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    IXTP2N100P Search Results

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    IXTP2N100P Price and Stock

    Littelfuse Inc IXTP2N100P

    MOSFET N-CH 1000V 2A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTP2N100P Tube 136 1
    • 1 $2.36
    • 10 $2.36
    • 100 $1.605
    • 1000 $1.56982
    • 10000 $1.56982
    		Buy Now

    IXYS Corporation IXTP2N100P

    MOSFET 2 Amps 1000V 7.5 Rds
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXTP2N100P 143
    • 1 $3.39
    • 10 $3.23
    • 100 $2.3
    • 1000 $1.64
    • 10000 $1.58
    		Buy Now
    TTI IXTP2N100P Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.58
    • 10000 $1.58
    		Buy Now
    TME IXTP2N100P 1
    • 1 $2.78
    • 10 $2.2
    • 100 $1.99
    • 1000 $1.99
    • 10000 $1.99
    		Get Quote
    New Advantage Corporation IXTP2N100P 1,566 1
    • 1 -
    • 10 -
    • 100 $3.98
    • 1000 $3.98
    • 10000 $3.72
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    IXTP2N100P Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IXTP2N100P IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 2A TO-220 Original PDF

    IXTP2N100P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Polar VHVTM Power MOSFET IXTA2N100P IXTP2N100P IXTY2N100P VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 1000V = 2.0A ≤ Ω 7.5Ω TO-263 (IXTA) Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXTA2N100P IXTP2N100P IXTY2N100P O-263 2N100P

    IXTP2N100P

    Abstract: 2N100P IXTA2N100P IXTP2N100
    Text: PolarTM Power MOSFET IXTA2N100P IXTP2N100P IXTY2N100P VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 1000V = 2.0A ≤ 7.5Ω Ω TO-263 (IXTA) Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXTA2N100P IXTP2N100P IXTY2N100P O-263 2N100P 4-03-08-A IXTP2N100P 2N100P IXTA2N100P IXTP2N100

    Untitled

    Abstract: No abstract text available
    Text: PolarTM Power MOSFET IXTA2N100P IXTP2N100P IXTY2N100P VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 1000V = 2.0A Ω ≤ 7.5Ω TO-263 (IXTA) Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXTA2N100P IXTP2N100P IXTY2N100P O-263 2N100P 4-03-08-A

    IXTD08N100P-1A

    Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
    Text: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types


    Original     		PDF