fujitsu x band amplifiers
Abstract: No abstract text available
Text: FLM2527L-20F L-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 43.0dBm Typ. High Gain: G1dB = 11.0dB (Typ.) High PAE: hadd = 38% (Typ.) Broad Band: 2.5 ~ 2.7GHz Impedance Matched Zin/Zout = 50W Hermetically Sealed Package
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FLM2527L-20F
FLM2527L-20F
FCSI0499M200
fujitsu x band amplifiers
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Untitled
Abstract: No abstract text available
Text: FLM2527L-20F L-Band Internally Matched FET FEATURES • High Output Power: P1dB = 43.0dBm Typ. • High Gain: G1dB = 11.0dB (Typ.) • High PAE: hadd = 38% (Typ.) • Broad Band: 2.5 to 2.7GHz • Impedance Matched Zin/Zout = 50ohm • Hermetically Sealed Package
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FLM2527L-20F
50ohm
FLM2527L-20F
25deg
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FLM2527L-20F
Abstract: Eudyna Devices power amplifiers Eudyna Devices X BAND power amplifiers
Text: FLM2527L-20F L-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 43.0dBm Typ. High Gain: G1dB = 11.0dB (Typ.) High PAE: ηadd = 38% (Typ.) Broad Band: 2.5 ~ 2.7GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed Package
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FLM2527L-20F
FLM2527L-20F
Volt4888
Eudyna Devices power amplifiers
Eudyna Devices X BAND power amplifiers
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PDF
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fujitsu x band amplifiers
Abstract: FLM2527L-20F
Text: FLM2527L-20F L-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 43.0dBm Typ. High Gain: G1dB = 11.0dB (Typ.) High PAE: ηadd = 38% (Typ.) Broad Band: 2.5 ~ 2.7GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed Package
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Original
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FLM2527L-20F
FLM2527L-20F
FCSI0499M200
fujitsu x band amplifiers
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PDF
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Eudyna Devices X BAND power amplifiers
Abstract: FLM2527L-20F
Text: FLM2527L-20F L-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 43.0dBm Typ. High Gain: G1dB = 11.0dB (Typ.) High PAE: ηadd = 38% (Typ.) Broad Band: 2.5 ~ 2.7GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed Package
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FLM2527L-20F
FLM2527L-20F
Volt4888
Eudyna Devices X BAND power amplifiers
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PDF
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FLM5359-8C
Abstract: FUJITSU MICROWAVE
Text: INTERNALLY MATCHED POW ER G aAs FETs C-BAND Electrical Characteristics (Ta = 2S°C) P id B TYP. (dB) G-lcfB TYP. (dB) nadd TYP. (dB) f (GHz) Vos (V) FLM2527L-20 42.5 11.0 34 2 . 5 - 2.7 FLM3742-4C 36 12.0 34 FLM3742-8C 39 11.0 FLM4450-4C 36 FLM4450-8C (rnA)
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FLM2527L-20
FLM3742-4C
FLM3742-8C
FLM4450-4C
FLM4450-8C
FLM5359-4C
FLM5359-8C
FUJITSU MICROWAVE
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LM2527
Abstract: SO 042
Text: FLM252 7L-20 Internally Matched Power GaAs F E l s ABSOLUTE MAXIMUM RATING Ambient Temperature Ta=25°C Rem Symbol Condition Rating Unit Drain-Source Voltage vds 15 V Gate-Source Voltage vgs -5 V 83.3 w °c °c Total Power Dissipation Tc = 25°C pt Storage Temperature
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FLM252
7L-20
So006
30dBrn
25dBrn
20dBrn
LM2527
SO 042
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fujitsu x band amplifiers
Abstract: No abstract text available
Text: FLM2527L-20 FUJITSU Internally Matched Power GaAs FETs FEATURES • • • • • • High Output Power: P ^ b = 42.5dBm Typ. High Gain: G ^ b = 11 dB (Typ.) High PAE: riadd = 34% (Typ.) Broad Band: 2.5 ~ 2.7GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed Package
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FLM2527L-20
FLM2527L-20
fujitsu x band amplifiers
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PDF
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Untitled
Abstract: No abstract text available
Text: FLM2527L-20F - L-Band Internally Matched FET FEATURES • High Output Power: P ^ b = 43.0dBm Typ. • • • • • High Gain: G-|dB = 11 0clB (TyP) High PAE: r!add = 38% (Typ.) Broad Band: 2.5 ~ 2.7GHz
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FLM2527L-20F
FLM2527L-20F
FCSI0499M200
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PDF
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Untitled
Abstract: No abstract text available
Text: FLM2527L-20 fujTtsu Internally M a tc h e d P o w e r G a A s F E T s FEATURES • • • • • • High Output Power: P-idg = 42.5dBm Typ. High Gain: G-j^B = 11dB (Typ.) High PAE: riar|H = 34% (Typ.) Broad Band^2.5 - 2.7GHz Impedance Matched Zin/Zout = 50Q
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FLM2527L-20
FLM2527L-20
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FLL105
Abstract: FLL55 FLL300-1 FLL300-2 FLL101 fll171 FLL200-3 "FLL105" FLL-300-1 FLK202
Text: SELECTION GRAPHS Output Power at 1dB Gain Compression dBm GaAs FETs CHIPS c o "co CO CD CL E o O ç aj CD m "D o $ o CL "3 Q. "3 O Frequency (GHz) Fufrsu Selection Graphs 1 1997 Microwave Databook SELECTION GRAPHS HEMTs 16 10 Associated Gain 12 (dB) 14 CÛ
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FLL300-1
FLL200-1
FLL300-2
FLL200-3
FLL200-2
FLL120
FLL105
FLL300-3
FLU35
FLL55
FLL105
FLL101
fll171
"FLL105"
FLL-300-1
FLK202
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FLC301XP
Abstract: FLC301XP equivalent FLK052XP Fujitsu GaAs FET application note ISS1B1 CS98E1V6R800-K41D CS98E1V6R000-K41B fujitsu "application notes" FJS-DS-158 fll171
Text: APPLICATION NOTES II. FET CHIPS A. REMOVAL OF GaAs FET AND HEMT CHIPS FROM SHIPPING CONTAINERS 1 REQUIREMENTS Anti-static work surface Grounding cable and wrist Metal tweezers or vacuum Clean container to receive Binocular microscope with strap probe transferred chips
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FMC141401-02
Abstract: fujitsu gaas marking code Fujitsu K022 FLL300-2 FLL55 FSX52WF FUJITSU L101 fujitsu x51 FLL200-2 FLL300-1
Text: APPLICATION NOTES I. PACKAGED FETS and MODULES A. HANDLING PREECAUTIONS GaAs FETS are sensitive to electrostatic discharge. Fujitsu ships all GaAs FETs in electrostatic protection packaging. User must pay careful attention to the following precautions when taking
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