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    Untitled

    Abstract: No abstract text available
    Text: Preliminary KMM364E124B J DRAM MODULE KMM364E124BJ Fast Page with EDO Mode 1Mx64 DRAM DIMM based on 1Mx16, 1K Refresh, 5V G ENER AL DESCRIPTION FEATURES • Part Identification - KMM364E124BJ 1024 cycles/16ms, SOJ The Samsung KMM364E124BJ is a 1M bit x 64


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    PDF KMM364E124B KMM364E124BJ 1Mx64 1Mx16, KMM364E124BJ cycles/16ms, 1Mx16bit 42-pin

    KMM364E124B

    Abstract: dg7-1
    Text: Preliminary KMM364E124B J DRAM MODULE KMM364E124BJ Fast Page with EDO Mode 1Mx64 DRAM DIMM based on 1Mx16, 1K Refresh, 5V G EN ERA L DESCRIPTIO N FEATURES The Samsung KMM364E124BJ is a 1M bit x 64 D ynam ic RAM high density m em ory module. The • Part Identification


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    PDF KMM364E124BJ 1Mx64 1Mx16, 3S4E124BJ x16bit 42-pin 48pin 168-pin 364E124BJ KMM364E124B dg7-1

    1004CL

    Abstract: 44V16 366F 44C40 372V3280 2100B-7 M5368 KMM5368103B 44v16100 dram module kmm 2mx32
    Text: FUNCTION GUIDE 1. INTRODUCTION DRAM Module I. Single In-Line M em ory M odule SIMM l-i. Fast Page ( FP ) Mode 5 V [T6M~Based j- f — ftM x 3 g "KMM5321200BW/BWG-6 H ~KM M 5321200BW/BWG-&#39; -|lM x 3 6 [2MX32 KMM5322100BKU/BKUG-5 K —[2Mx36 H H | KMM5322100BKÜ/BKÛ g ^K 1<M M 5322-| OOBKU/BKUG3-7


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    PDF KMM5321200BW/BWG-6 5321200BW/BWG-' KMM5361203BW/8 KMM5322200BW/BWG-6 KMM5322100BKU/BKUG-5 MM5361203BW/BWG-7 KMM5322200BW/BWG-7 2MX32 KMM5322100BK 2Mx36 1004CL 44V16 366F 44C40 372V3280 2100B-7 M5368 KMM5368103B 44v16100 dram module kmm 2mx32

    KMM366F213BK6

    Abstract: KMM364E124BJ6 KMM366F213BK-6 KMM374F410BK6 83AK KMM366F410BK6 KMM374F400BK6 KMM366F400BK6 124BT-L7 KMM364C12
    Text: MEMORY ICs FUNCTION GUIDE 1. INTRODUCTION DRAM Module I. Single In-Line Memory Module SIMM l-l. Fast Page ( FP ) Mode ;16MBased 2Mx36 4Mx32 4Mx3fi 8Mx32 8Mx3C 64MBased>- KMM5321200BW/BWG-6.Tf KMM5321200BW/BWGKMM5361203BW/BWG-6 KMM5361203BW/BWG-7 KMM5322200BW/BWG-6 KMM5322200BW/BWG-7


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    PDF 2Mx36 4Mx32 8Mx32 KMM374F4l KMM374F410BK-6 8Mx64 MM366F883AK-5_ KMM366F883AK-6 KMM366F803AK-5 KMM374F KMM366F213BK6 KMM364E124BJ6 KMM366F213BK-6 KMM374F410BK6 83AK KMM366F410BK6 KMM374F400BK6 KMM366F400BK6 124BT-L7 KMM364C12

    1MX16

    Abstract: KMM5324104BK KMM5321200B
    Text: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE DRAM Module Org. Part No. Feature 4 Byte Single In-Line Memory Module 5 V 1Mx32 1Mx36 2Mx32 4Mx36 8Mx32 8Mx36 1— -— — r ÍF P .S G , PPD 1Mx16, SOJ 60/70 750 1024/16 r ~ m o w KMM5321200BW/BWG


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    PDF 1Mx32 KMM5321200AW/AWG KMM5321200BW/BWG KMM5321204AW/AWG KMM5321204BW/BWG 1Mx36 M15361203A 1Mx16, 1Mx16 16Mx4, 1MX16 KMM5324104BK KMM5321200B

    KMM364C12

    Abstract: KMM53616000AK KMM5322100BK 2MX32 1MX16
    Text: TABLE OF CONTENTS I. FUNCTION GUIDE 1. Intro d u ctio n . DRAM Module- 13 13 DRAM for


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