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    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS IN C h?E D • 7^4142 KM23C4001H G D O lb ^ TQ2 CMOS MASK ROM 4M-Bit (512Kx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C4001H is a fu lly s ta tic m ask program m able ROM organized 5 2 4 ,2 8 8 x8 bit. It is fabricated using


    OCR Scan     		PDF KM23C4001H 512Kx8) 100ns 32-pin, 600mil, KM23C4001 0D17G02 KM23C4001H)

    NSI150

    Abstract: No abstract text available
    Text: KM23C4001H CMOS MASK ROM 4M-BH 512Kx 8 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C4001H is a fully static mask programmable ROM organized 524,288x8 bit. It is fabricated using silicon-gate CMOS process technology. 524,288 x 8 bit organization


    OCR Scan     		PDF KM23C4001H 512Kx KM23C4001H 288x8 100ns 32-pin, 600mil, KM23C4001H) NSI150

    Untitled

    Abstract: No abstract text available
    Text: KM23C4001H G CMOS MASK ROM 4M-Bit (512KX8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • 524,288 x 8 bit organization Fast access time: 100ns (max.) Supply voltage: single + 5V Current consumption T h e K M 2 3C 4 0 01 H is a fu lly s ta tic m a s k p ro g ra m m a b le


    OCR Scan     		PDF KM23C4001H 512KX8) 100ns KM23C4001H) KM23C4001HG)

    Untitled

    Abstract: No abstract text available
    Text: CMOS MASK ROM KM23C4001H 4M-Bit 512Kx 8 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C4001H is a fu lly s ta tic m ask program m able ROM organized 5 2 4 ,2 8 8 x8 bit It is fabricated using silicon -gate CMOS process tech nolog y 524,288 x 8 bit organization


    OCR Scan     		PDF KM23C4001H 512Kx 100ns 32-pin, 600mil, KM23C4001H KM23C4001H) KM23C4001HG)

    41C464

    Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
    Text: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page


    OCR Scan     		PDF 41C256 41C257 41C258 41C464 41C466 41C1000 41C1002 44C256 44C258 41C4000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100

    K93C46

    Abstract: 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256
    Text: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 256K X 1 F. P a g e KM 41C 256 TC 51256 X 1 X 4 4M X 1 X 4 , 1 6M To sh iba M od e X 4 1M Sam su ng Org. H ita ch i Fu jitsu HM 51256 M B81256 NEC /iP D 4 1 2 5 6 N ib b le KM 41C 257


    OCR Scan     		PDF 416C256 14800A 14900A 514170B 514280B KM23C16000G KM23C16100G KM23C16000FP KM23C16100FP HN624017FB K93C46 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256

    TC55B8128

    Abstract: KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256
    Text: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 2 56 K 1M Org. x1 Toshiba F Page T C 51256 N ib b le K M 4 1C 2 5 7 T C 51257 H ita ch i H M 51 2 5 6 — F u jitsu M B 8 12 5 6 M B 8 12 5 7 NEC /P D 41256 — Oki M S M 5 1C 2 5 6


    OCR Scan     		PDF TC511001 TC514101 514170B 514280B TC5316200P KM2X16100 KM23C16000G KM23C16100G KM23C16000FP KM23C16100FP TC55B8128 KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256

    KM424C256Z

    Abstract: KM41C464 PB20 KM64258 KM68512 KMM5362000 KM23C2 64k 30-pin SIMM KM23C4000A KM41C4000BJ
    Text: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM Capacity 256K bit Part Number KM41C256P KM41C255J KM41C258Z KM41C257P KM41C257J KM41C257Z KM41C25BP KM41C258J KM41C258Z Features Packages Remark 256K X 1 256K X 1 256K X 1 256K X 1 70/80/100 70/80/100


    OCR Scan     		PDF KM41C256P KM41C255J KM41C258Z KM41C257P KM41C257J KM41C257Z KM41C25BP KM41C258J KM41C464P KM424C256Z KM41C464 PB20 KM64258 KM68512 KMM5362000 KM23C2 64k 30-pin SIMM KM23C4000A KM41C4000BJ

    KMM591000AN

    Abstract: KM41C464P KM424C256Z KMM591000B KM41C464 KMM584000B 4Mx1 nibble
    Text: MEMORY ICS FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM Capacity 256K bit Part Number KM41C256P 256K X 1 KM41C256J 256K X 1 KM41C256Z KM41C257P 256K X 1 256Kx 1 70/80/100 KM41C257J 256K X 1 256K X 1 Packages Remark CMOS Fast Page 16 Pin DIP Fast Page 18 Pin PLCC


    OCR Scan     		PDF KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J KM41C257Z KM41C258P KM41C258J KM41C258Z KM41C464P KMM591000AN KM424C256Z KMM591000B KM41C464 KMM584000B 4Mx1 nibble