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    KM23V4000D Search Results

    KM23V4000D Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM23V4000D Samsung Electronics 4M-Bit (512K x 8) CMOS MASK ROM Original PDF
    KM23V4000DETG Samsung Electronics 4M-Bit (512K x 8) CMOS MASK ROM Original PDF
    KM23V4000DETY Samsung Electronics 4M-Bit (512K x 8) CMOS MASK ROM Original PDF
    KM23V4000DG Samsung Electronics 4M-Bit (512K x 8) CMOS MASK ROM Original PDF
    KM23V4000DTG Samsung Electronics 4M-Bit (512K x 8) CMOS MASK ROM Original PDF
    KM23V4000DTY Samsung Electronics 4M-Bit (512K x 8) CMOS MASK ROM Original PDF

    KM23V4000D Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    KM23V4000D

    Abstract: No abstract text available
    Text: KM23V4000D E TG CMOS MASK ROM 4M-Bit (512Kx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 524,288 x 8 bit organization • Fast access time(C L=30pF) 3.3V Operation : 85ns(Max.) 3.0V Operation : 95ns(Max.) • Supply voltage KM23V4000D(E)TG : single +3.0V/ single +3.3V


    Original     		PDF KM23V4000D 512Kx8) 32-sTSOP1-0813 331MAX 047MAX

    KM23V4000DETG

    Abstract: KM23V4000D KM23V4000DTG
    Text: KM23V4000D E TG CMOS MASK ROM 4M-Bit (512Kx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 524,288 x 8 bit organization • Fast access time(C L=30pF) 3.3V Operation : 85ns(Max.) 3.0V Operation : 95ns(Max.) • Supply voltage KM23V4000D(E)TG : single +3.0V/ single +3.3V


    Original     		PDF KM23V4000D 512Kx8) 32-sTSOP1-0813 331MAX 047MAX KM23V4000DETG KM23V4000DTG

    Q721

    Abstract: KM23V4000D KM23V4000DG
    Text: KM23V4000D G CMOS MASK ROM 4M-Bit (512Kx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 524,288 x 8 bit organization The KM23V4000D(G) is a fully static mask programmable ROM organized 524,288 x 8 bit. It is fabricated using silicon gate CMOS process technology.


    Original     		PDF KM23V4000D 512Kx8) 32-DIP KM23C4000DG 32-SOP. 32-SOP-525 118MAX 822MAX Q721 KM23V4000DG

    KM23S4000DTY

    Abstract: KM23V4000D KM23V4000DETY KM23V4000DTY
    Text: KM23V4000D E TY/KM23S4000D(E)TY CMOS MASK ROM 4M-Bit (512Kx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 524,288 x 8 bit organization • Fast access time 3.3V Operation : 100ns(Max.) 3.0V Operation : 120ns(Max.) 2.5V Operation : 250ns(Max.) • Supply voltage


    Original     		PDF KM23V4000D TY/KM23S4000D 512Kx8) 100ns 120ns 250ns KM23S4000D KM23V 4000D KM23S4000DTY KM23V4000DETY KM23V4000DTY

    KM23S4000DTY

    Abstract: KM23V4000D KM23V4000DETY KM23V4000DTY
    Text: KM23V4000D E TY/KM23S4000D(E)TY CMOS MASK ROM 4M-Bit (512Kx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 524,288 x 8 bit organization • Fast access time 3.3V Operation : 100ns(Max.) 3.0V Operation : 120ns(Max.) 2.5V Operation : 250ns(Max.) • Supply voltage


    Original     		PDF KM23V4000D TY/KM23S4000D 512Kx8) 100ns 120ns 250ns KM23S4000D KM23V 4000D KM23S4000DTY KM23V4000DETY KM23V4000DTY

    KM23V4000D

    Abstract: KM23V4000DG
    Text: KM23V4000D G CMOS MASK ROM 4M-Bit (512Kx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 524,288 x 8 bit organization The KM23V4000D(G) is a fully static mask programmable ROM organized 524,288 x 8 bit. It is fabricated using silicon gate CMOS process technology.


    Original     		PDF KM23V4000D 512Kx8) 32-DIP KM23V4000DG 32-SOP. 32-SOP-525

    KM23S4000DTY

    Abstract: KM23V4000D KM23V4000DETY KM23V4000DTY
    Text: KM23V4000D E TY/KM23S4000D(E)TY CMOS MASK ROM 4M-Bit (512Kx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 524,288 x 8 bit organization • Fast access time 3.3V Operation : 100ns(Max.) 3.0V Operation : 120ns(Max.) 2.5V Operation : 250ns(Max.) • Supply voltage


    Original     		PDF KM23V4000D TY/KM23S4000D 512Kx8) 100ns 120ns 250ns KM23S4000D KM23V 4000D KM23S4000DTY KM23V4000DETY KM23V4000DTY

    23v4000

    Abstract: M5EV
    Text: KM23V4000D £ TY7KM23S4000D(E)TY CMOS MASK ROM 4M-Bit (512Kx8) CMOS MASK ROM FEATURES G E N ER A L DESCRIPTION • 524,288 x 8 bit organization • Fast access time 3.3V O peration: 100ns(Max.) 3.0V O peration: 120ns(Max.) 2.5V O peration: 250n$(Max.) • Supply voltage


    OCR Scan     		PDF KM23V4000D( TY7KM23S4000D 512Kx8) 100ns 120ns KM23V4000D KM23S4Q00D 4000D 32-TSOP1-0820 23V4000D 23v4000 M5EV

    Untitled

    Abstract: No abstract text available
    Text: KM23V4000D E TY/KM23S4000D(E)TY CMOS MASK ROM 4M-Bit (512Kx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 524,288 x 8 bit organization • Fast access time 3.3V Operation : 100ns(M ax.) 3.0V Operation : 120ns(Max.) 2.5V Operation : 250ns(M ax.) • Supply voltage


    OCR Scan     		PDF KM23V4000D TY/KM23S4000D 512Kx8) 100ns 120ns 250ns 23V4000D 23S4000D 4000D 32-TSQ

    Untitled

    Abstract: No abstract text available
    Text: KM23V4000D G CMOS MASK ROM 4M-Bit (512Kx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 524,283 x 8 bit organization • Fast access time 3.3V O peration: 1Q0ns(Max.) 3.0V O peration: 120ns(Max.) • Supply voltag e: single +3.0V/ single +3.3V • Current consumption


    OCR Scan     		PDF KM23V4000D 512Kx8) 120ns 23V40000 32-DIP-600 KM23V4000DG 32-SOP-525 KM23V40QQD

    Untitled

    Abstract: No abstract text available
    Text: KM23V4000D E TY/KM23S4000D(E)TY CMOS MASK ROM 4M-Bit (512Kx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 524,288 x 8 bit organization • Fast access time 3.3V Operation : 100ns(M ax.) 3.0V Operation : 120ns(M ax.) 2.5V Operation : 250ns(M ax.) • Supply voltage


    OCR Scan     		PDF KM23V4000D TY/KM23S4000D 512Kx8) 100ns 120ns 250ns 23V4000D 23S4000D 4000D 32-TSQ

    23V4000DG

    Abstract: No abstract text available
    Text: KM23V4000D G CMOS MASK ROM 4M-Bit (512Kx8) CMOS MASK ROM GENERAL DESCRIPTION FEATURES • 524,288 x 8 bit organization • Fast access time 3.3V Operation : 100ns(Max.) 3.0V Operation : 120ns(Max.) • Supply voltage : single +3.0V/ single +3.3V • C urrent consumption


    OCR Scan     		PDF KM23V4000D 512Kx8) 100ns 120ns 23V4000D 32-DIP-600 23V4000DG 32-SOP-525 23V4000DG

    Untitled

    Abstract: No abstract text available
    Text: KM23V4000D G CMOS MASK ROM 4M-Bit (512Kx8) CMOS MASK ROM GENERAL DESCRIPTION FEATURES • 524,288 x 8 bit organization • Fast access time 3.3V Operation : 100ns(M ax.) 3.0V Operation : 120ns(M ax.) • Supply voltage : single +3.0V/ single +3.3V • Current consumption


    OCR Scan     		PDF KM23V4000D 512Kx8) 100ns 120ns 23V4000D 32-DIP-600 23V4000DG 32-SOP-525 23V4000D

    Untitled

    Abstract: No abstract text available
    Text: KM23V4000D G CMOS MASK ROM 4M-Bit (512Kx8) CMOS MASK ROM GENERAL DESCRIPTION FEATURES • 524,288 x 8 bit organization • Fast access time 3.3V Operation : 100ns(Max.) 3.0V Operation : 120ns(Max.) • Supply voltage : single +3.0V/ single +3.3V • Current consumption


    OCR Scan     		PDF KM23V4000D 512Kx8) 100ns 120ns KM23V4000D 32-DIP-600 KM23V4000DG 32-SOP-525 100pF

    48TSOP1

    Abstract: MX* 64M-Bit eprom TY15 km23c32000cg-10 23v322 KM23C16205BSG-10 7Y12
    Text: MEMORY ICs 1. FUNCTION GUIDE INTRODUCTION 4M bit \ KM23C400QD G -8 512KX8 [- 1 KM23C4QOOD(G)-10 KM23C40QQD(E)TY-8 \ |— KM23C4Q00D(G)-12 ]- 1 KM23C4Q00D(E)'TY-10 |- 1 KM23C4000D(E)7Y-12 — [ KM23V4000D(E)TY-10 |- 1 KM23V4000D{E)TY-12 |-j KM23V4000D(E)TY-15


    OCR Scan     		PDF 512KX8 KM23C400QD KM23C4QOOD KM23C4Q00D KM23C40QQD TY-10 KM23C4000D 7Y-12 KM23V4000D 48TSOP1 MX* 64M-Bit eprom TY15 km23c32000cg-10 23v322 KM23C16205BSG-10 7Y12

    Untitled

    Abstract: No abstract text available
    Text: TABLE OF CONTENTS I. FUNCTION GUIDE 1. Introduction . 11 2. Product Guide . 14 3. Ordering Information . 16


    OCR Scan     		PDF KM23C4000D KM23C4100D KM23C41 KM23V64000T. KM23V64005AG KM23V64005ATY. KM23V64205ASG KM23SV32205T