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    K4M51163LC Search Results

    K4M51163LC Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    K4M51163LC Samsung Electronics 8M x 16-Bit x 4 Banks Mobile SDRAM in 54FBGA Original PDF
    K4M51163LC-BN75 Samsung Electronics 8M x 16-Bit x 4 Banks Mobile SDRAM in 54FBGA Original PDF
    K4M51163LC-RG75 Samsung Electronics 8M x 16-Bit x 4 Banks Mobile SDRAM in 54FBGA Original PDF
    K4M51163LC-RN75 Samsung Electronics 8M x 16-Bit x 4 Banks Mobile SDRAM in 54FBGA Original PDF

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    K4M51163LC

    Abstract: No abstract text available
    Text: K4M51163LC - R B N/G/L/F Mobile SDRAM 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES GENERAL DESCRIPTION • VDD/VDDQ = 2.5V/2.5V The K4M51163LC is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the


    Original     		PDF K4M51163LC 16Bit 54FBGA