHB9D0N90N circuit
ktd998 transistor
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STF12A80
Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
Text: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer
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02CZ10
02CZ11
02CZ12
02CZ13
02CZ15
02CZ16
02CZ18
02CZ2
02CZ20
STF12A80
BSTC1026
BSTD1046
BTB04-600SAP
STF6A80
BSTD1040
TO510DH
BSTC1040
TO812NJ
BTB15-700B
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LM8550
Abstract: KTD2026 2SC2320 equivalent NEC 12F DATASHEET 2N3904 MOTOROLA 2sc2240 equivalent 2N3906 MOTOROLA 2sc1983 2N5400 MOTOROLA 2SD1960
Text: Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC 2N2222/A Motorola KTN2222/A 2SA1150 Toshiba KTA1272 2SA1510 Sanyo KRA1 10S 2SB546A NEC KTB 1369 2N2369/A Motorola KTN2369/A 2SA1151 NEC KTA1266 2SA1511 Sanyo KRA1 10M 2SB560 Sanyo
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2N2222/A
KTN2222/A
2SA1150
KTA1272
2SA1510
2SB546A
2N2369/A
KTN2369/A
2SA1151
KTA1266
LM8550
KTD2026
2SC2320 equivalent
NEC 12F DATASHEET
2N3904 MOTOROLA
2sc2240 equivalent
2N3906 MOTOROLA
2sc1983
2N5400 MOTOROLA
2SD1960
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KIA78*pI
Abstract: transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P
Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode KEC 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC
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2N2904E
BC859
KDS135S
2N2906E
BC860
KAC3301QN
KDS160
2N3904
BCV71
KDB2151E
KIA78*pI
transistor
KIA78*p
TRANSISTOR 2N3904
khb*9D5N20P
khb9d0n90n
KID65004AF
TRANSISTOR mosfet
KIA7812API
khb*2D0N60P
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MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
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eB5 IC
Abstract: KRC411E KRC410E
Text: SEM ICONDUCTOR KRC410E-KRC414E TECHNI CAL DATA EPI TAXI AL PLANAR NPN TRA NS IST OR SW ITC H IN G A PPLICATION. INTERFA CE CIRCU IT A N D DRIVER CIRC U IT A PPLICATION. FEA T U RE S Î - r — • With Built-in Bias Resistors. • Simplify Circuit Design.
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KRC410E-KRC414E
KRC412E
eB5 IC
KRC411E
KRC410E
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KRC410
Abstract: KRC411 KRC412 KRC413 KRC414 TRANSISTOR MARKING NK
Text: KEC KRC410 — KRC414 SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES • • • • With Built-in Bias Resistors. Simplify Circuit Design.
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KRC410
KRC414
KRC410
KRC411
KRC412
KRC413
KRC410-KRC414
KRC414
TRANSISTOR MARKING NK
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