IRFS11N50ATRRP Search Results

IRFS11N50ATRRP Price and Stock

Filter by Manufacturer


Vishay Siliconix IRFS11N50ATRRP MOSFET N-CH 500V 11A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRFS11N50ATRRP	Cut Tape			1	1 $2.83 10 $2.375 100 $1.9216 1000 $1.9216 10000 $1.9216	Buy Now
	IRFS11N50ATRRP	Digi-Reel			1	1 $2.83 10 $2.375 100 $1.9216 1000 $1.9216 10000 $1.9216	Buy Now
	IRFS11N50ATRRP	Reel			800	1 - 10 - 100 - 1000 $1.41665 10000 $1.32125	Buy Now
Vishay Intertechnologies IRFS11N50ATRRP MOSFET N-CHANNEL 500V - Tape and Reel (Alt: IRFS11N50ATRRP)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	IRFS11N50ATRRP	Reel		13 Weeks	800	1 - 10 - 100 - 1000 $1.29747 10000 $1.29747	Buy Now
Future Electronics	IRFS11N50ATRRP				800	1 - 10 - 100 - 1000 $1.4 10000 $1.4	Buy Now
TTI	IRFS11N50ATRRP	Reel			800	1 - 10 - 100 - 1000 $1.43 10000 $1.32	Buy Now

IRFS11N50ATRRP Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Type	PDF
IRFS11N50ATRRP		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 11A D2PAK		Original	PDF

IRFS11N50ATRRP Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
IRFS11N50A Abstract: SiHFS11N50A SiHFS11N50A-E3 irfs11n50apbf Text: IRFS11N50A, SiHFS11N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 500 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.52 52 Qgs (nC) 13 Qgd (nC) 18 Configuration Single D D2PAK (TO-263) • Halogen-free According to IEC 61249-2-21 Definition	Original	PDF	IRFS11N50A, SiHFS11N50A O-263) 2002/95/EC 11-Mar-11 IRFS11N50A SiHFS11N50A-E3 irfs11n50apbf
Untitled Abstract: No abstract text available Text: IRFS11N50A, SiHFS11N50A www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Available Ruggedness • Fully Characterized Capacitance	Original	PDF	IRFS11N50A, SiHFS11N50A O-263) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
IRU1239SC Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK	Original	PDF	100MT160PAPBF 100MT160PA 100MT160PBPBF IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
IRFS11N50APBF Abstract: IRFS11N50A SiHFS11N50A SiHFS11N50A-E3 Text: IRFS11N50A, SiHFS11N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 0.52 Qg (Max.) (nC) 52 Qgs (nC) 13 Qgd (nC) 18 Configuration • Improved Gate, Avalanche and Dynamic dV/dt	Original	PDF	IRFS11N50A, SiHFS11N50A O-263) 18-Jul-08 IRFS11N50APBF IRFS11N50A SiHFS11N50A-E3
IRFS11N50A Abstract: SiHFS11N50A SiHFS11N50A-E3 irfs11n50apbf Text: IRFS11N50A, SiHFS11N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 0.52 Qg (Max.) (nC) 52 Qgs (nC) 13 Qgd (nC) 18 Configuration Available • Improved Gate, Avalanche and Dynamic dV/dt RoHS*	Original	PDF	IRFS11N50A, SiHFS11N50A O-263) 18-Jul-08 IRFS11N50A SiHFS11N50A-E3 irfs11n50apbf
Untitled Abstract: No abstract text available Text: IRFS11N50A, SiHFS11N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 500 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.52 52 Qgs (nC) 13 Qgd (nC) 18 Configuration Single D D2PAK (TO-263) • Halogen-free According to IEC 61249-2-21 Definition	Original	PDF	IRFS11N50A, SiHFS11N50A O-263) 2002/95/EC 11-Mar-11
S10 diode Abstract: No abstract text available Text: IRFS11N50A, SiHFS11N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 500 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.52 52 Qgs (nC) 13 Qgd (nC) 18 Configuration Single D D2PAK (TO-263) • Halogen-free According to IEC 61249-2-21 Definition	Original	PDF	IRFS11N50A, SiHFS11N50A O-263) 2002/95/EC 18-Jul-08 S10 diode
Untitled Abstract: No abstract text available Text: IRFS11N50A, SiHFS11N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 500 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.52 52 Qgs (nC) 13 Qgd (nC) 18 Configuration Single D D2PAK (TO-263) • Halogen-free According to IEC 61249-2-21 Definition	Original	PDF	IRFS11N50A, SiHFS11N50A O-263) 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
IRFS11N50APBF Abstract: No abstract text available Text: IRFS11N50A, SiHFS11N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 500 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.52 52 Qgs (nC) 13 Qgd (nC) 18 Configuration Single D D2PAK (TO-263) • Halogen-free According to IEC 61249-2-21 Definition	Original	PDF	IRFS11N50A, SiHFS11N50A O-263) 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRFS11N50APBF
Untitled Abstract: No abstract text available Text: IRFS11N50A, SiHFS11N50A www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Available Ruggedness • Fully Characterized Capacitance	Original	PDF	IRFS11N50A, SiHFS11N50A O-263) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
IRFS11N50APBF Abstract: No abstract text available Text: IRFS11N50A, SiHFS11N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 500 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.52 52 Qgs (nC) 13 Qgd (nC) 18 Configuration Single D D2PAK (TO-263) • Halogen-free According to IEC 61249-2-21 Definition	Original	PDF	IRFS11N50A, SiHFS11N50A O-263) 2002/95/EC 11-Mar-11 IRFS11N50APBF