row decoder
Abstract: transistor a13 A15 -5Y13 A18 transistor A8 diode diode a3 diode a7 HM621400HC
Text: HM621400HC Series Block Diagram LSB A15 A14 A13 A6 A7 A8 A12 A11 A3 A1 (MSB) Row decoder Internal voltage generater 1024-row x 256-column × 16-block × 1-bit (4,194,304 bits) VSS CS Din Dout Column I/O Column decoder CS 4 CS A9A10A21A19 A20A17A16A5 A0 A2 A4 A18
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HM621400HC
1024-row
256-column
16-block
A9A10A21A19
A20A17A16A5
row decoder
transistor a13
A15 -5Y13
A18 transistor
A8 diode
diode a3
diode a7
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diode a3
Abstract: transistor a13 HM621400HC
Text: HM621400HC Series Block Diagram LSB A15 A14 A13 A6 A7 A8 A12 A11 A3 A1 (MSB) Row decoder Internal voltage generator 1024-row x 256-column × 16-block × 1-bit (4,194,304 bits) VSS CS Din Dout Column I/O Column decoder CS A9A10A21A19 A20A17A16A5 A0 A2 A4 A18
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HM621400HC
1024-row
256-column
16-block
A9A10A21A19
A20A17A16A5
diode a3
transistor a13
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HM621400HC
Abstract: HM621400HCJP-10 HM621400HCLJP-10 Hitachi DSA00358
Text: HM621400HC Series 4M High Speed SRAM 4-Mword x 1-bit ADE-203-1199 (Z) Preliminary Rev. 0.0 Nov. 30, 2000 Description The HM621400HC is a 4-Mbit high speed static RAM organized 4-Mword × 1-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell)and high speed circuit designing
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HM621400HC
ADE-203-1199
400-mil
32-pin
HM621400HCJP-10
HM621400HCLJP-10
Hitachi DSA00358
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HM621400HC
Abstract: HM621400HCJP-10 HM621400HCLJP-10 Hitachi DSA00190
Text: HM621400HC シリーズ 4M High Speed SRAM 4-Mword x 1-bit ADJ-203-566 (Z) 暫定仕様 Rev. 0.0 ’00. 11. 30 概要 HM621400HC シリーズは 4M ワード×1 ビット構成の 4M ビット高速スタティック RAM です。CMOS（6 トランジスタメモリセル） プロセス技術を採用し，高密度，高性能，低消費電 力を実現しました。したが
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HM621400HC
ADJ-203-566
HM621400HCJP-10
HM621400HCLJP-10
400-mil
32-pin
CP-32DB)
HM621400HC
HM621400HCJP-10
HM621400HCLJP-10
Hitachi DSA00190
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HM621400HC
Abstract: HM621400HCJP-10 HM621400HCLJP-10 transistor marking CS Hitachi DSA00316
Text: HM621400HC Series 4M High Speed SRAM 4-Mword x 1-bit ADE-203-1199B (Z) Rev. 1.0 Nov. 30, 2001 Description The HM621400HC is a 4-Mbit high speed static RAM organized 4-Mword × 1-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell)and high speed circuit designing
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Original
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HM621400HC
ADE-203-1199B
400-mil
32-pin
D-85622
D-85619
HM621400HCJP-10
HM621400HCLJP-10
transistor marking CS
Hitachi DSA00316
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HM621400HCLJP-12
Abstract: HM621400HC HM621400HCJP-10 HM621400HCJP-12 HM621400HCLJP-10
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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D-85622
D-85619
HM621400HCLJP-12
HM621400HC
HM621400HCJP-10
HM621400HCJP-12
HM621400HCLJP-10
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