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    DE375 Price and Stock

    Siemens 6SL32230DE375BA0 (ALTERNATE: 6SL32230DE375BA0)

    SINAMICS PM230-IP55-FSF-B-400V 75KW ; 6SL32230DE375BA0 | Siemens 6SL32230DE375BA0
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    RS 6SL32230DE375BA0 (ALTERNATE: 6SL32230DE375BA0) Bulk 2 Weeks 1
    • 1 $18059.61
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    Vishay BLH GL41D-E3/75

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics GL41D-E3/75 1,500 9
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    GSI Technology GL41D-E3/75

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    Bristol Electronics GL41D-E3/75 515 9
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    IXYS Corporation DE375501N21A

    RF POWER MOSFET RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA DE375501N21A 24
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    IXYS Integrated Circuits Division DE375-102N10A

    MOSFET DIS.10A 1000V N-CH DE ENHANCEMENT SMT
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    Ozdisan Elektronik DE375-102N10A
    • 1 $45.40641
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    DE375 Datasheets (17)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    DE-375 Directed Energy DE-SERIES FAST POWER MOSFET Original PDF
    DE375 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    DE-375-102N10 Directed Energy DE-SERIES FAST POWER MOSFETS Scan PDF
    DE375-102N10A Directed Energy RF Power MOSFET Original PDF
    DE375-102N10A IXYS TRANS MOSFET N-CH 1000V 10A 6DE 375 Original PDF
    DE-375-102N11-00 Directed Energy DE-SERIES FAST POWER MOSFETS Scan PDF
    DE375-102N11-00 Directed Energy DE-SERIES FAST POWER MOSFETS Scan PDF
    DE375-102N12A Directed Energy RF Power MOSFET Original PDF
    DE375-102N12A IXYS TRANS MOSFET N-CH 1000V 12A 6DE 375 Original PDF
    DE375-102N30-00 Directed Energy DE-SERIES FAST POWER MOSFETS Scan PDF
    DE-375-301N35 Directed Energy DE-SERIES FAST POWER MOSFETS Scan PDF
    DE-375-301N35-00 Directed Energy DE-SERIES FAST POWER MOSFETS Scan PDF
    DE375-302N40-00 Directed Energy DE-SERIES FAST POWER MOSFETS Scan PDF
    DE-375-501N21 Directed Energy DE-SERIES FAST POWER MOSFETS Scan PDF
    DE-375-501N21-00 Directed Energy DE-SERIES FAST POWER MOSFETS Scan PDF
    DE375-501N21A Directed Energy RF Power MOSFET Original PDF
    DE375-501N21A IXYS TRANS MOSFET N-CH 500V 25A 6DE 375 Original PDF

    DE375 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    nec 2401

    Abstract: 400P DE375-102N10A Directed Energy
    Text: Directed Energy, Inc. An DE375-102N10A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR


    Original     		PDF DE375-102N10A nec 2401 400P DE375-102N10A Directed Energy

    DE375-501N21A

    Abstract: "RF MOSFETs" 400P
    Text: DE375-501N21A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 50MHz Maximum Frequency Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF DE375-501N21A 50MHz DE375-501N21A "RF MOSFETs" 400P

    102N12

    Abstract: Directed Energy Directed 400P DE375-102N12A
    Text: Directed Energy, Inc. An ♦ ♦ ♦ ♦ ♦ DE375-102N12A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 50MHz Maximum Frequency Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF DE375-102N12A 50MHz 102N12 Directed Energy Directed 400P DE375-102N12A

    DE375-102N10A

    Abstract: No abstract text available
    Text: Directed Energy, Inc. An DE375-102N10A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000


    Original     		PDF DE375-102N10A DE375-102N10A

    13.56MHZ 3KW GENERATOR

    Abstract: 3KW GENERATOR mosfet 5kw high power rf 5kw switching power supply design HIGH FREQUENCY 5kw power Transformer circuit diagram of 13.56MHz RF Generator mosfet 3kw 3kW AND 5kW HALF-BRIDGE CLASS-D RF GENERATORS 3kw mosfet equivalent circuit of power transformer 11kv
    Text: DIRECTED ENERGY, INC. TECHNICAL NOTE 3kW AND 5kW HALF-BRIDGE CLASS-D RF GENERATORS AT 13.56MHz WITH 89% EFFICENCY AND LIMITED FREQUENCY AGILITY Abstract DEI / IXYS has developed an RF generator design for very high power at a ISM frequency. of 13.56MHz, using a pair of DE375-102N12A


    Original     		PDF 56MHz 56MHz, DE375-102N12A DEIC420 DE375-102N12A 0-471-03018-X 13.56MHZ 3KW GENERATOR 3KW GENERATOR mosfet 5kw high power rf 5kw switching power supply design HIGH FREQUENCY 5kw power Transformer circuit diagram of 13.56MHz RF Generator mosfet 3kw 3kW AND 5kW HALF-BRIDGE CLASS-D RF GENERATORS 3kw mosfet equivalent circuit of power transformer 11kv

    nec 2401

    Abstract: DE375-102N10A "RF MOSFETs" 400P
    Text: DE375-102N10A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient


    Original     		PDF DE375-102N10A nec 2401 DE375-102N10A "RF MOSFETs" 400P

    DE375-102N12A

    Abstract: 400P
    Text: DE375-102N12A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 50MHz Maximum Frequency Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF DE375-102N12A 50MHz DE375-102N12A 400P

    DE375-102N12A

    Abstract: PIN diode SPICE model 400P 102N12A
    Text: DE375-102N12A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 50MHz Maximum Frequency Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous


    Original     		PDF DE375-102N12A 50MHz 2N12A DE375-102N12A PIN diode SPICE model 400P 102N12A

    DE275-102N06A

    Abstract: DE375-102N10A DE375-501N16A
    Text: RF Power MOSFETs VDSS ID25 RDS on max V 500 TC = 25 °C A 16 Ω 0.5 DE375-501N16A 1000 6 2.0 DE275-102N06A 10 1.2 DE375-102N10A Part Number Note: These part types are available from Directed Energy, Inc.


    Original     		PDF DE375-501N16A DE275-102N06A DE375-102N10A DE275-102N06A DE375-102N10A DE375-501N16A

    400P

    Abstract: DE375-501N21A mosfet SPICE MODEL
    Text: Directed Energy, Inc. An ♦ ♦ ♦ ♦ ♦ DE375-501N21A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 50MHz Maximum Frequency Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF DE375-501N21A 50MHz 400P DE375-501N21A mosfet SPICE MODEL

    DE375-0001

    Abstract: DE375-102N10A nec 2401 400P DE-375-102N10
    Text: DE375-102N10A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Ideal for Class C, D, & E Applications Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000


    Original     		PDF DE375-102N10A DE375-0001 DE375-102N10A nec 2401 400P DE-375-102N10

    DE375-501N21A

    Abstract: 400P PIN diode SPICE model
    Text: DE375-501N21A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 50MHz Maximum Frequency Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF DE375-501N21A 50MHz DE375-501N21A 400P PIN diode SPICE model

    DE375-501N16A

    Abstract: No abstract text available
    Text: Directed Energy, Inc. An DE375-501N16A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Symbol Test Conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500


    Original     		PDF DE375-501N16A DE375-501N16A

    IXZ4DF12N100

    Abstract: DEIC515 500w mosfet power amplifier circuit diagram POWER MOSFET Rise Time 1 ns circuit diagram of smps 500w RF POWER MOSFET deic 515 rf mosfet power amplifier DEIC-515 RF Amplifier 500w 175 mhz
    Text: IXZ4DF12N100 RF Power MOSFET & DRIVER Driver / MOSFET Combination DEIC-515 Driver combined with a DE375-102N12A MOSFET Gate driver matched to MOSFET Features • Isolated Substrate − high isolation voltage >2500V − excellent thermal transfer − Increased temperature and power cycling capability


    Original     		PDF IXZ4DF12N100 DEIC-515 DE375-102N12A 1000lvin IXZ4DF12N100 DEIC515 500w mosfet power amplifier circuit diagram POWER MOSFET Rise Time 1 ns circuit diagram of smps 500w RF POWER MOSFET deic 515 rf mosfet power amplifier RF Amplifier 500w 175 mhz

    Directed Energy

    Abstract: 501N21 DE-375
    Text: PRELIMINARY SPECIFICATIONS DE-375 501N21 21A, 500V, .25Ω US Patents 4891686, 5640045 Foreign Patents Pending 04/1999 Directed Energy, Incorporated 2401 Research Blvd, Suite 108 Fort Collins, CO USA 80526 (970) 493-1901 FAX (970) 493-1903 INTERNET www.dirnrg.com


    Original     		PDF DE-375 501N21 150oC Directed Energy 501N21

    DE-375-102N10

    Abstract: 102N10 DE-375
    Text: PRELIMINARY SPECIFICATIONS DE-375 102N10 10A, 1000V, 1.2Ω US Patents 4891686, 5640045 Foreign Patents Pending 04/1999 Directed Energy, Incorporated 2401 Research Blvd, Suite 108 Fort Collins, CO USA 80526 (970) 493-1901 FAX (970) 493-1903 INTERNET www.dirnrg.com


    Original     		PDF DE-375 102N10 150oC DE-375-102N10 102N10

    Untitled

    Abstract: No abstract text available
    Text: 1 1 11 1 2341 567891 SA2336-E 1 1234567895A3 ◆ 66E39948ED79DE37543794834 ◆  B845D7434CEB374B824D4DE345FEE3784 ◆4 BC34B3B74D734 ◆4 75D9FD8B74 39B74!4"BB56734 39B74 ◆ #


    Original     		PDF SA2336-E 1234567895A3 39948ED79 DE375 B8242B 2423D84CB99B D8B674 3E8B39 B845D74 34CEB

    Untitled

    Abstract: No abstract text available
    Text: 1 1 11 1 2341 567891 SY2336-HA 1 1234567895A3 ◆ 66E39948ED79DE37543794834 ◆  B845D7434CEB374B824D4DE345FEE3784 ◆4 BC34B3B74D734 ◆ 75D9FD8B74 39B74!4"BB56734 39B74 ◆ #


    Original     		PDF SY2336-HA 1234567895A3 39948ED79 DE375 B8242B 2423D84CB99B D8B674 3E8B39 B845D74 34CEB

    bc 657

    Abstract: No abstract text available
    Text: 1 1 11 1 2341 567891 SSB2336E-G 1 1234567895A3 ◆ 66E39948ED79DE37543794834 ◆  B845D7434CEB374B824D4DE345FEE3784 ◆4 BC34B3B74D734 ◆4 75D9FD8B74 39B74!4"BB56734 39B74 ◆ #


    Original     		PDF SSB2336E-G 1234567895A3 39948ED79 DE375 B8242B 2423D84CB99B D8B674 3E8B39 B845D74 34CEB bc 657

    Untitled

    Abstract: No abstract text available
    Text: 1 1 11 1 2341 567891 SM2336-L 1 1234567895A3 ◆ 66E39948ED79DE37543794834 ◆  B845D7434CEB374B824D4DE345FEE3784 ◆4 BC34B3B74D734 ◆4 75D9FD8B74 39B74!4"BB56734 39B74 ◆ #


    Original     		PDF SM2336-L 1234567895A3 39948ED79 DE375 B8242B 2423D84CB99B D8B674 3E8B39 B845D74 34CEB

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor

    DE-Series

    Abstract: mosfet High-Speed Switching 100mhz Directed Energy DE-150 DE-275 DE-375
    Text: DIRECTED ENERGY, INC. TECHNICAL NOTE DE-SERIES FAST POWER MOSFET AN INTRODUCTION George J Krausse, Directed Energy, Inc. Abstract The DE-SERIES Fast Power TM MOSFETs are unique high power devices designed as a circuit element from the ground up for high speed, high


    Original     		PDF

    mospower applications handbook

    Abstract: MOSFET power inverter 600W circuit diagram HEXFET Power MOSFET designer manual Rudy Severns "mospower applications handbook" 02N05 Siliconix Handbook 501n04 MOSFET designer manual Gate Drive Characteristics
    Text: DIRECTED ENERGY INC 204^=55 50E D D 0 D 01 13 473 • DIRE DE-SERIES MOSFETS m m M m INTRODUCTION TO THE DE-SERIES E -M SYM M ETRY - E LE C TR IC AL ADVANTAGES THERM AL M E C H A N IC A L ADVANTAGES GATE DR IVE CIRCU ITR Y Directed Energy, Inc. 2301 Research Blvd., Ste. 101


    OCR Scan     		PDF 00D0113 and01N 201P11-00* 101N30-00 P12-00* DE-375 -59S-- 102N11-00 501N21-00 mospower applications handbook MOSFET power inverter 600W circuit diagram HEXFET Power MOSFET designer manual Rudy Severns "mospower applications handbook" 02N05 Siliconix Handbook 501n04 MOSFET designer manual Gate Drive Characteristics

    LR0500

    Abstract: "Amplifier Research" TC3020A TC1510A TC3020 TC1510
    Text: Extended-bandwidth TEM cells . . Models TC1510A and TC3020A • Frequencies up to 750 MHz ■ Cable-access panel permits insertion of I/O cables for normal operation of test item without breaching the main doors ■ Gasketing of doors and seams minimizes field leakage


    OCR Scan     		PDF TC1510A TC3020A LR0500 "Amplifier Research" TC3020A TC3020 TC1510