DD-37
Abstract: No abstract text available
Text: b2E » • bM27525 N E c ELEcmmcs / DD37MÖÜ 2 bT « N E C E INC - W S E R DIODE NDL5083 1 310 nm OPTICAL FIBER COMMUNICATIONS InGaAsP DOUBLE HETEROSTRUCTURE LASER DIODE D E SC RIPTIO N N D L 5 0 8 3 is a 1 3 1 0 nm laser diode especially designed fo r optica l data com m unications. The Mesa-type DC-PBH Double
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bM27525
DD37MÖ
NDL5083
b427525
Q037462
DD-37
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T0204AA
Abstract: No abstract text available
Text: IRF640 IRF641 IRF642 IRF340 IRFP340 IRF341 IRFP341 IRF740 IRF741 IRF742 IRF743 IRFP440 IRF441 60 1600 750 300 E2 10 60 1600 750 300 E2 0.22 10 60 1600 750 300 E2 0.25 0.22 10 60 1600 750 300 E2 4 0.25 0.55 5 60 1600 450 150 E3 2 4 0.25 0.55 5 60 1600 450 150
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IRF640
IRF641
IRF642
IRF643
IRF340
IRFP340
IRF341
IRFP341
O-220
T0204AA
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Untitled
Abstract: No abstract text available
Text: b2E D • bM27SES 0037»n 0 ID^ WNECE_ N E C ELECTRONICS INC SER DIODE MODULE / N D L 5 7 0 7 P 1 3 0 0 nm OPTICAL FIBER C O M M U N IC A TIO N S InGaAsP DC-PBH LASER DIODE MODULE D E SC RIPTIO N N D L5707P is a 1 300 nm laser diode DIP m odule w ith m u ltim o d e fib e r and internal therm o-electric cooler. It is designed fo r a
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bM27SES
L5707P
b42752S
NDL5707P
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KM48S8030AT
Abstract: KM48S KMM366S1623AT KMM366S1623AT-G0 KMM366S1623AT-G2 KMM366S1623AT-G8
Text: NEW JEDEC SDRAM MODULE KMM366S1623AT KMM366S1623AT SDRAM DIMM 16Mx64 SDRAM DIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S1623AT is a 16M bit x 64 Synchronous - Performance range Dynamic RAM high density memory module. The Samsung
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KMM366S1623AT
KMM366S1623AT
16Mx64
400mil
168-pin
0D374b4
KM48S8030AT
KM48S
KMM366S1623AT-G0
KMM366S1623AT-G2
KMM366S1623AT-G8
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