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    DH50037 Search Results

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    DH50037 Price and Stock

    Chelton Telecom and Microwave DH50037-85NT1

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    Bristol Electronics DH50037-85NT1 853
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    Quest Components DH50037-85NT1 682
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    DH50037 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    DH50037 Temex MICROWAVE SILICON COMPONENTS Original PDF

    DH50037 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: SILICON PIN DIODES Microwave applications ULTRAFAST SWITCHING SILICON PIN DIODES Description For ultrafast switching, these passivated mesa diodes have a thin I layer < 10 µm . Electrical characteristics CHIP AND PACKAGED DIODES CHIP DIODES Characteristics Gold Breakdown Junction


    Original     		EH50072 EH50073 EH50074 EH50075 EH50076 EH50077 EH50101 EH50102 EH50103 EH50104 PDF

    EH76150 die

    Abstract: DH252 DH256 all diodes ratings step recovery diode dh252 temex dh292 DH315 DH303 DH324 DH312
    Text: SILICON MICROWAVE DIODES Step Recovery Diodes MICROWAVE SILICON MICROWAVE DIODES STEP RECOVERY DIODES All the detail specification shall be read in conjunction with ESA/SCC Generic Specification N° 5010, the special requirements are included in the detail specification.


    Original     		ESA/SCC5512/016 DH252 DH256 DH292 DH267 ESA/SCC5512/016 EH76150 die DH252 DH256 all diodes ratings step recovery diode dh252 temex dh292 DH315 DH303 DH324 DH312 PDF

    dh50076

    Abstract: EH50052 M208
    Text: SILICON PIN DIODES Microwave applications ULTRAFAST SWITCHING SILICON PIN DIODES Description For ultrafast switching, these passivated mesa diodes have a thin I layer < 10 µm . Electrical characteristics CHIP AND PACKAGED DIODES CHIP DIODES Characteristics Gold Breakdown Junction


    Original     		EH50033 EH50034 EH50035 EH50036 EH50037 EH50052 EH50053 EH50054 EH50055 EH50056 dh50076 M208 PDF

    dh50076

    Abstract: DH50037 M208
    Text: SILICON PIN DIODES Microwave applications Ultrafast switching silicon PIN diodes Description For ultrafast switching, these passivated mesa diodes have a thin I layer < 10 µm . Electrical characteristics CHIP AND PACKAGED DIODES CHIP DIODES Characteristics Gold Breakdown Junction


    Original     		EH50033 EH50034 EH50035 EH50036 EH50037 EH50052 EH50053 EH50054 EH50055 EH50056 dh50076 DH50037 M208 PDF

    sqm1150

    Abstract: smd diode f54 sqm1250 DH60034 srd dh294 bh16 transistor step recovery diode dh252 temex DH252 M208 B1 DH294
    Text: MICROWAVE SILICON COMPONENTS Contents MICROWAVE SILICON COMPONENTS CONTENTS CONTENTS w e N f o t i y Spir nolog Tech PAGE INTRODUCTION / SYMBOLS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12-2 All specifications contained in that catalog are subject to change without notice.


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Surface M o u n t sw itch ing and attenuator Silicon PIN diodes Switch application Characteristics @ Ta=+25° C O F= 120MHz Q max II conditions Type DH50037 DH50051 DH50058 DH50053 DH50103 DH50109 DH50203 DH50209 DH80051 V min. 30 35 35 50 100 100 200 200


    OCR Scan     		DH50037 DH50051 DH50058 DH50053 DH50103 DH50109 DH50203 DH50209 DH80051 120MHz PDF