Untitled
Abstract: No abstract text available
Text: DIGITRON SEMICONDUCTORS FJT1100, FJT1101 ULTRA LOW LEAKAGE DIODES IR = 1.0 pA max @ 5V (FJT1100) BV = 20 V (min) (FJT1101) MAXIMUM RATINGS Characteristics Value Storage temperature range -55° to +200°C Maximum junction operating temperature +175°C Lead temperature
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FJT1100,
FJT1101
FJT1100)
FJT1101)
FJT1100
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SSP35n03
Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A
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5KE100A
5KE100CA
5KE10A
5KE10CA
5KE110A
5KE110CA
5KE11A
5KE11CA
5KE120A
5KE120CA
SSP35n03
bc417
ksh200 equivalent
2N5457 equivalent
ss8050 equivalent
1N34 equivalent
FQP50N06 equivalent
bd139 equivalent
2N5458 equivalent
2N3563 equivalent
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FJT1100
Abstract: DO-41 package 1N4148 FJT1101 1N463 DO-41 DO-35 DO-7
Text: Discrete POWER & Signal Technologies Switching Diodes Computer Diodes Device No. Package No. Glass Package VRRM IR (V) (nA) Min Max @ VF VR (V) (V) Min @ Max IF (mA) C trr (pF) (ns) Max Max Test Cond. Process No. 1N914 DO-35 100 25 5000 20 75 1 10 4 4 (Note 2)
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1N914
DO-35
1N914A
1N914B
1N916
1N916A
FJT1100
DO-41 package 1N4148
FJT1101
1N463
DO-41 DO-35 DO-7
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1N4548
Abstract: 1N4008 Diode 1N4008 1N4008 diode 1N1744A 1n4148 1N523b 2N4418 BAX15 1n5428
Text: Discrete POWER & Signal Technologies Diode Cross-Reference Guide Industry Part Number 1N100 1N100A 1N101 1N102 1N103 1N104 1N108 1N111 1N112 1N113 1N114 1N115 1N116 1N116A 1N117 1N1170 1N117A 1N118 1N118A 1N119 1N120 1N126 1N126A 1N127 1N127A 1N128 1N128A
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1N100
1N100A
1N101
1N102
1N103
1N104
1N108
1N111
1N112
1N113
1N4548
1N4008
Diode 1N4008
1N4008 diode
1N1744A
1n4148
1N523b
2N4418
BAX15
1n5428
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FJT1100
Abstract: FJT1101 BV20
Text: FAIRCHILD SEMICONDUCTOR ~fl4 D eT| 3 4 ^ 7 4 F JT1100/FJT1101 r-« '-*f FAIRCHILD •b b ^ b b b i Ultra Low Lfeakage Diodes A Schium berger C o m p an y PACKAGES • Ir . . 1.0 pA MAX @ 5 V (FJT1100) • B V . . . 20 V (MIN) (F JT 1 100) F JT 1 1 0 0 F JT 1 1 0 1
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34tTb7
JT1100/F
JT1101
FJT1100)
FJT1101
FJT1100
FJT1101
BV20
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fjt1100
Abstract: No abstract text available
Text: FJT1100 I nternational and S em ico nducto r , I nc . FJT1101 ULTRA LOW LEAKAGE DIODES DIFFUSED SILICON PLANAR :o ABSOLUTE MAXIMUM RATINGS . f SYM BOL vR C H A R A C T E R IS T IC P e a k In ve rse V o lta g e - V „„ lo FJT 11 0 0 FJT1101 R e c tifie d
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FJT1100
FJT1101
FJT1101
DO-35
FJT1100
T00037Ô
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fjt1101
Abstract: FJT1102 1N456A 1N459A FJT1100 1N456 1N457 1N457A 1N458 1N458A
Text: Device No. • Package No. Glass Package V RRM (V) c V F (nA) Min Max @ V R (V) (V) Min @ Max 'f (mA) (PF) Process No. Max 1N456 DO-35 30 25 25 1 40 1N456A DO-35 30 25 25 1 100 1N457 DO-35 70 25 60 1 20 1N457A DO-35 70 25 60 1 100 1N458 DO-35 150 25 125
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1N456
DO-35
1N456A
1N457
1N457A
1N458
fjt1101
FJT1102
1N459A
FJT1100
1N458A
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aeg diode Si 61 L
Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books
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11tA0A12
A025A
A0290
U0U55
A0291
A0292
A0305
A0306
A0A56
A0A59
aeg diode Si 61 L
aeg diodes D6
SGS Transistors
BC23B
SILICONIX U315
MZ306
BY126
bcv59
ac128
2N3680
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Untitled
Abstract: No abstract text available
Text: Ill _ FEATURES • WIDE SUPPLY RANGE - ±15V to ±225V • PROGRAMMABLE OUTPUT CURRENT LIMIT • HIGH OUTPUT CURRENT - Up to ±200mA Continuous • LOW BIAS CURRENT - FET Input • PROTECTE D OUTPUT STAGE - Thermal Shutdown • HIGH SLEW RATE- 1000V///S
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200mA
000V///S
200mA.
150KO
FJT1101
DE104
150KQ
100pf/200V
PA85U
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1S920
Abstract: 1n4150 sot-23 BAY71 MMB0914 1N916 1N916B 1S921 D0-35 FDLL4148 FDLL4448
Text: h ô L D. • Silicon Single Junction Diodes continued bSOHBG NATL SEMICOND Vrrm (Volts) Min 100 80 75 Device VFM @ IF l«r I rrm (nA) (ns) (Volts) (mA) Max Max Max Package* 1N916 25 1.0 10 4.0 DO-35 1N916B 25 1.0 30 4.0 DO-35 (Volts) Min 75 70 DO-35 200
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bS0113G
1N916
D0-35
1N916B
DO-35
1S921
FDLL4148
LL-34*
FDLL4448
1S920
1n4150 sot-23
BAY71
MMB0914
D0-35
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1n52408
Abstract: 1N52428 zener SFC2311 78M12HM 21L02A 54175 IRS 9530 transistor 10116dc BB105G 962PC
Text: Contents Fairchild Semiconductors Ltd. Solid State Scientific Inc. Diodes Ltd. Thomson C. S. F. B Ashcroft Electronics Ltd. Sprague Electric UK Ltd. Precision Dynamic Corp. B&R Relays Schrack Relays Heller mann Electric B Foreword We are pleased to present the latest edition of the BARLEC Catalogue, which
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301PT1115
302PT1115
303PT1115
311PT1110
312PTI110
319PTI110
327PTI110
351PT1115
353PT1115
1n52408
1N52428 zener
SFC2311
78M12HM
21L02A
54175
IRS 9530 transistor
10116dc
BB105G
962PC
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FJT1
Abstract: FJT1100 1N456A FJT1102
Text: Device No. Package No. Glass Package VRRM c VF (V) (nA) Min Max @ VR (V) (V) Min @ Max •f (mA) <pF) Max Process No. 1N456 DO-35 30 25 25 1 40 1N456A DO-35 30 25 25 1 100 1N457 DO-35 70 25 60 1 20 1N457A DO-35 70 25 60 1 100 1N458 DO-35 150 25 125 1 7 1N458A
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1N456
1N456A
1N457
1N457A
1N458
1N458A
1N459
1N459A
FDH300
DO-35
FJT1
FJT1100
FJT1102
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BD1501
Abstract: No abstract text available
Text: •r r m D e v ic e M in 2S0 m 1S0 n A M ax Vfm @ k ( V o lte ) M ax (m A ) Wr Vrrm (n s ) (Vatts) P ackage* ill V RHM ( V o lts ) Diodes Silicon Single Junction Diodes D e v ic e M in M ax 150 VW @ !f (V o lte ) Max Vr (IK ) (m A ) P ackage* M ax 1 IN 4 8 6 B
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1S922
BAS20
BAX16
H300A
O-236AB
r0-236
LL-34
O-236
DO-35
BD1501
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BAS 20 SOT23
Abstract: BAW62 SOT23 1s920 3BT SOT-23 1n4376 MMBD1201 BAY71 1N916 1S921 FDLL4148
Text: Vrrm Volts Min 100 80 75 VFM @IF rr (ns) Package* (nA) (Volts) (mA) Max Max Max Ir r m Device 10 4.0 1.0 30 4.0 1.2 200 bsoiiao Düaqsoa 3t.T V RRM (Volts) Min 75 DO-35 Device ilf b fiL D . Silicon Single Junction Diodes (continued) mnscs Vm @lF 1* (ns) Package*
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1N916
DO-35
1N916B
1S921
FDLL4148
LL-34*
FDLL4448
BAS 20 SOT23
BAW62 SOT23
1s920
3BT SOT-23
1n4376
MMBD1201
BAY71
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Untitled
Abstract: No abstract text available
Text: m m sm m ¡WigÊÊmêSiM FEATURES • • • • • WIDE SUPPLY RANGE - ±15V to ±150V PROGRAMMABLE OUTPUT CURRENT LIMIT HIGH OUTPUT CURRENT - Up to ±150mA LOW BIAS CURRENT - FET Input PROTECTED OUTPUT STAGE - Thermal Shutoff APPLICATIONS • • • •
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150mA
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1N4848
Abstract: 1N4868 1N4828 1N484 1N4858 1N456 1N456A 1N457A 1N458 1N458A
Text: Diode Data NATL SEMICOND DISCRETE H E D [ f c , 5 ai l 3D GQ37QQ1 7 Low Leakage Diodes Glass Package If mA C PF Max Proc No. 1.0 40 10 D2 1.0 100 VF V VRRM V Min •r nA Max DO-35 30 25 25 1N4S6A DO-35 30 25 25 1N457 DO-35 70 25 60 1.0 20 1N457A DO-35 70
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fa501J
T-01-01
1N456
DO-35
1N456A
1N457A
1N458
1N4848
1N4868
1N4828
1N484
1N4858
1N458A
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