g995
Abstract: WPC8763 G545B2 intel g41 crb ISL6251 ISL6236 WPC8769 acer lcd inverter schematic SLG8SP512 wpc8763ldg
Text: 5 4 ISL6262A 3 2 1 VCC_CORE <VRON> PU3 D D +5VPCU +5VPCU <AC/DC Insert> FDS6690AS PQ26 FDC653N VIN PQ21 ISL6236 FDC653N PQ27 +3VPCU FDC653N PQ22 +3V_S5 <S5D> C +3VSUS <SUSD> AT814 PU1 FDC653N ADAPTER PQ29 +2.5V <MAINON> +3V <MAIND> VIN AT5206G PU2 BATTERY
|
Original
|
PDF
|
ISL6262A
FDS6690AS
FDC653N
ISL6236
FDC653N
ISL6251
AT5206G
AT814
g995
WPC8763
G545B2
intel g41 crb
WPC8769
acer lcd inverter schematic
SLG8SP512
wpc8763ldg
|
MCP67
Abstract: c4106 RSN 310 R37 ns892402 ISL6251 rtl8211b wpc8769ldg ricoh r5c833 fds8884 nvidia mcp67
Text: 5 4 3 2 1 ZO3 SYSTEM BLOCK DIAGRAM D TV-OUT +2.5V/ +1.25VM/ +1.25V/ +1.5V SMDDR_VREF/ SMDDR_VTERM VCORE ISL6262A P14 D P25 TFT LCD Panel CPU Thermal Sensor AMD S1g1 uFCPGA638 WXGA P14 P14 VGA-Core (MAX 1993) +1.2V 5V/3.3V (TPS51120) P22 P24 Turion 64 Dual-Core/
|
Original
|
PDF
|
ISL6262A)
25VM/
uFCPGA638
TPS51120)
ISL6251)
MCP67
CC-50V
10U/Y5U-10V
1U/X7R-50V
PR119
MCP67
c4106
RSN 310 R37
ns892402
ISL6251
rtl8211b
wpc8769ldg
ricoh r5c833
fds8884
nvidia mcp67
|
a1270* transistor
Abstract: 1689c hp plotter
Text: High-Frequency Transistor Primer Part III-A Thermal Resistance A Guide to Understanding, Measuring, and Applying Power FET Thermal Resistance Coefficients Table of Contents I. Introduction . 2
|
Original
|
PDF
|
5091-6489E
5968-1410E
a1270* transistor
1689c
hp plotter
|
a1270* transistor
Abstract: computer controlled infrared M113 C-15 IEEE488 diode ed 2437 AT-8141
Text: High-Frequency Transistor Primer Part III-A Thermal Resistance A Guide to Understanding, Measuring, and Applying Power FET Thermal Resistance Coefficients Table of Contents I. Introduction . 2
|
Original
|
PDF
|
R123-R181,
5091-6489E
5968-1410E
a1270* transistor
computer controlled infrared
M113
C-15
IEEE488
diode ed 2437
AT-8141
|
ns892402
Abstract: RSN 310 R37 winbond wpc8769ldg MCP67 rtl8211b C4106 MCP-67 isl6251 ricoh r5c833 WPC8769LDG
Text: 5 4 3 2 1 ZO3 SYSTEM BLOCK DIAGRAM D TV-OUT +2.5V/ +1.25VM/ +1.25V/ +1.5V SMDDR_VREF/ SMDDR_VTERM VCORE ISL6262A P14 D P25 TFT LCD Panel CPU Thermal Sensor AMD S1g1 uFCPGA638 WXGA P14 P14 Dual Channel DDR2 533/667 MHz P2,3,4,5 DDRII SO-DIMM 0 SO-DIMM 1 INT or EV
|
Original
|
PDF
|
ISL6262A)
25VM/
uFCPGA638
TPS51120)
ISL6251)
MCP67
10U/Y5U-10V
1U/X7R-50V
PR119
PR108
ns892402
RSN 310 R37
winbond wpc8769ldg
MCP67
rtl8211b
C4106
MCP-67
isl6251
ricoh r5c833
WPC8769LDG
|
ATF-44100
Abstract: ATF44100 AT8141 AT-8141 RF FET TRANSISTOR 3 GHZ tray 4.9 6.0
Text: HEW LETT-PACKARD/ HEW LETT mPPm PA C K A R D CUPNTS b lE D • 4 4 1 * 75 0 * 4 □ D O T R S D ATF-44100 {AT-8141 2-8 GHz Medium Power Gallium Arsenide FET Features • • • 751 Chip Outline High Output Power: 32.0 dBm typical Pi <j b at 4 GHz High Gain at 1 dB Compression:
|
OCR Scan
|
PDF
|
MMl47SÃ
ATF-44100
AT-8141)
ATF-44100
ATF44100
AT8141
AT-8141
RF FET TRANSISTOR 3 GHZ
tray 4.9 6.0
|
Untitled
Abstract: No abstract text available
Text: ATF-44100 AT-8141 2-8 GHz Medium Power Gallium Arsenide FET Wfijm HEWLETT mLfim PACKARD Chip Outline Features • • • High Output Power: 32.0 dBm typical Pi dBat 4 GHz High Gain at 1 dB Compression: 9.0 dB typical Gi dB at 4 GHz High Power Efficiency:
|
OCR Scan
|
PDF
|
ATF-44100
AT-8141)
ATF-44100
|
AT-8140
Abstract: No abstract text available
Text: ATF-44101 AT-8140 2-8 GHz Medium Power Gallium Arsenide FET What HEWLETT münÆPACKARD Features • • • • 100 mil Flange High Output Power: 32.0 dBm typical Pi dB at 4 GHz High Gain at 1 dB Compression: 9.0 dB typical Gi dB at 4 GHz High Power Efficiency:
|
OCR Scan
|
PDF
|
ATF-44101
AT-8140)
ATF-44101
AT-8140
|
AT-8140
Abstract: AVANTEK transistor
Text: AVANTEK GOObSfli =1 • INC 0A Y A N T E K ATF-44101 AT-8140 2-8 GHz Medium Power Gallium Arsenide FET ■ Tv2>l-'2-5 Avantek 100 mil Flange Features • • • • .05 High Output Power: 32.0 dBm typical Pi dB at 4 GHz High Gain at 1 dB Compression: 9.0 dB typical Gi dB at 4 GHz
|
OCR Scan
|
PDF
|
ATF-44101
AT-8140)
F-44101
AT-8140
AVANTEK transistor
|
HRMA-0470B
Abstract: Semicon volume 1 HPMA-2085 HP 33002A AVANTEK ATF26884 SJ 2036 HPMA-0470TXV HPMA-0485 HPMA-0370 DIODE GOC 61
Text: Whal HEWLETT \HrJk PACKARD Communications Components Designer’s Catalog, GaAs and Silicon Products A Brief Sketch Hewlett-Packard is one of the world’s leading designers and manufacturers of RF and microwave semiconductors, optoelectronic, and fiber optic
|
OCR Scan
|
PDF
|
E-28230
S-164
CH-8902
HRMA-0470B
Semicon volume 1
HPMA-2085
HP 33002A
AVANTEK ATF26884
SJ 2036
HPMA-0470TXV
HPMA-0485
HPMA-0370
DIODE GOC 61
|
AVANTEK transistor
Abstract: No abstract text available
Text: A V A N T E K INC 20E D • HMlTbb ODGbSfl? S ■ ATF-44100 AT-8141 2-8 GHz Medium Power Gallium Arsenide FET T-3I-2S Avantek Chip Outline Features • • • High Output Power: 32.0 dBm typical Pi da at 4 GHz High Gain at 1 dB Compression: 9.0 dB typical Gi dB at 4 GHz
|
OCR Scan
|
PDF
|
ATF-44100
AT-8141)
AVANTEK transistor
|
4MM75
Abstract: No abstract text available
Text: HEWLETT-PACKARD/ V Z ' I H EW LETT ifflJ P A C K A R D CMPNTS blE D • 4 4 4 7 5 Ô 4 UGOTRSO ATF-44100 AT-8141 2-8 ^Hz Medium Power Gallium Arsenide FET Features 751 Chip Outline • High Output Power: 32.0 dBm typical Pi dB at 4 GHz • High Gain at 1 dB Compression:
|
OCR Scan
|
PDF
|
ATF-44100
AT-8141)
ATF-44100
4MM75
|
AT-8140
Abstract: ATF-44101 Avantek S AVANTEK transistor AT8140
Text: HOE D A V A N T E K INC AVAN TEK Hi l i m i t h QOGbSô'î ATF-44101 AT-8140 2-8 GHz Medium Power Gallium Arsenide FET • ' ' ^ T~-3>l-2 S Avantek 100 mil Flange Features • • • • .05 High Output Power: 32.0 dBm typical Pi dB at 4 GHz High Gain at 1 dB Compression:
|
OCR Scan
|
PDF
|
ATF-44101
AT-8140)
ATF-44101
AT-8140
Avantek S
AVANTEK transistor
AT8140
|
