Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    KMM374S403CT Search Results

    SF Impression Pixel

    KMM374S403CT Price and Stock

    Samsung Semiconductor KMM374S403CT-GL

    MEMORY MODULE,SDRAM,4MX72,CMOS,DIMM,168PIN,PLASTIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components KMM374S403CT-GL 35
    • 1 $40.612
    • 10 $40.612
    • 100 $37.488
    • 1000 $37.488
    • 10000 $37.488
    		Buy Now

    KMM374S403CT Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KMM374S403CT Samsung Electronics PC100 SDRAM MODULE Original PDF
    KMM374S403CT-G8 Samsung Electronics 4M x 72 SDRAM DIMM with ECC based on 2M x 8, 4K Refresh, 3.3V Synchronous DRAM with SPD Original PDF
    KMM374S403CT-GH Samsung Electronics 4M x 72 SDRAM DIMM with ECC based on 2M x 8, 4K Refresh, 3.3V Synchronous DRAM with SPD Original PDF
    KMM374S403CT-GL Samsung Electronics 4M x 72 SDRAM DIMM with ECC based on 2M x 8, 4K Refresh, 3.3V Synchronous DRAM with SPD Original PDF
    KMM374S403CTL-G0 Samsung Electronics 4M x 72 SDRAM DIMM with ECC based on 2M x 8, 4K Refresh, 3.3V Synchronous DRAM with SPD Original PDF
    KMM374S403CTS-G8 Samsung Electronics 4M x 64 SDRAM DIMM based on 2M x 8, 4K Refresh, 3.3V Synchronous DRAM with SPD Original PDF
    KMM374S403CTS-GH Samsung Electronics 4M x 64 SDRAM DIMM based on 2M x 8, 4K Refresh, 3.3V Synchronous DRAM with SPD Original PDF
    KMM374S403CTS-GL Samsung Electronics 4M x 64 SDRAM DIMM based on 2M x 8, 4K Refresh, 3.3V Synchronous DRAM with SPD Original PDF

    KMM374S403CT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    KMM374S403CTS-G8

    Abstract: KMM374S403CTS-GH KMM374S403CTS-GL km48s2020ct
    Text: PC100 Unbuffered DIMM KMM374S403CTS KMM374S403CTS SDRAM DIMM 4Mx64 SDRAM DIMM based on 2Mx8, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM374S403CTS is a 4M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


    Original     		PDF PC100 KMM374S403CTS KMM374S403CTS 4Mx64 400mil 168-pin KMM374S403CTS-G8 KMM374S403CTS-GH KMM374S403CTS-GL km48s2020ct

    km48s2020ct

    Abstract: KMM374S403CTL-G0 KM48S2020
    Text: KMM374S403CTL PC66 SDRAM MODULE Revision History Revision .3 Mar. 1998 •Some Parameter values & Characteristics of comp. level are changed as below : - Input leakage currents (Inputs) : ±5uA to ±1uA. - Input leakage currents (I/O) : ±5uA to ±1.5uA.


    Original     		PDF KMM374S403CTL 200mV. KMM374S403CTL 4Mx72 100Min 540Min) 150Max 81Max) km48s2020ct KMM374S403CTL-G0 KM48S2020

    KMM374S403CT

    Abstract: KMM374S403CT-G8 KMM374S403CT-GH KMM374S403CT-GL km48s2020ct bdl 39
    Text: KMM374S403CT PC100 SDRAM MODULE Revision History Revision .0 Feb. 1998 - Input leakage Currents (Inputs / DQ) of Component level are changed. I IL(Inputs) : ± 5uA to ± 1uA, I IL(DQ) : ± 5uA to ± 1.5uA. - Cin to be measured at V DD = 3.3V, T A = 23°C, f = 1MHz, V REF =1.4V ± 200 mV.


    Original     		PDF KMM374S403CT PC100 KMM374S403CT 4Mx72 Syn450 100Min 540Min) KMM374S403CT-G8 KMM374S403CT-GH KMM374S403CT-GL km48s2020ct bdl 39

    KM48S2020CT-G10

    Abstract: KMM374S403CTL-G0
    Text: KMM374S403CTL PC66 SDRAM MODULE Revision History Revision .3 Mar. 1998 •Some Parameter values & Characteristics of comp. level are changed as below : - Input leakage currents (Inputs) : ±5uA to ±1uA. - Input leakage currents (I/O) : ±5uA to ±1.5uA.


    Original     		PDF KMM374S403CTL 200mV. KMM374S403CTL 4Mx72 66MHz KM48S2020CT-G10 KMM374S403CTL-G0

    KM48S2020CT G10

    Abstract: KMM374S403CT KMM374S403CT-G8 KMM374S403CT-GH KMM374S403CT-GL
    Text: KMM374S403CT PC100 SDRAM MODULE Revision History Revision .0 Feb. 1998 - Input leakage Currents (Inputs / DQ) of Component level are changed. I IL(Inputs) : ± 5uA to ± 1uA, I IL(DQ) : ± 5uA to ± 1.5uA. - Cin to be measured at V DD = 3.3V, T A = 23°C, f = 1MHz, V REF =1.4V ± 200 mV.


    Original     		PDF KMM374S403CT PC100 KMM374S403CT 4Mx72 100MHz KM48S2020CT G10 KMM374S403CT-G8 KMM374S403CT-GH KMM374S403CT-GL

    Untitled

    Abstract: No abstract text available
    Text: KMM374S403CTL PC66 SDR AM M O D U L E Revision History Revision .3 Mar. 1998 •Some Parameter values & Characteristics of comp, level are changed as below : -Input leakage currents (Inputs) : ±5uA to ±1uA. -Input leakage currents (I/O ): ±5uA to ±1.5uA.


    OCR Scan     		PDF KMM374S403CTL 200mV. 4Mx72 KMM374S4and 150Max 250Max) KM48S2020CT

    Untitled

    Abstract: No abstract text available
    Text: KMM374S403CT PC100 SDRAM MODULE Revision History Revision .0 Feb. 1998 - Input leakage Currents (Inputs / DQ) of Com ponent level are changed. In(lnputs) : ± 5uA to ± 1 u A , - Cin to be measured at V dd I il (DQ) : ± 5uA to ± 1.5uA. = 3.3V, T a = 23°C, f = 1 MHz, V


    OCR Scan     		PDF KMM374S403CT PC100 KMM374S403CT 4Mx72 150Max KM48S2020CT

    Untitled

    Abstract: No abstract text available
    Text: KMM374S403CTL PC66 SDRAM MODULE Revision History Revision .3 Mar. 1998 •S om e Parameter values & Characteristics of comp, level are changed as below : - Input leakage currents (Inputs) : +5uA to ±1 uA. - Input leakage currents (I/O) : + 5 u A to ± 1 .5uA.


    OCR Scan     		PDF KMM374S403CTL 200mV. KMM374S403CTL 4Mx72 150Max 250Max) KM48S2020CT

    Untitled

    Abstract: No abstract text available
    Text: KMM374S403CT PC100 SDRAM MODULE KMM374S403CT SDRAM DIMM 4Mx72 SDRAM DIMM with ECC based on 2Mx8, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM374S403CT is a 4M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF KMM374S403CT KMM374S403CT PC100 4Mx72 400mil 168-pin

    Untitled

    Abstract: No abstract text available
    Text: KMM374S403CTL PC66 SDRAM MODULE KMM374S403CTL SDRAM DIMM 4Mx72 SDRAM DIMM with ECC based on 2Mx8, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM374S403CTL is a 4M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF KMM374S403CTL KMM374S403CTL 4Mx72 400mil 168-pin 000DIA

    Untitled

    Abstract: No abstract text available
    Text: KMM374S403CT PC100 SDR AM M O D U L E Re vis ion Hist ory Revision .0 Feb. 1998 -Input leakage Currents (Inputs / DQ) of Component level are changed. llL(lnputs) : ± 5uA to ± 1uA, llL(DQ) : ± 5uA to ± 1.5uA. -C in to be measured at V DD = 3.3V, T a = 23°C, f = 1MHz, V


    OCR Scan     		PDF KMM374S403CT PC100 4Mx72 KMM374S403CT 150Max KM48S2020CT

    KMM366S424BTL-G0

    Abstract: KMM466S824BT2F0 KMM466S424BT-F0 KMM466S824BT2-F0 4MX16 16MX8 KM44S4020CT KM48S2020CT
    Text: TABLE OF CONTENTS | I. General Information A. Product Guide Component B. Product Guide (Module) C. Ordering information II. Component Specifications A. 16M SDRAM (C-die) - Datasheets • KM44S4020CT • 4Mx4 with 2Banks 25 • KM48S2020CT .


    OCR Scan     		PDF KM44S4020CT KM48S2020CT KM416S1020CT KM416S1021CT 1Mx16 KM44S16020BT KM48S8020BT KM416S4020BT ------------------------------------16Mx4 4Mx64 KMM366S424BTL-G0 KMM466S824BT2F0 KMM466S424BT-F0 KMM466S824BT2-F0 4MX16 16MX8 KM44S4020CT KM48S2020CT