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    IRFU214 Search Results

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    IRFU214 Price and Stock

    Vishay Siliconix IRFU214PBF

    MOSFET N-CH 250V 2.2A TO251AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFU214PBF Tube 3,155 1
    • 1 $0.94
    • 10 $0.94
    • 100 $0.75253
    • 1000 $0.50552
    • 10000 $0.5
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    Bristol Electronics IRFU214PBF 750
    • 1 -
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    Quest Components IRFU214PBF 600
    • 1 $2.432
    • 10 $2.432
    • 100 $2.432
    • 1000 $1.0032
    • 10000 $1.0032
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    Vishay Siliconix IRFU214

    MOSFET N-CH 250V 2.2A TO251AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFU214 Tube
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    onsemi IRFU214BTU_FP001

    MOSFET N-CH 250V 2.2A IPAK
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    DigiKey IRFU214BTU_FP001 Tube
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    Vishay Intertechnologies IRFU214PBF

    MOSFET N-CHANNEL 250V - Tape and Reel (Alt: IRFU214PBF)
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    Avnet Americas IRFU214PBF Reel 12 Weeks 3,000
    • 1 -
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    • 10000 $0.664
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    Mouser Electronics IRFU214PBF 3,090
    • 1 $0.94
    • 10 $0.753
    • 100 $0.597
    • 1000 $0.5
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    TTI IRFU214PBF Tube 3,000
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    • 10000 $0.5
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    TME IRFU214PBF 1
    • 1 $0.798
    • 10 $0.508
    • 100 $0.457
    • 1000 $0.363
    • 10000 $0.326
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    New Advantage Corporation IRFU214PBF 525 1
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    • 1000 $0.4177
    • 10000 $0.4177
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    HARRIS/99 IRFU214

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics IRFU214 1,776
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    Find more IRFU214 price and stock on Findchips.com

    IRFU214 Datasheets (20)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IRFU214 International Rectifier Power MOSFET Original PDF
    IRFU214 Intersil 2.2A, 250V, 2.000 ?, N-Channel Power MOSFETs Original PDF
    IRFU214 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRFU214 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 250V 2.2A I-PAK Original PDF
    IRFU214 International Rectifier HEXFET Power Mosfet Scan PDF
    IRFU214 International Rectifier Plastic Package HEXFETs Scan PDF
    IRFU214 International Rectifier HEXFET Power MOSFETs Scan PDF
    IRFU214 International Rectifier HEXFET Power MOSFET Scan PDF
    IRFU214 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFU214 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFU214A Fairchild Semiconductor Advanced Power MOSFET Original PDF
    IRFU214A Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRFU214A Fairchild Semiconductor Advanced Power MOSFET Scan PDF
    IRFU214B Fairchild Semiconductor 250V N-Channel MOSFET Original PDF
    IRFU214B Fairchild Semiconductor 250V N-Channel MOSFET Original PDF
    IRFU214BTU Fairchild Semiconductor 250V N-Channel B-FET / Substitute of IRFU214 & IRFU214A Original PDF
    IRFU214BTU_FP001 Fairchild Semiconductor 250V N-Channel B-FET / Substitute of IRFU214 & IRFU214A Original PDF
    IRFU214PBF International Rectifier HEXFET Power MOSFET Original PDF
    IRFU214PBF Vishay Semiconductors MOSFET N-CH 250V 2.2A I-PAK Original PDF
    IRFU214PBF Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 250V 2.2A I-PAK Original PDF

    IRFU214 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRFR214B

    Abstract: IRFU214B
    Text: IRFR214B / IRFU214B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF IRFR214B IRFU214B IRFU214B

    irfu9210

    Abstract: irfu214 IRFR214 SiHFR214 SiHFR214-E3 SiHFU214
    Text: IRFR214, IRFU214, SiHFR214, SiHFU214 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) (Ω) VGS = 10 V 2.0 Available • Repetitive Avalanche Rated Qg (Max.) (nC) 8.2 • Surface Mount (IRFR9210/SiHFR9210)


    Original     		PDF IRFR214, IRFU214, SiHFR214 SiHFU214 IRFR9210/SiHFR9210) IRFU9210/SiHFU9210) O-252) O-251) 18-Jul-08 irfu9210 irfu214 IRFR214 SiHFR214-E3

    irfu9210

    Abstract: IRFR214 IRFU214 SiHFR214 SiHFR214-E3
    Text: IRFR214, IRFU214, SiHFR214, SiHFU214 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) (Ω) VGS = 10 V 2.0 Available • Repetitive Avalanche Rated Qg (Max.) (nC) 8.2 • Surface Mount (IRFR9210/SiHFR9210)


    Original     		PDF IRFR214, IRFU214, SiHFR214 SiHFU214 IRFR9210/SiHFR9210) IRFU9210/SiHFU9210) O-252) O-251) 18-Jul-08 irfu9210 IRFR214 IRFU214 SiHFR214-E3

    irfr214

    Abstract: No abstract text available
    Text: IRFR214, IRFU214, SiHFR214, SiHFU214 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) (Ω) VGS = 10 V 2.0 Available • Repetitive Avalanche Rated Qg (Max.) (nC) 8.2 • Surface Mount (IRFR9210/SiHFR9210)


    Original     		PDF IRFR214, IRFU214, SiHFR214 SiHFU214 IRFR9210/SiHFR9210) IRFU9210/SiHFU9210) O-252) O-251) 12-Mar-07 irfr214

    Untitled

    Abstract: No abstract text available
    Text: PD- 95384 IRFR214PbF IRFU214PbF • Lead-Free www.irf.com 1 06/07/04 IRFR/U214PbF 2 www.irf.com IRFR/U214PbF www.irf.com 3 IRFR/U214PbF 4 www.irf.com IRFR/U214PbF www.irf.com 5 IRFR/U214PbF 6 www.irf.com IRFR/U214PbF www.irf.com 7 IRFR/U214PbF D-Pak TO-252AA Package Outline


    Original     		PDF IRFR214PbF IRFU214PbF IRFR/U214PbF O-252AA)

    Untitled

    Abstract: No abstract text available
    Text: IRFR214, IRFU214, SiHFR214, SiHFU214 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 250 RDS(on) (Ω) VGS = 10 V 2.0 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single D DPAK (TO-252) DESCRIPTION IPAK (TO-251) D D G G • Halogen-free According to IEC 61249-2-21


    Original     		PDF IRFR214, IRFU214, SiHFR214 SiHFU214 IRFR9210, SiHFR9210 IRFU9210, SiHFU9210 2002/95/EC O-252)

    Untitled

    Abstract: No abstract text available
    Text: IRFR214, IRFU214, SiHFR214, SiHFU214 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 250 RDS(on) (Ω) VGS = 10 V 2.0 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single D DPAK (TO-252) DESCRIPTION IPAK (TO-251) D D G G • Halogen-free According to IEC 61249-2-21


    Original     		PDF IRFR214, IRFU214, SiHFR214 SiHFU214 IRFR9210, SiHFR9210 IRFU9210, SiHFU9210 2002/95/EC O-252)

    Untitled

    Abstract: No abstract text available
    Text: IRFR214B / IRFU214B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF IRFR214B IRFU214B

    Untitled

    Abstract: No abstract text available
    Text: IRFR214B / IRFU214B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF IRFR214B IRFU214B O-251 IRFU214B IRFU214BTU FP001

    Untitled

    Abstract: No abstract text available
    Text: IRFR214, IRFU214, SiHFR214, SiHFU214 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 250 RDS(on) () VGS = 10 V 2.0 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single D DPAK (TO-252)


    Original     		PDF IRFR214, IRFU214, SiHFR214 SiHFU214 O-252) O-251)

    irfu214

    Abstract: IRFR214 TB334
    Text: IRFR214, IRFU214 Data Sheet 2.2A, 250V, 2.000 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. They are


    Original     		PDF IRFR214, IRFU214 TA17443. irfu214 IRFR214 TB334

    U120

    Abstract: EIA-541 IRFR120 IRFU120
    Text: PD- 95384A IRFR214PbF IRFU214PbF • Lead-Free Document Number: 91269 12/3/04 www.vishay.com 1 IRFR/U214PbF Document Number: 91269 www.vishay.com 2 IRFR/U214PbF Document Number: 91269 www.vishay.com 3 IRFR/U214PbF Document Number: 91269 www.vishay.com 4 IRFR/U214PbF


    Original     		PDF 5384A IRFR214PbF IRFU214PbF IRFR/U214PbF U120 EIA-541 IRFR120 IRFU120

    IRFR214

    Abstract: IRFU214 TB334
    Text: IRFR214, IRFU214 Data Sheet 2.2A, 250V, 2.000 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. They are


    Original     		PDF IRFR214, IRFU214 TA17443. 250Vf IRFR214 IRFU214 TB334

    Untitled

    Abstract: No abstract text available
    Text: PD- 95384A IRFR214PbF IRFU214PbF • Lead-Free Document Number: 91269 12/3/04 www.vishay.com 1 IRFR/U214PbF Document Number: 91269 www.vishay.com 2 IRFR/U214PbF Document Number: 91269 www.vishay.com 3 IRFR/U214PbF Document Number: 91269 www.vishay.com 4 IRFR/U214PbF


    Original     		PDF 5384A IRFR214PbF IRFU214PbF IRFR/U214PbF

    Untitled

    Abstract: No abstract text available
    Text: IRFR214, IRFU214, SiHFR214, SiHFU214 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 250 RDS(on) () VGS = 10 V 2.0 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single D DPAK (TO-252)


    Original     		PDF IRFR214, IRFU214, SiHFR214 SiHFU214 O-252) O-251) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    EIA-541

    Abstract: IRFR120 IRFU120 U120
    Text: PD- 95384A IRFR214PbF IRFU214PbF • Lead-Free www.irf.com 1 12/3/04 IRFR/U214PbF 2 www.irf.com IRFR/U214PbF www.irf.com 3 IRFR/U214PbF 4 www.irf.com IRFR/U214PbF www.irf.com 5 IRFR/U214PbF 6 www.irf.com IRFR/U214PbF www.irf.com 7 IRFR/U214PbF D-Pak TO-252AA Package Outline


    Original     		PDF 5384A IRFR214PbF IRFU214PbF IRFR/U214PbF EIA-541 IRFR120 IRFU120 U120

    Untitled

    Abstract: No abstract text available
    Text: IRFR214, IRFU214, SiHFR214, SiHFU214 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 250 RDS(on) (Ω) VGS = 10 V 2.0 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single D DPAK (TO-252) DESCRIPTION IPAK (TO-251) D D G G • Halogen-free According to IEC 61249-2-21


    Original     		PDF IRFR214, IRFU214, SiHFR214 SiHFU214 IRFR9210, SiHFR9210 IRFU9210, SiHFU9210 2002/95/EC O-252)

    Untitled

    Abstract: No abstract text available
    Text: IRFR214, IRFU214, SiHFR214, SiHFU214 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 250 RDS(on) () VGS = 10 V 2.0 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single D DPAK (TO-252)


    Original     		PDF IRFR214, IRFU214, SiHFR214 SiHFU214 O-252) O-251)

    IRFR214

    Abstract: IRFR9210 IRFU214 IRFU9210 SiHFR214 SiHFR214-E3 SiHFR9210
    Text: IRFR214, IRFU214, SiHFR214, SiHFU214 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 250 RDS(on) (Ω) VGS = 10 V 2.0 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single D DPAK (TO-252) DESCRIPTION IPAK (TO-251) D D G G • Halogen-free According to IEC 61249-2-21


    Original     		PDF IRFR214, IRFU214, SiHFR214 SiHFU214 O-252) O-251) IRFR9210, SiHFR9210 IRFU9210, SiHFU9210 IRFR214 IRFR9210 IRFU214 IRFU9210 SiHFR214-E3

    1RFR214

    Abstract: 25C2 AN-994 IRFR214 IRFU214
    Text: International S Rectifier PD-9.703A IRFR214 IRFU214 HEXFET P o w e r M O S F E T Dynamic dv/dt Rating Repetitive Avalanche Rated Surface Mount IRFR214 Straight Lead (IRFU214) Available in Tape & Reel Fast Switching Ease of Paralleling V dss - 250V R DS(on) - 2 0 ß


    OCR Scan     		PDF IRFR214 IRFR214) IRFU214) i50Kn lntGIT13tà 1RFR214 25C2 AN-994 IRFR214 IRFU214

    TO-251AA

    Abstract: ipak
    Text: International H EXFET Power MOSFETs H^IRectìfier I-Pak I-Pak TO-251A A N-Channel Part Number IRFU014 IRFU024 IRFU110 IRFU120 IRFU210 IRFU220 IRFU214 IRFU224 IRFU310 IRFU320 IRFU420 IRFUC20 V(BR)DSS Drain-to-Source R DS(on) I q Continuous Breakdown On-State Drain Current


    OCR Scan     		PDF O-251A IRFU014 IRFU024 IRFU110 IRFU120 IRFU210 IRFU220 IRFU214 IRFU224 IRFU310 TO-251AA ipak

    Untitled

    Abstract: No abstract text available
    Text: IRFR214, IRFU214 S e m iconductor Data Sheet 2.2A, 250V, 2.000 Ohm, N-Channel Power MOSFETs These are N-Channel enhancem ent mode silicon gate power field effect transistors designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. They are


    OCR Scan     		PDF IRFR214, IRFU214

    4562 mosfet

    Abstract: 4563 mosfet
    Text: IRFR214 IRFU214 çm H A R R IS S E M I C O N D U C T O R N-Channel Power MOSFETs Avalanche Energy Rated M arch 1994 Package Features TO-251AA TOP VIEW • 2.2A, 250V • r DS on = 2 -0 £ î ’ SOURCE • Single Puise Avalanche Energy Rated DRAIN TAB • SOA Is Power-Disslpation Limited


    OCR Scan     		PDF IRFR214 IRFU214 O-251AA O-252AA IRFR214, IRFU214 4562 mosfet 4563 mosfet

    Untitled

    Abstract: No abstract text available
    Text: M655452 International IOR]Rectifier DDlSb70 352 • PD-9.703A IRFR214 IRFU214 HEXFET Power M O SFET • • • • • • • INR Dynamic dv/dt Rating Repetitive Avalanche Rated Surface Mount IRFR214 Straight Lead (IRFU214) Available in Tape & Reel Fast Switching


    OCR Scan     		PDF M655452 DDlSb70 IRFR214 IRFU214 IRFR214) IRFU214)