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    BZX75C1V4 Search Results

    BZX75C1V4 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BZX75-C1V4 Philips Semiconductors Stabistors Original PDF
    BZX75C1V4 APD Semiconductor STABISTORS DO-35 Case Scan PDF
    BZX75/C1V4 Unknown Cross Reference Datasheet Scan PDF
    BZX75C1V4 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    BZX75-C1V4 Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF

    BZX75C1V4 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    1N48 diode

    Abstract: 1N4156 BZX75C1V4 BZX75C3V6 BZX75-C2V1 BZX75C-1V4 BZ102 diode 1N48 MPD200 1N816
    Text: AMERICAN POWER 0737135 D DEVICES american SEMICONDUCTORS p o w e r devices, 4 .T «APD 1N4156,1N4157 1N4829,1N4830 1N5179 MPD200, MPD300, MPD400 inc. Stabistor diodes — high speed, multi-pellet, ultra low leakage FEATURES MAXIMUM RATINGS • • • •


    Original
    1N4156 1N4157 1N4829 1N4830 1N5179 MPD200, MPD300, MPD400 DO-35 400mW 1N48 diode BZX75C1V4 BZX75C3V6 BZX75-C2V1 BZX75C-1V4 BZ102 diode 1N48 MPD200 1N816 PDF

    PA0016

    Abstract: STR11006 SO41P PIONEER PA0016 7 segment to bcd converter 74c915 SAJ141 74HC145 tms1122 IC PA0016 KOR 2310 transistor
    Text: Utgåva 2005-03-24 Alla artiklar i katalogen finns normalt i lager men det tillkommer och utgår kontinuerligt. För aktuell information om prisvärt industriöverskott / surplus surfa in på: http://www.labb.se/surplus.htm Tel: 08-641 86 30 Fax: 08-641 87 30


    Original
    14-dagar PA0016 STR11006 SO41P PIONEER PA0016 7 segment to bcd converter 74c915 SAJ141 74HC145 tms1122 IC PA0016 KOR 2310 transistor PDF

    BZX75C

    Abstract: BZ102 diode 1n816 diode BZX75C1V4 G129 stabistor 1N816 BZX75-C2V1 AP2361 BZX75C-1V4 BZ102 1V4
    Text: AMERICAN POWER DEVICES •73713S DODODSM S 23E D STABISTORS DO-35 Case DO-35 Case Type LEAD DIA NOT CONTROLLED THIS ZONE Voltage VR V 3d Stabistors are diffused silicon diodes with controlled forward voltage characteristics. They are offered with reference


    Original
    73713S DO-35 DO-35 800nsec, BZX75C BZ102 diode 1n816 diode BZX75C1V4 G129 stabistor 1N816 BZX75-C2V1 AP2361 BZX75C-1V4 BZ102 1V4 PDF

    BZ102 diode

    Abstract: TRANSISTOR C 6090 BZX75C1V4 BZ102 BZX75C2V1 DIODE BZX75c3v6 BZX75C3V6 1N816 BZX75C-1V4 BZX75-C1V4
    Text: AMERICAN POWER DEVICES SRE ». • 1N816 ,1 N3896, AP3897 - AP3898 AP4829 - AP4830, BZ102/0V7 - BZ102/3V4 BZX75C1V4 - BZX75C3V6, G129 - G130 STB-567 - STB-569, AP2360 - AP2361 american SEM ICO N D U C TO R S D73713S QQODOb? SSS ■ APD power devices, inc.


    OCR Scan
    D73713S 1N816 1N3896, AP3897 AP3898 AP4829 AP4830, BZ102/0V7 BZ102/3V4 BZX75C1V4 BZ102 diode TRANSISTOR C 6090 BZ102 BZX75C2V1 DIODE BZX75c3v6 BZX75C3V6 BZX75C-1V4 BZX75-C1V4 PDF

    BZX75C2V1

    Abstract: BZX75C1V4 1N3896 BZ102 BZX75-C3V6 BZX75C2V8 BZX75C 1N816 bzx75c3v6 STB568
    Text: STABISTORS Part# 1N 8 16 1N3896 1N3897 1N3898 1N4829 1N4830 BZ102/0V7 BZ102/1V4 BZ102/2V1 BZ102/2V8 BZ102/3V4 BZX75C1V4 BZX75C2V1 BZX75C2V8 BZX75C3V6 Voltage Tolerance M a x . Leakage Current Test Current v„W 5% ±V l„«10V(m A) Mm») .704 .775 1.500


    OCR Scan
    1N816 1N3896 1N3897 1N3898 1N4829 1N4830 BZ102/0V7 BZ102/1V4 BZ102/2V1 BZ102/2V8 BZX75C2V1 BZX75C1V4 1N3896 BZ102 BZX75-C3V6 BZX75C2V8 BZX75C 1N816 bzx75c3v6 STB568 PDF

    BZX75C2V8

    Abstract: 1N816 BZX75C2V1 bzx75c1v4 AP4157 BZX75-C2V1 STB568 AP4830 BZX75-C2V8 G129 stabistor
    Text: ÖB FENUAL ELECTRONICS/APD 3Ef 3 S m S t B I ' r- ODD DT 2-1 1 il- * 1 STABISTORS DO-35 Case DO-35 Case Type 1N816 1N3896 AP3897 AP3898 AP4829 Stabistors are diffused silicon diodes with controlled forward voltage charac­ teristics. They are offered with reference


    OCR Scan
    DO-35 CurrentSTB-569 APD200 APD300 APD400 AP4156 BZX75C2V8 1N816 BZX75C2V1 bzx75c1v4 AP4157 BZX75-C2V1 STB568 AP4830 BZX75-C2V8 G129 stabistor PDF

    bzx75c2v8

    Abstract: BZX75C3V6
    Text: 2SE D N AMER PHILIPS/DISCRETE • bb53T31 OOlbTbl =| ■ BZX75 SERIES STABISTORS Diodes with controlled conductance in a a ll-g la ss DO-7 regulation in circuits for clipping, coupling, clamping, and in many applications which require tight tolerances The se r ie s consists of 4 types with nominal voltages


    OCR Scan
    bb53T31 BZX75 bzx75c2v8 BZX75C3V6 PDF

    BZX75C1V4

    Abstract: BZX75-C2V1 BZX75-C1V4 BZX75C BZX75-G3V6 c2v1 BZX75/C1V4 BZX75-C2V8 BZX75-C3V6 BZX75C2V1
    Text: 2SE D N AMER PHILIPS/DISCRETE • bbS3T31 GDlbTbl ^ ■ BZX75 S E R IE S r-u-za ST A B IST O R S Diodes with controlled conductance in a a ll-g lass DO-7 regulation in circuits for clipping, coupling, clamping, and in many applications which require tight tolerances


    OCR Scan
    BZX75 BZX75C1V4 BZX75-C2V1 BZX75-C1V4 BZX75C BZX75-G3V6 c2v1 BZX75/C1V4 BZX75-C2V8 BZX75-C3V6 BZX75C2V1 PDF

    APY12

    Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367
    Text: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP


    OCR Scan
    Edition-1978) Ausgabe-1978) BS3934 SO-26 OT-114 NS371 APY12 BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367 PDF