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    GT100DA120U Search Results

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    GT100DA120U Price and Stock

    Vishay Semiconductors VS-GT100DA120UF

    IGBT MOD 1200V 187A 890W SOT227
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    DigiKey VS-GT100DA120UF Bulk 181 1
    • 1 $40.7
    • 10 $36.262
    • 100 $31.8291
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    Vishay Semiconductors VS-GT100DA120U

    IGBT MOD 1200V 258A 893W SOT227
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    Vishay Intertechnologies VS-GT100DA120UF

    Modules IGBT - SOT-227 IGBT (Alt: VS-GT100DA120UF)
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    Avnet Americas VS-GT100DA120UF 12 Weeks 160
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    Mouser Electronics VS-GT100DA120UF 390
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    Newark VS-GT100DA120UF Bulk 103 1
    • 1 $40.7
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    TTI VS-GT100DA120UF Tube 160
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    TME VS-GT100DA120UF 1
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    Rutronik VS-GT100DA120UF Tube 90 10
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    EBV Elektronik VS-GT100DA120UF 15 Weeks 10
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    Vishay Intertechnologies VS-GT100DA120U

    Igbt Single Transistor, 258 A, 1.73 V, 893 W, 1.2 Kv, Sot-227, 4 |Vishay VS-GT100DA120U
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    Newark VS-GT100DA120U Bulk 180
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    GT100DA120U Datasheets Context Search

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    GT100DA120U

    Abstract: No abstract text available
    Text: GT100DA120U Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 100 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft reverse


    Original     		PDF GT100DA120U OT-227 E78996 2002/95/EC 18-Jul-08 GT100DA120U

    GT100DA120U

    Abstract: No abstract text available
    Text: GT100DA120U Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 100 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft reverse


    Original     		PDF GT100DA120U OT-227 E78996 2002/95/EC 11-Mar-11 GT100DA120U

    GT100DA120U

    Abstract: gt100da120 A5034 gt100 GT100DA
    Text: GT100DA120U Vishay High Power Products Insulated Gate Bipolar Transistor Trench IGBT , 100 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft reverse


    Original     		PDF GT100DA120U OT-227 2002/95/EC 18-Jul-08 GT100DA120U gt100da120 A5034 gt100 GT100DA

    vs-gt100da120u

    Abstract: No abstract text available
    Text: VS-GT100DA120U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 100 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft reverse


    Original     		PDF VS-GT100DA120U OT-227 E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 vs-gt100da120u

    GT100DA120U

    Abstract: No abstract text available
    Text: GT100DA120U Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 100 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft reverse


    Original     		PDF GT100DA120U OT-227 E78996 2002/95/EC 11-Mar-11 GT100DA120U

    GT100DA120U

    Abstract: No abstract text available
    Text: GT100DA120U Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 100 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft reverse


    Original     		PDF GT100DA120U OT-227 2002/95/EC 18-Jul-08 GT100DA120U

    GT100DA120U

    Abstract: No abstract text available
    Text: GT100DA120U Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 100 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft reverse


    Original     		PDF GT100DA120U OT-227 E78996 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 GT100DA120U