4CS1
Abstract: No abstract text available
Text: DRAM MODULE KMM366F80 8 4CS1 KMM366F80(8)4CS1 EDO Mode without buffer 8M x 64 DRAM DIMM Using 4Mx16, 8K & 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM366F80(8)4CS1 is a 8Mx64bits Dynamic RAM high density memory module. The Samsung KMM366F80(8)4CS1 consists of eight CMOS 4Mx16bits
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KMM366F80
4Mx16,
8Mx64bits
4Mx16bits
400mil
168-pin
4CS1
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM366F80 8 4BS1 KMM366F80(8)4BS1 EDO Mode without buffer 8M x 64 DRAM DIMM Using 4Mx16, 8K & 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM366F80(8)4BS1 is a 8Mx64bits Dynamic RAM high density memory module. The Samsung KMM366F80(8)4BS1 consists of eight CMOS 4Mx16bits
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KMM366F80
4Mx16,
8Mx64bits
4Mx16bits
400mil
168-pin
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM366F80 8 3CK2 KMM366F80(8)3CK2 EDO Mode without buffer 8M x 64 DRAM DIMM Using 8Mx8, 8K & 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM366F80(8)3CK2 is a 8Mx64bits Dynamic RAM high density memory module. The Samsung KMM366F80(8)3CK2 consists of eight CMOS 8Mx8bits
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KMM366F80
8Mx64bits
400mil
168-pin
KMM366F803CK2
KMM366F883CK2
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM366F80 8 3BK2 KMM366F80(8)3BK2 EDO Mode without buffer 8M x 64 DRAM DIMM Using 8Mx8, 8K & 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM366F80(8)3BK2 is a 8Mx64bits Dynamic RAM high density memory module. The Samsung KMM366F80(8)3BK2 consists of eight CMOS 8Mx8bits
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KMM366F80
8Mx64bits
400mil
168-pin
KMM366F803BK2
KMM366F883BK2
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Untitled
Abstract: No abstract text available
Text: KMM366F883AK KMM366F803AK DRAM1VI0DULE KMM366F883AK & KMM366F803AK EDO Mode without buffer 8Mx64 DRAM DIMM based on 8Mx8, 8K & 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM366FB8 0 3AK is a 8M bit x 64 Dynamic RAM high density memory module. The
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KMM366F883AK
KMM366F803AK
KMM366F803AK
8Mx64
KMM366FB8
KMM366F88
400mil
168-pin
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KM48V8004AK
Abstract: No abstract text available
Text: KMM366F883AK KMM366F803AK DRAM1VI0DULE KMM366F883AK & KMM366F803AK EDO Mode without buffer 8Mx64 DRAM DIMM based on 8Mx8, 8K & 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM366F88 0 3AK is a 8M bit x 64 Dynamic RAM high density memory module. The
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KMM366F883AK
KMM366F803AK
8Mx64
KMM366F88
400mil
168-pin
KMM366F883AK
KMM366F803AK
KM48V8004AK
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KM M 3 6 6 F 8 0 8 4 B S1 Unbuffered 8Mx64 DIMM (4Mx16 base) Revision 0.0 Dec. 1997 L££T R t»ü £S DRAM MODULE KM M 3 6 6 F 8 0 ( 8 ) 4 B S1 Re v is io n H is to ry Version 0.0 (Dec. 1997) • Removed two AC parameters t cacp (access time from CAS) and tAAP (access time from col. addr.) in AC C H A R A C T E R I S T I C S .
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8Mx64
4Mx16
KMM366F80
KMM366F884BS1
416V4004BS
KMM366F804BS1
-KM41
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM366F80 8 3BK2 KMM366F80(8)3BK2EDO Mode without buffer 8M x 64 DRAM DIMM Using 8Mx8, 8K & 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES T he S am su ng K M M 3 6 6 F 8 0 (8 )3 B K 2 is a 8 M x6 4b its D ynam ic RAM high de n sity m em o ry m odule.
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KMM366F80
168-pin
200Max
08Max)
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1004CL
Abstract: 44V16 366F 44C40 372V3280 2100B-7 M5368 KMM5368103B 44v16100 dram module kmm 2mx32
Text: FUNCTION GUIDE 1. INTRODUCTION DRAM Module I. Single In-Line M em ory M odule SIMM l-i. Fast Page ( FP ) Mode 5 V [T6M~Based j- f — ftM x 3 g "KMM5321200BW/BWG-6 H ~KM M 5321200BW/BWG-' -|lM x 3 6 [2MX32 KMM5322100BKU/BKUG-5 K —[2Mx36 H H | KMM5322100BKÜ/BKÛ g ^K 1<M M 5322-| OOBKU/BKUG3-7
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KMM5321200BW/BWG-6
5321200BW/BWG-'
KMM5361203BW/8
KMM5322200BW/BWG-6
KMM5322100BKU/BKUG-5
MM5361203BW/BWG-7
KMM5322200BW/BWG-7
2MX32
KMM5322100BK
2Mx36
1004CL
44V16
366F
44C40
372V3280
2100B-7
M5368
KMM5368103B
44v16100
dram module kmm 2mx32
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KMM366F213BK6
Abstract: KMM364E124BJ6 KMM366F213BK-6 KMM374F410BK6 83AK KMM366F410BK6 KMM374F400BK6 KMM366F400BK6 124BT-L7 KMM364C12
Text: MEMORY ICs FUNCTION GUIDE 1. INTRODUCTION DRAM Module I. Single In-Line Memory Module SIMM l-l. Fast Page ( FP ) Mode ;16MBased 2Mx36 4Mx32 4Mx3fi 8Mx32 8Mx3C 64MBased>- KMM5321200BW/BWG-6.Tf KMM5321200BW/BWGKMM5361203BW/BWG-6 KMM5361203BW/BWG-7 KMM5322200BW/BWG-6 KMM5322200BW/BWG-7
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2Mx36
4Mx32
8Mx32
KMM374F4l
KMM374F410BK-6
8Mx64
MM366F883AK-5_
KMM366F883AK-6
KMM366F803AK-5
KMM374F
KMM366F213BK6
KMM364E124BJ6
KMM366F213BK-6
KMM374F410BK6
83AK
KMM366F410BK6
KMM374F400BK6
KMM366F400BK6
124BT-L7
KMM364C12
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1MX16
Abstract: KMM5324104BK KMM5321200B
Text: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE DRAM Module Org. Part No. Feature 4 Byte Single In-Line Memory Module 5 V 1Mx32 1Mx36 2Mx32 4Mx36 8Mx32 8Mx36 1— -— — r ÍF P .S G , PPD 1Mx16, SOJ 60/70 750 1024/16 r ~ m o w KMM5321200BW/BWG
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1Mx32
KMM5321200AW/AWG
KMM5321200BW/BWG
KMM5321204AW/AWG
KMM5321204BW/BWG
1Mx36
M15361203A
1Mx16,
1Mx16
16Mx4,
1MX16
KMM5324104BK
KMM5321200B
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dram module
Abstract: No abstract text available
Text: DRAM MODULE KMM 366F80 8 3BK3 8Mx64 Unbuffered DIMM (8Mx8 base) Revision 0.0 Nov. 1997 -1 - Rev. 0.0 ( Nov. 19 97) DRAM MODULE KMM 366F80(8)3BK3 Re v i s i o n H is to ry Ve rs i on 0 . 0 (N ov . 1 997 ) • Changed PCB for signal integrity. • Changed Module Part No. from KMM366F80(8)3BK to KMM366F80(8)3BK3 caused by PCB revision .
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366F80
8Mx64
KMM366F80
8Mx64bits
dram module
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