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    HGTP7N60B3 Search Results

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    HGTP7N60B3 Price and Stock

    Rochester Electronics LLC HGTP7N60B3D

    IGBT, 14A, 600V, N-CHANNEL, TO-2
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey HGTP7N60B3D Bulk 278
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    • 1000 $1.08
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    HGTP7N60B3D Tube 278
    • 1 -
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    • 1000 $1.08
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    onsemi HGTP7N60B3D

    IGBT 600V 14A 60W TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey HGTP7N60B3D Tube
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    Fairchild Semiconductor Corporation HGTP7N60B3D

    HGTP7N60 - N-Channel Insulated Gate Bipolar Transistor '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics HGTP7N60B3D 2,347 1
    • 1 $1.04
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    • 100 $0.9776
    • 1000 $0.884
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    Harris Semiconductor HGTP7N60B3D

    HGTP7N60 - N-Channel Insulated Gate Bipolar Transistor '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics HGTP7N60B3D 16,763 1
    • 1 $1.04
    • 10 $1.04
    • 100 $0.9776
    • 1000 $0.884
    • 10000 $0.884
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    HGTP7N60B3 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HGTP7N60B3 Fairchild Semiconductor 14A, 600V, UFS N-Channel IGBT Original PDF
    HGTP7N60B3 Fairchild Semiconductor 600V, UFS Series N-Channel IGBT Original PDF
    HGTP7N60B3 Intersil 14A, 600V, UFS Series N-Channel IGBTs Original PDF
    HGTP7N60B3 Intersil 14A, 600V, UFS Series N-Channel lGBTs Scan PDF
    HGTP7N60B3D Fairchild Semiconductor 14 A, 600 V, UFS N-Channel IGBT with Anti-Parallel Hyperfast Diode Original PDF
    HGTP7N60B3D Fairchild Semiconductor 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Original PDF
    HGTP7N60B3D Harris Semiconductor 600V / 1200V UFS Series IGBTs Original PDF
    HGTP7N60B3D Intersil 14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode Original PDF
    HGTP7N60B3D Intersil 14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode Scan PDF
    HGTP7N60B3D_NL Fairchild Semiconductor 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Original PDF

    HGTP7N60B3 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    g7n60b3d

    Abstract: igbt g7n60b3d G7N60B3 HGT1S7N60B3DS HGT1S7N60B3DS9A HGTP7N60B3D RHRD660 2MH22 150OC
    Text: HGTP7N60B3D, HGT1S7N60B3DS Data Sheet January 2000 14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode The HGTP7N60B3D and HGT1S7N60B3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the


    Original     		HGTP7N60B3D, HGT1S7N60B3DS HGTP7N60B3D HGT1S7N60B3DS 150oC TA49190. RHRD660 TA49057) g7n60b3d igbt g7n60b3d G7N60B3 HGT1S7N60B3DS9A RHRD660 2MH22 PDF

    G7N60B3

    Abstract: G7N60B HGT1S7N60B3S HGTD7N60B3S HGTD7N60B3S9A HGTP7N60B3 RHRD660 G7N60 Igbts guide TA49190
    Text: HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3 Data Sheet January 2002 14A, 600V, UFS Series N-Channel IGBTs Features The HGTD7N60B3S, HGT1S7N60B3S and HGTP7N60B3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These


    Original     		HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3 HGT1S7N60B3S 150oC. HGTP7N60B3 G7N60B3 G7N60B HGTD7N60B3S HGTD7N60B3S9A RHRD660 G7N60 Igbts guide TA49190 PDF

    g7n60

    Abstract: G7N60B3
    Text: HGTP7N60B3D, HGT1S7N60B3DS Data Sheet December 2001 14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode The HGTP7N60B3D and HGT1S7N60B3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the


    Original     		HGTP7N60B3D, HGT1S7N60B3DS HGTP7N60B3D HGT1S7N60B3DS 150oC TA49190. RHRD660 TA49057) g7n60 G7N60B3 PDF

    Untitled

    Abstract: No abstract text available
    Text: IGBT ТРАНЗИСТОРЫ Наименование HGTD3N60B3S HGTG12N60B3 HGTG12N60B3D HGTG12N60C3D HGTG30N60B3 HGTP12N60B3 HGTP12N60B3D HGTP14N36G3VL HGTP14N40F3VL HGTP20N60B3 HGTP3N60B3 HGTP7N60B3 HGTP7N60B3D IRG4BC20UD IRG4BC30F IRG4BC30U IRG4BC30UD


    Original     		HGTD3N60B3S HGTG12N60B3 HGTG12N60B3D HGTG12N60C3D HGTG30N60B3 HGTP12N60B3 HGTP12N60B3D HGTP14N36G3VL HGTP14N40F3VL HGTP20N60B3 PDF

    G7N60

    Abstract: G7N60B3D tb105 igbt g7n60b3d HGT1S7N60B3DS HGT1S7N60B3DS9A HGTP7N60B3D RHRD660
    Text: HGTP7N60B3D, HGT1S7N60B3DS Data Sheet December 2001 14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode The HGTP7N60B3D and HGT1S7N60B3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the


    Original     		HGTP7N60B3D, HGT1S7N60B3DS HGTP7N60B3D HGT1S7N60B3DS 150oC TA49190. RHRD660 TA49057) G7N60 G7N60B3D tb105 igbt g7n60b3d HGT1S7N60B3DS9A RHRD660 PDF

    G7N60B3

    Abstract: G7N60 G7N60B HGTD7N60B3S HGTD7N60B3S9A HGTP7N60B3 HGT1S7N60B3S
    Text: HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3 Data Sheet January 2000 14A, 600V, UFS Series N-Channel IGBTs Features The HGTD7N60B3S, HGT1S7N60B3S and HGTP7N60B3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These


    Original     		HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3 HGT1S7N60B3S G7N60B3 G7N60 G7N60B HGTD7N60B3S HGTD7N60B3S9A HGTP7N60B3 PDF

    G7N60B3D

    Abstract: G7N60B3 HGT1S7N60B3DS HGT1S7N60B3DS9A HGTP7N60B3D RHRD660 TA49190
    Text: HGTP7N60B3D, HGT1S7N60B3DS Data Sheet December 2001 14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode The HGTP7N60B3D and HGT1S7N60B3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the


    Original     		HGTP7N60B3D, HGT1S7N60B3DS HGTP7N60B3D HGT1S7N60B3DS 150oC TA49190. RHRD660 TA49057) G7N60B3D G7N60B3 HGT1S7N60B3DS9A RHRD660 TA49190 PDF

    G7N60B3

    Abstract: G7N60B HGT1S7N60B3 HGT1S7N60B3S HGTD7N60B3 HGTD7N60B3S HGTD7N60B3S9A HGTP7N60B3
    Text: HGTD7N60B3, HGTD7N60B3S, HGT1S7N60B3, HGT1S7N60B3S, HGTP7N60B3 Semiconductor 14A, 600V, UFS Series N-Channel IGBTs November 1997 Features Description • 14A, 600V, TC = 25oC The HGTD7N60B3, HGTD7N60B3S, HGT1S7N60B3, HGT1S7N60B3S and HGTP7N60B3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high


    Original     		HGTD7N60B3, HGTD7N60B3S, HGT1S7N60B3, HGT1S7N60B3S, HGTP7N60B3 HGT1S7N60B3S HGTP7N60B3 G7N60B3 G7N60B HGT1S7N60B3 HGTD7N60B3 HGTD7N60B3S HGTD7N60B3S9A PDF

    g7n60b3

    Abstract: g7N60B G7N60
    Text: HGTD7N60B3, HGTD7N60B3S, HGT1S7N60B3, HGT1S7N60B3S, HGTP7N60B3 S E M I C O N D U C T O R 14A, 600V, UFS Series N-Channel IGBTs November 1997 Features Description • 14A, 600V, TC = 25oC The HGTD7N60B3, HGTD7N60B3S, HGT1S7N60B3, HGT1S7N60B3S and HGTP7N60B3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high


    Original     		HGTD7N60B3, HGTD7N60B3S, HGT1S7N60B3, HGT1S7N60B3S, HGTP7N60B3 HGT1S7N60B3S HGTP7N60B3 g7n60b3 g7N60B G7N60 PDF

    g7n60b3d

    Abstract: igbt g7n60b3d HGT1S7N60B3DS HGT1S7N60B3DS9A HGTP7N60B3D RHRD660 G7N60
    Text: HGTP7N60B3D, HGT1S7N60B3DS Data Sheet January 2000 14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode The HGTP7N60B3D and HGT1S7N60B3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have


    Original     		HGTP7N60B3D, HGT1S7N60B3DS HGTP7N60B3D HGT1S7N60B3DS 150oC TA49190. RHRD660 TA49057) g7n60b3d igbt g7n60b3d HGT1S7N60B3DS9A RHRD660 G7N60 PDF

    G7N60B3

    Abstract: G7N60 G7N60B HGT1S7N60B3S HGTD7N60B3S HGTD7N60B3S9A HGTP7N60B3 RHRD660 TA49190
    Text: HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3 Data Sheet January 2000 14A, 600V, UFS Series N-Channel IGBTs Features The HGTD7N60B3S, HGT1S7N60B3S and HGTP7N60B3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These


    Original     		HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3 HGT1S7N60B3S G7N60B3 G7N60 G7N60B HGTD7N60B3S HGTD7N60B3S9A HGTP7N60B3 RHRD660 TA49190 PDF

    g7n60b3d

    Abstract: G7N60B3 igbt g7n60b3d
    Text: S E M I C O N D U C T O R HGTP7N60B3D, HGT1S7N60B3D, HGT1S7N60B3DS 14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode November 1997 Features Description • 14A, 600V, TC = 25oC The HGTP7N60B3D, HGT1S7N60B3D and HGT1S7N60B3DS are MOS gated high voltage switching devices combining


    Original     		HGTP7N60B3D, HGT1S7N60B3D, HGT1S7N60B3DS HGT1S7N60B3D HGT1S7N60B3DS 150oC TA49190. RHRD660 TA49057) g7n60b3d G7N60B3 igbt g7n60b3d PDF

    STR-G6551

    Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
    Text: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision


    Original     		2002-Sep. STR-G6551 STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312 PDF

    P channel 600v 20a IGBT

    Abstract: hg*20n60 600v HGTG30N60C3D 1200v 20a IGBT 1200v 30A to247 LC96585 UFS Series P-Channel HGTD3N60B3 HGTD3N60C3
    Text: HGTG20N60C3R HGTG20N60C3DR 2.3V TBD µJ HGTG30N60C3R HGTG30N60C3DR 2.3V TBD µJ HGTG20N60B3 HGTG20N60B3D 2.0V 1050µJ HGTG30N60B3 HGTG30N60B3D 2.2V 1700µJ HGTG40N60B3 2.0V 2500µJ HGTG20N60C3 HGTG20N60C3D 1.8V 1500µJ HGTG30N60C3 HGTG30N60C3D 1.8V 2500µJ


    Original     		HGTD3N60C3 HGTD7N60C3 HGTD3N60C3R HGTD7N60C3R 200ns HGTD3N60B3 HGTD7N60B3 HGTG20N60C3R HGTG20N60C3DR HGTG30N60C3R P channel 600v 20a IGBT hg*20n60 600v HGTG30N60C3D 1200v 20a IGBT 1200v 30A to247 LC96585 UFS Series P-Channel HGTD3N60B3 HGTD3N60C3 PDF

    HGTP7N60B3D

    Abstract: 1200v diode to247 1200v 30A to247 TO220AB IGBT 1200v HGTD3N60C3R DIODE 3A 600V HGTD3N60B3 HGTD3N60C3 HGTD3N60C3RS HGTD7N60B3S
    Text: 2-3 HGTG20N60C3R HGTG20N60C3DR 2.3V 3000µJ HGTG27N60C3R HGTG27N60C3DR 2.3V 2000µJ HGTG20N60B3 HGTG20N60B3D 2.0V 1050µJ HGTG30N60B3 HGTG30N60B3D 2.2V 1700µJ HGTG40N60B3 2.0V 2500µJ HGTG20N60C3 HGTG20N60C3D 1.8V 1500µJ HGTG30N60C3 HGTG30N60C3D 1.8V 2500µJ


    Original     		HGTD3N60C3 HGTD7N60C3 HGTD3N60C3R HGTD7N60C3R 200ns HGTD3N60B3 HGTD7N60B3 HGTG20N60C3R HGTG20N60C3DR HGTG27N60C3R HGTP7N60B3D 1200v diode to247 1200v 30A to247 TO220AB IGBT 1200v HGTD3N60C3R DIODE 3A 600V HGTD3N60B3 HGTD3N60C3 HGTD3N60C3RS HGTD7N60B3S PDF

    FQPF*7N65C APPLICATIONS

    Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
    Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM


    Original     		UF4003. UF4004. UF4005. UF4006. UF4007. USB10H. USB1T1102 USB1T11A. vKA75420M W005G FQPF*7N65C APPLICATIONS bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237 PDF

    igbt inverter welder schematic

    Abstract: SCHEMATIC 1000w smps 48V SMPS 1000w 24V 10A SMPS smps 500w half bridge smps 1000W full bridge mosfet smps 48V 100w SMPS inverter welder schematic half bridge converter 2kw
    Text: March 2002 Analog Discrete Interface & Logic Optoelectronics Discrete Solutions for Power Supplies Across the board. Around the world. Discrete Solutions for Power Supplies Fairchild Semiconductor is one of the world’s leading providers of Discrete Power Products, including Metal Oxide Semiconductor Field


    Original     		PDF

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent PDF

    g7n60b3d

    Abstract: G7N60B3 G7N60 igbt g7n60b3d N 407 Diode
    Text: HARRIS HGTP7N60B3D, HGT1S7N60B3D, HGT1S7N60B3DS S E M I C O N D U C T O R 14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode November 1997 Features Description • 14A, 600V, T C = 2 5 °C The HGTP7N60B3D, HGT1S7N60B3D and HGT1S7N60B3DS


    OCR Scan     		HGTP7N60B3D, HGT1S7N60B3D, HGT1S7N60B3DS HGT1S7N60B3D HGT1S7N60B3DS TA49190. RHRD660 TA49057) 1-800-4-HARRIS g7n60b3d G7N60B3 G7N60 igbt g7n60b3d N 407 Diode PDF

    g7n60b3d

    Abstract: igbt g7n60b3d 476 10R 931 g7n60b3 C110 HGT1S7N60B3DS HGT1S7N60B3DS9A HGTP7N60B3D RHRD660 IN8001
    Text: in t e HGTP7N60B3D, HGT1S7N60B3DS r r ii J a n u a ry . m D ata S h eet 14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode The HGTP7N60B3D and HGT1S7N60B3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have


    OCR Scan     		HGTP7N60B3D, HGT1S7N60B3DS HGTP7N60B3D HGT1S7N60B3DS TA49190. RHRD660 TA49057) g7n60b3d igbt g7n60b3d 476 10R 931 g7n60b3 C110 HGT1S7N60B3DS9A RHRD660 IN8001 PDF

    g7n60b3

    Abstract: g7N60B G7N60 C110 HGT1S7N60B3S HGTD7N60B3S HGTD7N60B3S9A HGTP7N60B3
    Text: HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3 in t e r r ii J a n u a ry . m Data Sheet 14A, 600V, UFS Series N-Channel IGBTs Features The HGTD7N60B3S, HGT1S7N60B3S and HGTP7N60B3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These


    OCR Scan     		HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3 HGT1S7N60B3S HGTP7N60B3 g7n60b3 g7N60B G7N60 C110 HGTD7N60B3S HGTD7N60B3S9A PDF

    Untitled

    Abstract: No abstract text available
    Text: HGTP7N60B3D, HGT1S7N60B3D, HGT1S7N60B3DS 14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode November 1997 Features Description • 14A, 600V, T C = 25°C The HGTP7N60B3D, HGT1S7N60B3D and HGT1S7N60B3DS are MOS gated high voltage switching devices combining


    OCR Scan     		HGTP7N60B3D, HGT1S7N60B3D, HGT1S7N60B3DS HGT1S7N60B3D TA49190. RHRD660 TA49057) 1-800-4-HARRIS PDF

    Untitled

    Abstract: No abstract text available
    Text: HGTD7N60B3, HGTD7N60B3S, HGT1S7N60B3, HGT1S7N60B3S, HGTP7N60B3 HADDIQ S E M I C O N D U C T O R 14A, 600V, UFS Series N-Channel IGBTs November 1997 Features Description • 14A, 600V, T C = 25°C The HGTD7N60B3, HGTD7N60B3S, HGT1S7N60B3, HGT1S7N60B3S and HGTP7N60B3 are MOS gated high volt­


    OCR Scan     		HGTD7N60B3, HGTD7N60B3S, HGT1S7N60B3, HGT1S7N60B3S, HGTP7N60B3 HGT1S7N60B3S HGTP7N60B3 PDF

    G7N60B3

    Abstract: g7N60B EM- 546 motor
    Text: HGTD7N60B3, HGTD7N60B3S, HGT1S7N60B3, HGT1S7N60B3S, HGTP7N60B3 HARRIS S E M I C O N D U C T O R 14A, 600V, UFS Series N-Channel IGBTs November 1997 Features Description • 14A, 600V, T C = 2 5 °C The HGTD7N60B3, HGTD7N60B3S, HGT1S7N60B3, HGT1S7N60B3S and HGTP7N60B3 are MOS gated high volt­


    OCR Scan     		HGTD7N60B3, HGTD7N60B3S, HGT1S7N60B3, HGT1S7N60B3S, HGTP7N60B3 HGT1S7N60B3S HGTP7N60B3 G7N60B3 g7N60B EM- 546 motor PDF