9d0n50f
Abstract: KHB9D0N50F2 9D0N50 KHB9D0N50F khb 9d0n50f
Text: SEMICONDUCTOR KHB9D0N50F2 MARKING SPECIFICATION TO-220IS PACKAGE 1. Marking method Laser Marking 2. Marking 1 KHB 9D0N50F 2 No. 2007. 5. 23 713 2 Item Marking Description Device Name KHB9D0N50F2 KHB9D0N50F2 Lot No. 713 Revision No : 0 7 Year 0~9 : 2000~2009
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KHB9D0N50F2
O-220IS
9D0N50F
9d0n50f
KHB9D0N50F2
9D0N50
KHB9D0N50F
khb 9d0n50f
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KHB9D0N50F1
Abstract: ID9AJ KHB9D0N50F2 KHB9D0N50P1 KHB9D0N50F
Text: SEMICONDUCTOR KHB9D0N50P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB9D0N50P1 A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and
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KHB9D0N50P1/F1/F2
KHB9D0N50P1
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Fig17.
KHB9D0N50F1
ID9AJ
KHB9D0N50F2
KHB9D0N50P1
KHB9D0N50F
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KHB9D0N50F1
Abstract: KHB9D0N50P1 36 W ballast KHB9D0N50F
Text: SEMICONDUCTOR KHB9D0N50P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB9D0N50P1 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and
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KHB9D0N50P1/F1/F2
KHB9D0N50P1
KHB9D0N50P1
dI/dt200A/,
KHB9D0N50F1
36 W ballast
KHB9D0N50F
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MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
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KHB9D0N50F1
Abstract: TJ-108 kq9n50p
Text: SEMICONDUCTOR KQ9N50P/F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description TENTATIVE This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and
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KQ9N50P/F
KQ9N50P
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Fig16.
Fig17.
KHB9D0N50F1
TJ-108
kq9n50p
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