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    Hitachi Ltd HM621400HJP-10

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    HM621400H Datasheets (27)

    Part ECAD Model Manufacturer Description Curated Type PDF
    HM621400H Hitachi Semiconductor 4M High Speed SRAM (4-Mword x 1-bit) Original PDF
    HM621400HC Hitachi Semiconductor 4M High Speed SRAM (4-Mword x 1-bit) Original PDF
    HM621400HCJP Hitachi Semiconductor High-Speed SRAMs Original PDF
    HM621400HCJP-10 Hitachi Semiconductor 4M High Speed SRAM (4-Mword x 1-bit) Original PDF
    HM621400HCJP-10 Renesas Technology 4M High Speed SRAM (4 MWord x 1 Bit) Original PDF
    HM621400HCJP-12 Renesas Technology 4M High Speed SRAM (4 MWord x 1 Bit) Original PDF
    HM621400HCJP/HCLJP Hitachi Semiconductor High-Speed SRAMs Original PDF
    HM621400HCJP-HCLJP Hitachi Semiconductor High-Speed SRAMs Original PDF
    HM621400HCLJP Hitachi Semiconductor High-Speed SRAMs Original PDF
    HM621400HCLJP-10 Hitachi Semiconductor 4M High Speed SRAM (4-Mword x 1-bit) Original PDF
    HM621400HCLJP-10 Renesas Technology 4M High Speed SRAM (4 MWord x 1 Bit) Original PDF
    HM621400HCLJP-12 Renesas Technology 4M High Speed SRAM (4 MWord x 1 Bit) Original PDF
    HM621400HC Series Renesas Technology 4M High Speed SRAM Original PDF
    HM621400HJP Hitachi Semiconductor High-Speed SRAMs Original PDF
    HM621400HJP-10 Hitachi Semiconductor 4M High Speed SRAM (4-Mword x 1-bit) Original PDF
    HM621400HJP-10 Renesas Technology 4M High Speed SRAM (4-Mword x 1-bit) Original PDF
    HM621400HJP-12 Hitachi Semiconductor 4M High Speed SRAM (4-Mword x 1-bit) Original PDF
    HM621400HJP-15 Hitachi Semiconductor 4M High Speed SRAM (4-Mword x 1-bit) Original PDF
    HM621400HJP-15 Renesas Technology 4M High Speed SRAM (4-Mword x 1-bit) Original PDF
    HM621400HJP/HLJP Hitachi Semiconductor High-Speed SRAMs Original PDF

    HM621400H Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HM621400HC

    Abstract: HM621400HCJP-10 HM621400HCLJP-10 Hitachi DSA00358
    Text: HM621400HC Series 4M High Speed SRAM 4-Mword x 1-bit ADE-203-1199 (Z) Preliminary Rev. 0.0 Nov. 30, 2000 Description The HM621400HC is a 4-Mbit high speed static RAM organized 4-Mword × 1-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell)and high speed circuit designing


    Original     		PDF HM621400HC ADE-203-1199 400-mil 32-pin HM621400HCJP-10 HM621400HCLJP-10 Hitachi DSA00358

    Untitled

    Abstract: No abstract text available
    Text: HM621400H Series 4M High Speed SRAM 4-Mword x 1-bit ADE-203-787B (Z) Preliminary Rev. 0.2 Dec. 5, 1997 Description The HM621400H is an asyncronous high speed static RAM organized as 4-Mword × 1-bit. It has realized high speed access time (10/12/15 ns) with employing 0.35 µm CMOS process (4-transistor + 2-poly resistor


    Original     		PDF HM621400H ADE-203-787B HM621400H 400-mil 32-pin

    Untitled

    Abstract: No abstract text available
    Text: HM621400HC Series Pin Arrangement 32-pin SOJ A0 A1 A2 A3 A4 A5 CS VCC VSS Din WE A6 A7 A8 A9 A10 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 A21 A20 A19 A18 A17 A16 OE VSS VCC Dout A15 A14 A13 A12 A11 NC Top view


    Original     		PDF HM621400HC 32-pin

    HM621400HC

    Abstract: HM621400HCJP-10 HM621400HCLJP-10 Hitachi DSA00190
    Text: HM621400HC シリーズ 4M High Speed SRAM 4-Mword x 1-bit ADJ-203-566 (Z) 暫定仕様 Rev. 0.0 ’00. 11. 30 概要 HM621400HC シリーズは 4M ワード×1 ビット構成の 4M ビット高速スタティック RAM です。CMOS（6 トランジスタメモリセル） プロセス技術を採用し，高密度，高性能，低消費電 力を実現しました。したが


    Original     		PDF HM621400HC ADJ-203-566 HM621400HCJP-10 HM621400HCLJP-10 400-mil 32-pin CP-32DB) HM621400HC HM621400HCJP-10 HM621400HCLJP-10 Hitachi DSA00190

    Z 263B

    Abstract: HM621400H HM621400HJP-10 HM621400HJP-12 HM621400HJP-15 HM621400HLJP-10 HM621400HLJP-12 HM621400HLJP-15 Hitachi DSA00189
    Text: HM621400H シリーズ 4M High Speed SRAM 4-Mword x 1-bit ADJ-203-263B (Z) ’98. 9. 15 Rev. 1.0 概要 HM6 21 40 0H シリーズは 4M ワード×1 ビット構成の 4M ビット高速スタティック RAM です。CMOS（4 トランジスタ+ 2 ポリレジスタメモリセル）プロセス技術を採用し，高密度，高性能，低消費電力を実現し


    Original     		PDF HM621400H ADJ-203-263B 400-mil HM621400HJP-10 HM621400HJP-12 HM621400HJP-15 HM621400HLJP-10 HM621400HLJP-12 HM621400HLJP-15 Z 263B HM621400H HM621400HJP-10 HM621400HJP-12 HM621400HJP-15 HM621400HLJP-10 HM621400HLJP-12 HM621400HLJP-15 Hitachi DSA00189

    Untitled

    Abstract: No abstract text available
    Text: HM621400HC Series 4M High Speed SRAM 4-Mword x 1-bit ADE-203-1199B (Z) Rev. 1.0 Nov. 30, 2001 Description The HM621400HC is a 4-Mbit high speed static RAM organized 4-Mword × 1-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell)and high speed circuit designing


    Original     		PDF HM621400HC ADE-203-1199B 400-mil 32-pin HM621400HCJP-10 HM621400HCLJP-10 HM621400CJP10

    Hitachi DSAUTAZ006

    Abstract: No abstract text available
    Text: HM621400HC Series 4M High Speed SRAM 4-Mword x 1-bit ADE-203-1199 (Z) Preliminary Rev. 0.0 Nov. 30, 2000 Description The HM621400HC is a 4-Mbit high speed static RAM organized 4-Mword × 1-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell)and high speed circuit designing


    Original     		PDF HM621400HC ADE-203-1199 400-mil 32-pin HM621400HCJP-10 HM621400HCLJP-10 Hitachi DSAUTAZ006

    HM621400HC

    Abstract: HM621400HCJP-10 HM621400HCLJP-10 transistor marking CS Hitachi DSA00316
    Text: HM621400HC Series 4M High Speed SRAM 4-Mword x 1-bit ADE-203-1199B (Z) Rev. 1.0 Nov. 30, 2001 Description The HM621400HC is a 4-Mbit high speed static RAM organized 4-Mword × 1-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell)and high speed circuit designing


    Original     		PDF HM621400HC ADE-203-1199B 400-mil 32-pin D-85622 D-85619 HM621400HCJP-10 HM621400HCLJP-10 transistor marking CS Hitachi DSA00316

    row decoder

    Abstract: transistor a13 A15 -5Y13 A18 transistor A8 diode diode a3 diode a7 HM621400HC
    Text: HM621400HC Series Block Diagram LSB A15 A14 A13 A6 A7 A8 A12 A11 A3 A1 (MSB) Row decoder Internal voltage generater 1024-row x 256-column × 16-block × 1-bit (4,194,304 bits) VSS CS Din Dout Column I/O Column decoder CS 4 CS A9A10A21A19 A20A17A16A5 A0 A2 A4 A18


    Original     		PDF HM621400HC 1024-row 256-column 16-block A9A10A21A19 A20A17A16A5 row decoder transistor a13 A15 -5Y13 A18 transistor A8 diode diode a3 diode a7

    Untitled

    Abstract: No abstract text available
    Text: HM621400HC Series Pin Arrangement 32-pin SOJ A0 A1 A2 A3 A4 A5 VCC VSS Din A6 A7 A8 A9 A10 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 A21 A20 A19 A18 A17 A16 VSS VCC Dout A15 A14 A13 A12 A11 NC Top view Pin Description


    Original     		PDF HM621400HC 32-pin

    HM621400H

    Abstract: HM621400HJP-10 HM621400HJP-12 HM621400HJP-15 HM621400HLJP-10 HM621400HLJP-12 HM621400HLJP-15 Hitachi DSA0044
    Text: HM621400H Series 4M High Speed SRAM 4-Mword x 1-bit ADE-203-787D (Z) Rev. 1.0 Sept. 15, 1998 Description The HM621400H is a 4-Mbit high speed static RAM organized 4-Mword × 1-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell)and high speed


    Original     		PDF HM621400H ADE-203-787D 400-mil 32-pin HM621400HJP-10 HM621400HJP-12 HM621400HJP-15 HM621400HLJP-10 HM621400HLJP-12 HM621400HLJP-15 Hitachi DSA0044

    diode a3

    Abstract: transistor a13 HM621400HC
    Text: HM621400HC Series Block Diagram LSB A15 A14 A13 A6 A7 A8 A12 A11 A3 A1 (MSB) Row decoder Internal voltage generator 1024-row x 256-column × 16-block × 1-bit (4,194,304 bits) VSS CS Din Dout Column I/O Column decoder CS A9A10A21A19 A20A17A16A5 A0 A2 A4 A18


    Original     		PDF HM621400HC 1024-row 256-column 16-block A9A10A21A19 A20A17A16A5 diode a3 transistor a13

    HM621400H

    Abstract: HM621400HJP-10 HM621400HJP-12 HM621400HJP-15 HM621400HLJP-10 HM621400HLJP-12 HM621400HLJP-15 Hitachi DSA00197
    Text: HM621400H Series 4M High Speed SRAM 4-Mword x 1-bit ADE-203-787D (Z) Rev. 1.0 Sep. 15, 1998 Description The HM621400H is a 4-Mbit high speed static RAM organized 4-Mword × 1-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell)and high speed circuit


    Original     		PDF HM621400H ADE-203-787D 400-mil 32-pin HM621400HJP-10 HM621400HJP-12 HM621400HJP-15 HM621400HLJP-10 HM621400HLJP-12 HM621400HLJP-15 Hitachi DSA00197

    Hitachi DSAUTAZ006

    Abstract: No abstract text available
    Text: HM621400HC Series Package Dimensions HM621400HCJP/HCLJP Series CP-32DB Unit: mm 3.50 ± 0.26 1.30 Max *0.43 ± 0.10 0.41 ± 0.08 1.27 2.85 ± 0.12 16 0.74 0.80 +0.25 –0.17 1 11.18 ± 0.13 17 10.16 ± 0.13 32 20.71 21.08 Max 9.40 ± 0.25 0.10 *Dimension including the plating thickness


    Original     		PDF HM621400HC HM621400HCJP/HCLJP CP-32DB) CP-32DB Hitachi DSAUTAZ006

    Hitachi DSAUTAZ006

    Abstract: No abstract text available
    Text: HM621400HC Series Package Dimensions HM621400HCJP/HCLJP Series CP-32DB As of July, 2001 Unit: mm 3.50 ± 0.26 1.30 Max *0.43 ± 0.10 0.41 ± 0.08 1.27 2.85 ± 0.12 16 0.74 0.80 +0.25 –0.17 1 11.18 ± 0.13 17 10.16 ± 0.13 32 20.71 21.08 Max 9.40 ± 0.25


    Original     		PDF HM621400HC HM621400HCJP/HCLJP CP-32DB) CP-32DB Hitachi DSAUTAZ006

    lh62256

    Abstract: 128k x8 SRAM TSOP upd431000-70 TC55257 Hitachi HM628512 EOL hm62v16512 CY7C1049 hm62256 K6R4004V1C UPD43256
    Text: Hitachi SRAM Cross-Reference Guide June 2001 256K Low Power Bytewide 32K x8 55ns, 70ns and 85ns standard speeds Basic Part # HM62256 K6T0808C1 CY62256 TC55257 uPD43256 W24257 GM76C256C LH62256 Hitachi * Samsung Cypress Toshiba NEC Winbond Hyundai Sharp Speed s


    Original     		PDF HM62256 K6T0808C1 CY62256 TC55257 uPD43256 W24257 GM76C256C LH62256 HM628128 K6T1008C2 lh62256 128k x8 SRAM TSOP upd431000-70 TC55257 Hitachi HM628512 EOL hm62v16512 CY7C1049 hm62256 K6R4004V1C

    7054F

    Abstract: BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557
    Text: INDEX General General Information Semiconductor Packages Sales Locations Microcontroller Microcontroller General MultiChipModules Smart Card Micro. Overview Micro. Shortform Micro. Hardware Manual Micro. Program. Manual Micro. Application Notes LCD Controller / Driver


    Original     		PDF 2sc4537 2sc454. 2sc4591 2sc4592 2sc4593 2sc460. 2sc4628 2sc4629 2sc4643 2sc4680 7054F BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557

    4Mx4 dram simm

    Abstract: TTP32 SIMM72 dram card 60 pin 8KX8 TTP42 4MX16* dram fpm 4Mx8 dram simm 32MByte 334k
    Text: Memory Overview Package Type -Pin Count Supply Voltage Flash_Card ATA-68 3.3; 5.0 ATA flash card, ISA Bus I/F NVM Flash_Card CF-50 3.3; 5.0 Compact flash card 15MByte NVM Flash_Card ATA-68 3.3; 5.0 ATA flash card, ISA Bus I/F HB286015C3 15MByte NVM Flash_Card


    Original     		PDF ATA-68 CF-50 15MByte HB286015C3 HB286030A3 30MByte 4Mx4 dram simm TTP32 SIMM72 dram card 60 pin 8KX8 TTP42 4MX16* dram fpm 4Mx8 dram simm 32MByte 334k

    HM621400HCLJP-12

    Abstract: HM621400HC HM621400HCJP-10 HM621400HCJP-12 HM621400HCLJP-10
    Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


    Original     		PDF D-85622 D-85619 HM621400HCLJP-12 HM621400HC HM621400HCJP-10 HM621400HCJP-12 HM621400HCLJP-10

    BP-119

    Abstract: CP44 SRAM 16k*8
    Text: Device Name Total Size Family Device Organi- Access PackageSupply Remarks sation Time TypeVoltage max Pincount [V] [ns] 2,1 MMC-7 2.70 - 3.60 MultiMediaCard TM 2.5 HB288016MM1 16Mbyte NVM Flash_Card HB288032A5 32Mbyte NVM Flash_Card - 55 70 ATA-68 3.30 - 5.00 PC ATA card


    Original     		PDF HB288016MM1 16Mbyte ATA-68 HB288032A5 32Mbyte HB288032A5SR ATA-68 HB288032A6 320Mbyte BP-119 CP44 SRAM 16k*8

    4Mx1 sram

    Abstract: HM51W17805 16Mx8 dram EDO HB286060A3 HB289016A4 HN29W16814 8mx32 simm 72 pin FP-28 HB289048C4 TFP-32
    Text: Memories Overview Device Name Total Size Family Device Organisation Access Cycle Time Package Time min ns Type - Pin max(ns) Count Supply Voltage Remarks link HB286008A3 8Mbyte NVM Flash_Card - - - ATA-68 3.0-3.6 4.5-5.5 ATA flash card, ISA Bus I/F HB286008C3


    Original     		PDF HB286008A3 ATA-68 HB286008C3 CF-50 HB286015A3 15Mbyte HB286015C3 4Mx1 sram HM51W17805 16Mx8 dram EDO HB286060A3 HB289016A4 HN29W16814 8mx32 simm 72 pin FP-28 HB289048C4 TFP-32

    Untitled

    Abstract: No abstract text available
    Text: HM621400H Series 4M High speed SRAM 4-Mword x 1-bit HITACHI ADE-203-787A (Z) Preliminary, Rev. 0.1 Nov. 20, 1997 Description The HM621400H is an asynchronous high speed static RAM organized as 4-Mword X 1-bit. It has realized high speed access time (10/12/15 ns) with employing 0.35 Jim CMOS process and high speed circuit


    OCR Scan     		PDF HM621400H ADE-203-787A 400-mil 32-pin ns/12 ns/15

    Untitled

    Abstract: No abstract text available
    Text: HM621400H Series 4M High Speed SRAM 4-Mword x 1-bit HITACHI ADE-203-787C (Z) Preliminary, Rev. 0.3 May 15, 1998 Description The HM621400H is an asynchronous high speed static RAM organized as 4-Mword x 1-bit. It has realized high speed access time (10/12/15 ns) with employing 0.35 (Am CMOS process (4-transistor + 2-poly


    OCR Scan     		PDF HM621400H ADE-203-787C 400-mil 32-pin mem10/1

    Untitled

    Abstract: No abstract text available
    Text: HM621400H Series 4M High Speed SRAM 4-Mword x 1-bit HITACHI ADE-203-787D (Z) Rev. 1.0 Sept. 15, 1998 Description The HM621400H is a 4-Mbit high speed static RAM organized 4-Mword x 1-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell)and high speed


    OCR Scan     		PDF HM621400H ADE-203-787D 400-mil 32-pin