Untitled
Abstract: No abstract text available
Text: HL6312/13G AlGaInP Laser Diodes Description The HL6312/13G are 0.63 µm band AlGaInP laser diodes with a multi-quantum well MQW structure. Wavelength is equal to He-Ne Gas laser. They are suitable as light sources in bar code readers , laser levelers and various other types of optical equipment. Hermetic sealing of the package achieves high
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HL6312/13G
HL6312/13G
HL6312/13G:
HL6312G
HL6313G
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opnext
Abstract: HL1359CP laser diode bare chip 1550 DFB laser bare die HL1357CP HL1511AF HL1513AF laser diode for optical communication Laser Diode 1550 nm dBm dfb 10g
Text: Opnext leads the way in the growing field of optics, with a combination of experience and vision. In this new era of light, with a focus on quality optical technologies, Opnext offers unique leading edge optodevices in such areas as fiber-optic communications, optical storage, and measuring
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D-85622
opdb-090103
opnext
HL1359CP
laser diode bare chip 1550
DFB laser bare die
HL1357CP
HL1511AF
HL1513AF
laser diode for optical communication
Laser Diode 1550 nm dBm
dfb 10g
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biconvex lens with focal length 1 m and diameter 25.4 mm
Abstract: laser diode DVD 100mw DL-3147-011 laser diode toshiba 780nm 650nm laser diode 200mw TOLD9225M mitsubishi laser diode OPHIR pd200 collimated LED 670 nm DL3147-011
Text: Laser Diodes, Optics, and Related Components - Optima Laser Diodes Laser Diode Mounting Kits Laser Diode Optics Glass Aspheric Lenses Plastic Aspheric Lenses Multi-element Lenses Diode Laser Modules OEM Diode Laser Modules Collimated Diode Lasers Optical Power
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658nm
ML1016R
685nm
ML1012R
785nm
ML64114R
Revised11JUN99
biconvex lens with focal length 1 m and diameter 25.4 mm
laser diode DVD 100mw
DL-3147-011
laser diode toshiba 780nm
650nm laser diode 200mw
TOLD9225M
mitsubishi laser diode
OPHIR pd200
collimated LED 670 nm
DL3147-011
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208017
Abstract: No abstract text available
Text: HL6312G/13G ODE-208-017 Z Rev.0 Jul. 01, 2005 AlGaInP Laser Diodes Description The HL6312G/13G are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. Wavelength is equal to He-Ne Gas laser. They are suitable as light sources in bar code readers, laser levelers and various other types
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HL6312G/13G
HL6312G/13G
ODE-208-017
HL6312G/13G:
HL6312G
HL6313G
208017
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HL6312G
Abstract: HL6313G Hitachi DSA00230
Text: HL6312G/13G AlGaInP Laser Diodes ADE-208-190G Z 8th Edition Dec. 2000 Description The HL6312G/13G are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. Wavelength is equal to He-Ne Gas laser. They are suitable as light sources in bar code readers, laser
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HL6312G/13G
ADE-208-190G
HL6312G/13G
HL6312G/13G:
HL6312G
HL6312G
HL6313G
Hitachi DSA00230
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hitachi DC9300
Abstract: 1550nm Laser Diode with butterfly pin package DC9300 1550nm Laser Diode butterfly hitachi HL7851G DR9301 780nm 10mW laser diodes LB7671 RCV5932 laser DFB 1550nm 10mW
Text: C 1998 Dirk Plha HITACHI OPTOELECTRONIC DEVICES HITACHI OPTODEVICES • Industrial and Information Laser Diodes For laser levellers, alignment systems, bar code readers, distance measurement and optical storage, Hitachi offers a complete line-up of 635nm to 830nm laser diodes
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635nm
830nm
HE7601
HE8404
HE8807
HE8811
HE8812
HE7601SG
HE8404SG
hitachi DC9300
1550nm Laser Diode with butterfly pin package
DC9300
1550nm Laser Diode butterfly
hitachi HL7851G
DR9301
780nm 10mW laser diodes
LB7671
RCV5932
laser DFB 1550nm 10mW
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650nm 50mw
Abstract: 780nm 5MW infrared laser diodes photo magneto electric camera hitachi HL6738 laser diode DVD 780nm 10mW laser diodes Hitachi DSAUTAZ005 ld261 PO40
Text: ADE-508-011C Information and Industry Laser Diodes Information and Industry Laser Diodes Application Note Publication Date: 1st Edition, June 1996 4th Edition, February 1999 Published by: Electronic Devices Sales & Marketing Group Semiconductor & Integrated Circuits
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ADE-508-011C
HL8325G
650nm 50mw
780nm 5MW infrared laser diodes
photo magneto electric
camera hitachi
HL6738
laser diode DVD
780nm 10mW laser diodes
Hitachi DSAUTAZ005
ld261
PO40
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LD5033
Abstract: opnext HL6366DG opnext l HL8340MG A 785nm HL6545MG 660nm 100mw HL8341MG HL6313G
Text: Optodevices Opnext Lights It Up Opnext is paving the way to a future of exciting laser developments and ground breaking applications. Our industry heritage, future-focused thinking and deep commitment to research and development help us anticipate and meet
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OPD-010908
LD5033
opnext
HL6366DG
opnext l
HL8340MG A
785nm
HL6545MG
660nm 100mw
HL8341MG
HL6313G
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208017
Abstract: ODE-208-017 HL6312G HL6313G
Text: HL6312G/13G ODE-208-017 Z Rev.0 Jul. 01, 2005 AlGaInP Laser Diodes Description The HL6312G/13G are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. Wavelength is equal to He-Ne Gas laser. They are suitable as light sources in bar code readers, laser levelers and various other types
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HL6312G/13G
ODE-208-017
HL6312G/13G
HL6312G/13G:
HL6312G
HL6313G
208017
ODE-208-017
HL6312G
HL6313G
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opnext
Abstract: laser diode DVD 100mw opnext laser diode 660nm 100mw HL6348MG HL1357CP HL1511AF HL1513AF HL6314MG 1310nm fp 10g
Text: Opnext leads the way in the growing field of optics, with a combination of experience and vision. In this new era of light, with a focus on quality optical technologies, Opnext offers unique leading edge optodevices in such areas as fiber-optic communications, optical storage, and measuring
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D-85622
opdb-09
opnext
laser diode DVD 100mw
opnext laser diode
660nm 100mw
HL6348MG
HL1357CP
HL1511AF
HL1513AF
HL6314MG
1310nm fp 10g
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laser diode 940 nM 200mW
Abstract: LD5033 80km* opnext ps7055 LE7062 laser DFB chip 1310nm 2.5G LB7962 10G APD chip HL6530MG Photodiode, 1550nm, butterfly package
Text: opnext 2005 / 2006 HITACHI OPTODEVICES Powered by opnext Powered by HITACHI Opnext leads the way in the growing field of optics, with a combination of experience and vision. In this new era of light, Opnext offers unique leading-edge optodevices in such areas as fiber optic communications, optical storage, and measuring instruments and encoders. Constant refinement of established technologies offer cutting-edge solutions to a wide variety of needs, providing the power to reshape our world and
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200mW
laser diode 940 nM 200mW
LD5033
80km* opnext
ps7055
LE7062
laser DFB chip 1310nm 2.5G
LB7962
10G APD chip
HL6530MG
Photodiode, 1550nm, butterfly package
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laser diode 670nm 40mW
Abstract: dvd writer laser "Hitachi Kodaira Semiconductor" low noise, 780nm, 5mw 650NM laser diode 5mw ADE-508-011E photo magneto electric hitachi laser diode HL6720G 650nm 5mw laser with collimator
Text: Information and Industry Laser Diodes Application Note ADE-508-011E Hitachi 5/14/01 Safety Considerations Be sure to avoid direct exposure of human eyes to high power laser beams emitted from laser diodes. Even though barely visible and/or invisible to the human
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ADE-508-011E
laser diode 670nm 40mW
dvd writer laser
"Hitachi Kodaira Semiconductor"
low noise, 780nm, 5mw
650NM laser diode 5mw
ADE-508-011E
photo magneto electric
hitachi laser diode
HL6720G
650nm 5mw laser with collimator
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He-Ne Laser Power Supply circuits
Abstract: HL6312G HL6313G
Text: HL6312G/13G AlGaInP Laser Diodes ODE-208-190I Z Rev.9 Mar. 2005 Description The HL6312G/13G are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. Wavelength is equal to He-Ne Gas laser. They are suitable as light sources in bar code readers, laser
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HL6312G/13G
ODE-208-190I
HL6312G/13G
HL6312G/13G:
HL6312G
HL6313G
He-Ne Laser Power Supply circuits
HL6312G
HL6313G
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Hitachi DSA002726
Abstract: No abstract text available
Text: HL6312/13G AlGaInP Laser Diodes Description The HL6312/13G are 0.63 µm band AlGaInP laser diodes with a multi-quantum well MQW structure. Wavelength is equal to He-Ne Gas laser. They are suitable as light sources in bar code readers, laser levelers and various other types of optical equipment. Hermetic sealing of the package achieves high
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HL6312/13G
HL6312/13G
HL6312/13G:
HL6312G
HL6313G
Hitachi DSA002726
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HL6312G
Abstract: HL6313G
Text: HL6312G/13G AlGaInP Laser Diodes ODE-208-190H Z Rev.8 Jan. 2003 Description The HL6312G/13G are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. Wavelength is equal to He-Ne Gas laser. They are suitable as light sources in bar code readers, laser
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HL6312G/13G
ODE-208-190H
HL6312G/13G
HL6312G/13G:
HL6312G
HL6313G
HL6312G
HL6313G
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HL6362MG
Abstract: HL6355MG hl6344g HL6366DG HL6750MG HL6545MG HL6348MG opnext l HL6354MG HL8341MG
Text: Oct. 2007 Guide for Red & Infrared Laser Diodes Line up Safety Considerations Be sure to avoid direct exposure of human eyes to high power laser beams emitted from laser diodes. Even though barely visible and /or invisible to the human eye, they can be quite harmful. In particular, avoid looking directly into a laser diode or collimated
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2008B
D-85622
HL6362MG
HL6355MG
hl6344g
HL6366DG
HL6750MG
HL6545MG
HL6348MG
opnext l
HL6354MG
HL8341MG
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dfb activation energy
Abstract: "Hitachi Kodaira Semiconductor" EA-DFB 1455B HF8807 1310nm DFB BH LASER HL6348MG opnext l laser diode DVD 100mw HL6336G
Text: Optodevice Data Book ODE-408-001I Rev.9 Mar. 2003 Opnext Japan, Inc. Safety Considerations Be sure to avoid direct exposure of human eyes to high power laser beams emitted from laser diodes. Even though barely visible and/or invisible to the human eye, they can be quite harmful. In particular, avoid looking directly into a
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ODE-408-001I
HL1570AF
HL1569AF
dfb activation energy
"Hitachi Kodaira Semiconductor"
EA-DFB
1455B
HF8807
1310nm DFB BH LASER
HL6348MG
opnext l
laser diode DVD 100mw
HL6336G
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sld1233
Abstract: SLD1233VL advantest TR6143 DIODE 36G marking code SLD68518460 DL-3148-234 laser diode DVD Mechanical Layout 4039-01 SICK cross refeRENCE SLD67018250
Text: Quick Reference Guide for Visible and Infrared Laser Diodes ADE-308-007C Rev.3 Aug. 2002 Hitachi Safety Considerations Be sure to avoid direct exposure of human eyes to high power laser beams emitted from laser diodes. Even though barely visible and/or invisible to the
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ADE-308-007C
sld1233
SLD1233VL
advantest TR6143
DIODE 36G marking code
SLD68518460
DL-3148-234
laser diode DVD Mechanical Layout
4039-01
SICK cross refeRENCE
SLD67018250
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Untitled
Abstract: No abstract text available
Text: HL6313G Preliminary _ AiGainP ld Description HL6313G is a 0.63 urn AiGainP laser diode with a multi-quantum well (MQW) structure. Wavelength is equal to He-Ne Gas laser. It is suitable as a light source for bar code readers, laser levelers and various other
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HL6313G
HL6313G
HL6313G:
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Untitled
Abstract: No abstract text available
Text: HL6312/13G AlGalnP Laser Diodes HITACHI February 1997 Description The HL6312/13G are 0.63 Am band AlGalnP laser diodes with a multi-quantum well (MQW structure. Wavelength is equal to He-Ne Gas laser. They are suitable as light sources in bar code readers, laser
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HL6312/13G
HL6312/13G
HL6312/13G:
HL6312G
HL631h
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HL7806
Abstract: 6808X L7851 hl7852 HL6411G HL8325G hitachi HL7852 hl7806g HL7851
Text: Product Lineup W avelength Visible and infrared laser diodes 633 nm O ptical output 3 mW Internal circuit Part num ber Main application LD ^P * HL6314M G HL6316G HL6411G* Pointer HL6315G f Pointer HL6312G Bar code reader H L 6313G t Bar code reader HL6720G
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HL6314M
HL6316G
HL6411G*
HL6315G
HL6312G
6313G
HL6720G
HL6724M
HL6712G
HL6722G
HL7806
6808X
L7851
hl7852
HL6411G
HL8325G
hitachi HL7852
hl7806g
HL7851
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Untitled
Abstract: No abstract text available
Text: HL6312/13G AIGalnP Laser Diodes Description The H L6312/13G are 0.63 ¿im band A IG alnP laser diodes w ith a m ulti-quantum w ell M Q W structure. W avelength is equal to H e-N e G as laser. T hey are suitable as light sources in b ar code readers . laser
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HL6312/13G
HL6312G/HL6313G
HL6312/13G:
HL6312G
HL6313G
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HL7806
Abstract: HE8807CL HL7812G HE8811 HL7812 he130
Text: Package Variations Laser Diodes Packages Open-air type rar Features Applicable Products ’ For experimental use •For module assembly HLP5400, HL1322A, HL1341A, HL1362A, HL1521A, HL1541A, HL1551A ■For module assembly • Chip carrier stem HL1321AC, HL1322AC, HL1341AC,
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HLP5400,
HL1322A,
HL1341A,
HL1362A,
HL1521A,
HL1541A,
HL1551A
HL1321AC,
HL1322AC,
HL1341AC,
HL7806
HE8807CL
HL7812G
HE8811
HL7812
he130
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HE8807CL
Abstract: HL7851
Text: Product Lineup-Visible and Infrared Laser Diodes t 10 : Under development Product Lineup Visible and Infrared Laser Diodes cont 1— Ì Wavelength Optical Output 785 nm 5 mW internal circuit L D ^ PD L°ypD Main application Part No. HL7836MG Laser beam
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HL7836MG
HL7843MG
HL7859MGt
HL7853MG
HL7851G
HL7852G
HL8325G
HR1103CX
HR11Q4CX
HR1107CR
HE8807CL
HL7851
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