1N3155
Abstract: 1N9351 AMERICAN POWER DEVICES 1N938
Text: AMERICAN POWER DEVICES 23E D • D73713S 0000020 S • T ^ T F O T T C Z E N E R DIODES DO-7 Case 250 mW, TC DO-7 Case Typet Nominal Zener Voltage V+ V Z t «- i o 1N4775 1N4775A 1N4776 1N4776A 1N4777 1N4777A 1N4778 1N4778A 1N4779 1N4779A 1N4780 1N4780A 1N4781
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D73713S
DO-35
00DD115
1N3155
1N9351
AMERICAN POWER DEVICES 1N938
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B0239A
Abstract: No abstract text available
Text: AMERICAN POWER DEVICES 23E D • D73713S 0000020 S • T ^ T F O T T C Z E N E R DIODES DO-7 Case 250 mW, TC DO-7 Case Typet Nominal Zener Voltage V+ V Z t «- i o 1N4775 1N4775A 1N4776 1N4776A 1N4777 1N4777A 1N4778 1N4778A 1N4779 1N4779A 1N4780 1N4780A 1N4781
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D73713S
DO-35
3713S
B0239A
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IN942
Abstract: itt is 2.5-400 1N3156 1N3155 ITT GUIDE diode zener ITT zener diode AMERICAN POWER DEVICES 1N938
Text: AMERICAN POWER DEVICES S3E D 0737135 00000S1 7 T C Z E N E R DIODES 400 mW & 500 mW, TC Type Zener Voltage Test MIn. Max. Current ITT 1N940 1N940A 1N940B V V 8.55 9.45 mA 7.5 tZener impedance is derived from the 1kHz supenmposed on the test current. DO-7 Case
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00000S1
DO-35
00DD115
IN942
itt is 2.5-400
1N3156
1N3155
ITT GUIDE diode zener
ITT zener diode
AMERICAN POWER DEVICES 1N938
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BZX75C
Abstract: BZ102 diode 1n816 diode BZX75C1V4 G129 stabistor 1N816 BZX75-C2V1 AP2361 BZX75C-1V4 BZ102 1V4
Text: AMERICAN POWER DEVICES •73713S DODODSM S 23E D STABISTORS DO-35 Case DO-35 Case Type LEAD DIA NOT CONTROLLED THIS ZONE Voltage VR V 3d Stabistors are diffused silicon diodes with controlled forward voltage characteristics. They are offered with reference
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73713S
DO-35
DO-35
800nsec,
BZX75C
BZ102 diode
1n816 diode
BZX75C1V4
G129 stabistor
1N816
BZX75-C2V1
AP2361
BZX75C-1V4
BZ102 1V4
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BZ102 diode
Abstract: TRANSISTOR C 6090 BZX75C1V4 BZ102 BZX75C2V1 DIODE BZX75c3v6 BZX75C3V6 1N816 BZX75C-1V4 BZX75-C1V4
Text: AMERICAN POWER DEVICES SRE ». • 1N816 ,1 N3896, AP3897 - AP3898 AP4829 - AP4830, BZ102/0V7 - BZ102/3V4 BZX75C1V4 - BZX75C3V6, G129 - G130 STB-567 - STB-569, AP2360 - AP2361 american SEM ICO N D U C TO R S D73713S QQODOb? SSS ■ APD power devices, inc.
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D73713S
1N816
1N3896,
AP3897
AP3898
AP4829
AP4830,
BZ102/0V7
BZ102/3V4
BZX75C1V4
BZ102 diode
TRANSISTOR C 6090
BZ102
BZX75C2V1
DIODE BZX75c3v6
BZX75C3V6
BZX75C-1V4
BZX75-C1V4
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of zener diode 4744
Abstract: zener diode 4742 zener 4733 4735 zener zener 4744 Zener Diode 4734 ALL4731 ALL4730 ALL4728 B10 zener diode
Text: AMERICAN POWER DEVICES 53E D • D73713S OGDOGB1 T ■ ZENER DIODES MELF PACKAGED T -U -/3 R, ; [j|r _ I Voltage Regulator 1W LL41 ELECTRICAL CHARACTERISTICS T y p et i N om inal Z ener V oltage Tact ICol PurrAnt vUI 1v i 11 Maximum^ D ynam ic Im pedance
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073713S
474ALL
of zener diode 4744
zener diode 4742
zener 4733
4735 zener
zener 4744
Zener Diode 4734
ALL4731
ALL4730
ALL4728
B10 zener diode
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D73713S
Abstract: trigger diode
Text: 53E D AMERICAN POWER DEVICES D73713S QOOQOlö 7 CHIPS OTHER A.P.D. CHIPS 100 Volt Zener Chip oTo~^ Test Current 100V ± 1 0 % 1mA Leakage at 80V. 10 iA max. Forward at 10mA Temperature Coefficient 1Vmax ,1% /°C Trigger Diode ¡llaraí-.?'•,y o Nominal Zener Voltage
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D73713S
50/iA
100nA
trigger diode
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4E20-28
Abstract: 1N3935 FIRING squib AMERICAN POWER DEVICES 4E50M-28 4E20M8 4E20-8 4E20
Text: 53E D AMERICAN POWER DEVICES • D73713S Q000Q25 4 .■ 5 FOUR-LAYER DIODES “ — - — - - i I DO-7/DO-35 Case Type Switching Voltage Vs ± V @ 25°C v 4t?20-3 4E20-M-3 4E20-8 4E20-M-8 4E20-28 20±4 20±4 20±4 20 ± 4 20±4 4E20-M-28
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D73713S
Q000Q25
DO-7/DO-35
4E20-M-3
4E20-8
4E20-M-8
4E20-28
4E20-M-28
4E30-3
4E30-M-3
1N3935
FIRING squib
AMERICAN POWER DEVICES
4E50M-28
4E20M8
4E20
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Untitled
Abstract: No abstract text available
Text: SURFACE MOUNT ZENERS 350m W Zener Voltage Dynamic Impedance @ 'z r @ 'Z T Test Current VzOO Z z t ö Ic t ( iiiA) Part# MMBZ5250B MMBZ5251B MMBZ5252B MMBZ5254B MMBZ5256B MMBZ5257B MMBZ5258B MMBZ5259B MMBZ5260B MMBZ5261B MMBZ5262B MMBZ5223B MMBZ5225B MMBZ5226B
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MMBZ5250B
MMBZ5251B
MMBZ5252B
MMBZ5254B
MMBZ5256B
MMBZ5257B
MMBZ5258B
MMBZ5259B
MMBZ5260B
MMBZ5261B
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D73713S
Abstract: No abstract text available
Text: STE » A M E R I C A N PO WE R D E V I CE S & 0 7 3 7 1 3 5 0 0 0 0 0 6 3 7TS • APD ICTE5 - ICTE45 american S E M IC O N D U C T O R S power devices, inc. 1500 W silicon voltage transient suppressors MECHANICAL CHARACTERISTICS FEATURES MAXIMUM RATINGS •
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ICTE45
D73713S
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