Untitled
Abstract: No abstract text available
Text: SMF15K Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current50m V(RRM)(V) Rep.Pk.Rev. Voltage15k t(rr) Max.(s) Rev.Rec. Time300n @I(F) (A) (Test Condition)5.0m @I(R) (A) (Test Condition)10m V(FM) Max.(V) Forward Voltage24 @I(FM) (A) (Test Condition)50m
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SMF15K
Current50m
Voltage15k
Time300n
Voltage24
Current250n
Current10u
StyleAxial-39
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Untitled
Abstract: No abstract text available
Text: 3GCRJX Thyristors Gate Turn Off Thyristor GTO V(DRM) Max. (V)600 V(RRM) Max. (V) I(T) Rated Maximum (A)3.0 @Temp. (øC) (Test Condition)25Ï I(TSM) Max. (A)40 @ t(w) (s) (Test Condition) I(GT) Max. (A)50m V(GT) Max.(V)3.0 I(H) Max. (A) Holding Current50m
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Current50m
StyleStR-10
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Untitled
Abstract: No abstract text available
Text: 3GCREY Thyristors Gate Turn Off Thyristor GTO V(DRM) Max. (V)200 V(RRM) Max. (V) I(T) Rated Maximum (A)3.0 @Temp. (øC) (Test Condition)25Ï I(TSM) Max. (A)40 @ t(w) (s) (Test Condition) I(GT) Max. (A)50m V(GT) Max.(V)3.0 I(H) Max. (A) Holding Current50m
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Current50m
StyleStR-10
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Untitled
Abstract: No abstract text available
Text: 3GCRHZ Thyristors Gate Turn Off Thyristor GTO V(DRM) Max. (V)400 V(RRM) Max. (V) I(T) Rated Maximum (A)3.0 @Temp. (øC) (Test Condition)25Ï I(TSM) Max. (A)40 @ t(w) (s) (Test Condition) I(GT) Max. (A)50m V(GT) Max.(V)3.0 I(H) Max. (A) Holding Current50m
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Current50m
StyleStR-10
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Untitled
Abstract: No abstract text available
Text: SSTDPAD50 Diodes Array of Independent Diodes Military/High-RelN @Temp øC (Test Condition) Circuits Per Package1 Diodes Per Circuit2 I(F) Max. (A) Forward Current50m V(RRM) (V) Rep.Pk.Rev. Voltage30ó t(rr) Max.(s) Rev. Rec. Time @I(F) (A) (Test Condition)
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SSTDPAD50
Current50m
Voltage30Ã
Current50p
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Untitled
Abstract: No abstract text available
Text: 1N5220 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current50m @Temp (øC) (Test Condition) V(RRM)(V) Rep.Pk.Rev. Voltage30 I(FSM) Max.(A) Pk.Fwd.Sur.Cur. V(FM) Max.(V) Forward Voltage1.1 @I(FM) (A) (Test Condition)50m @Temp. (øC) (Test Condition)
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1N5220
Current50m
Voltage30
Current50u
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Untitled
Abstract: No abstract text available
Text: 1N3287+JAN Diodes General Purpose Fast Rectifier Military/High-RelY I O Max.(A) Output Current50m V(RRM)(V) Rep.Pk.Rev. Voltage6.0 t(rr) Max.(s) Rev.Rec. Time @I(F) (A) (Test Condition) @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage260m @I(FM) (A) (Test Condition)1.0m
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1N3287
Current50m
Voltage260m
Current15u
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Untitled
Abstract: No abstract text available
Text: PTC207M Diodes Germanium Diode Military/High-RelN I O Max.(A) Output Current50m V(RRM)(V) Rep.Pk.Rev. Voltage60 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.500m V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)50m I(RM) Max.(A) Reverse Current500u @V(R) (V)(Test Condition)60
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PTC207M
Current50m
Voltage60
Current500u
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Untitled
Abstract: No abstract text available
Text: 1N476 Diodes Germanium Diode Military/High-RelN I O Max.(A) Output Current50m V(RRM)(V) Rep.Pk.Rev. Voltage90 I(FSM) Max.(A) Pk.Fwd.Sur.Cur. V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)3.0m I(RM) Max.(A) Reverse Current180u @V(R) (V)(Test Condition)75
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1N476
Current50m
Voltage90
Current180u
nt50m
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Untitled
Abstract: No abstract text available
Text: PFB15AA100 Thyristors Full Controlled Triple AC Switch Module V RRM Max. (V) V(DRM) Max. (V)1.0k I(T) Rated Maximum (A)15± @Temp. (øC) (Test Condition)77# I(TSM) Max. (A)350 @ t(w) (s) (Test Condition)8.3m I(GT) Max. (A)70m V(GT) Max.(V)3 I(H) Max. (A) Holding Current50mÂ
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PFB15AA100
Current50mÃ
Current10m
HL080HD7
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Untitled
Abstract: No abstract text available
Text: SSTDPAD100 Diodes Array of Independent Diodes Military/High-RelN @Temp øC (Test Condition) Circuits Per Package1 Diodes Per Circuit2 I(F) Max. (A) Forward Current50m V(RRM) (V) Rep.Pk.Rev. Voltage30ó t(rr) Max.(s) Rev. Rec. Time @I(F) (A) (Test Condition)
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SSTDPAD100
Current50m
Voltage30Ã
Current100p
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Untitled
Abstract: No abstract text available
Text: UF100C Thyristors Four-Layer Shockley Diode V(BO) Min. (V)90 V(BO) Max. (V)110 I(S) Max. (A)100u I(TRM) Max. (A)1.5§ @ t(w) (s) (Test Condition) I(TSM) Max. (A)15 V(R) Max. (V)110 I(H) Max. (A) Holding Current50m V(TM) Max. (V)1.0 @I(T) (A) (Test Condition)750m
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UF100C
Current50m
StyleTO-204AAvar
NumberTY00200003
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Untitled
Abstract: No abstract text available
Text: A2S869 Diodes General Purpose Schottky Rectifier Military/High-RelN I O Max.(A) Output Current50m @Temp (øC) (Test Condition)25’ V(RRM)(V) Rep.Pk.Rev. Voltage20 I(FSM) Max.(A) Pk.Fwd.Sur.Cur. V(FM) Max.(V) Forward Voltage320m @I(FM) (A) (Test Condition)1.0m
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A2S869
Current50m
Voltage20
Voltage320m
Current500n
StyleDO-34var
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Untitled
Abstract: No abstract text available
Text: 1S2787 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current50m V(RRM)(V) Rep.Pk.Rev. Voltage40 t(rr) Max.(s) Rev.Rec. Time3.0n @I(F) (A) (Test Condition)5.0m @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage0.9 @I(FM) (A) (Test Condition)5.0m
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1S2787
Current50m
Voltage40
StyleDO-35
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Untitled
Abstract: No abstract text available
Text: DPAD1 Diodes Array of Independent Diodes Military/High-RelN @Temp øC (Test Condition) Circuits Per Package2 Diodes Per Circuit1 I(F) Max. (A) Forward Current50m V(RRM) (V) Rep.Pk.Rev. Voltage120 t(rr) Max.(s) Rev. Rec. Time @I(F) (A) (Test Condition) @I(R) (A) (Test Condition)
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Current50m
Voltage120
StyleTO-78
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Untitled
Abstract: No abstract text available
Text: 1N307 Diodes Germanium Diode Military/High-RelN I O Max.(A) Output Current50m V(RRM)(V) Rep.Pk.Rev. Voltage125 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.500m V(FM) Max.(V) Forward Voltage1 @I(FM) (A) (Test Condition)100m I(RM) Max.(A) Reverse Current5u @V(R) (V)(Test Condition)10
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1N307
Current50m
Voltage125
Current90u
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Untitled
Abstract: No abstract text available
Text: UF100B Thyristors Four-Layer Shockley Diode V(BO) Min. (V)85 V(BO) Max. (V)115 I(S) Max. (A)100u I(TRM) Max. (A)1.5§ @ t(w) (s) (Test Condition) I(TSM) Max. (A)15 V(R) Max. (V)115 I(H) Max. (A) Holding Current50m V(TM) Max. (V)1.0 @I(T) (A) (Test Condition)750m
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UF100B
Current50m
StyleTO-204AAvar
NumberTY00200003
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Untitled
Abstract: No abstract text available
Text: 1N3846 Thyristors Four-Layer Shockley Diode V(BO) Min. (V)90 V(BO) Max. (V)110 I(S) Max. (A)125u I(TRM) Max. (A)10 @ t(w) (s) (Test Condition)10u I(TSM) Max. (A) V(R) Max. (V)60 I(H) Max. (A) Holding Current50m V(TM) Max. (V)1.2 @I(T) (A) (Test Condition)100m
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1N3846
Current50m
StyleDO-204AA
NumberTY00200003
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Untitled
Abstract: No abstract text available
Text: 3GCRDX Thyristors Gate Turn Off Thyristor GTO V(DRM) Max. (V)150 V(RRM) Max. (V) I(T) Rated Maximum (A)3.0 @Temp. (øC) (Test Condition)25Ï I(TSM) Max. (A)40 @ t(w) (s) (Test Condition) I(GT) Max. (A)50m V(GT) Max.(V)3.0 I(H) Max. (A) Holding Current50m
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Current50m
StyleStR-10
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Untitled
Abstract: No abstract text available
Text: 1N3840 Thyristors Four-Layer Shockley Diode V(BO) Min. (V)21 V(BO) Max. (V)29 I(S) Max. (A)125u I(TRM) Max. (A)10 @ t(w) (s) (Test Condition)10u I(TSM) Max. (A)10 V(R) Max. (V)15 I(H) Max. (A) Holding Current50m V(TM) Max. (V)1.2 @I(T) (A) (Test Condition)100m
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1N3840
Current50m
StyleDO-204AA
NumberTY00200003
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Untitled
Abstract: No abstract text available
Text: 3GCRCY Thyristors Gate Turn Off Thyristor GTO V(DRM) Max. (V)100 V(RRM) Max. (V) I(T) Rated Maximum (A)3.0 @Temp. (øC) (Test Condition)25Ï I(TSM) Max. (A)40 @ t(w) (s) (Test Condition) I(GT) Max. (A)50m V(GT) Max.(V)3.0 I(H) Max. (A) Holding Current50m
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Current50m
StyleStR-10
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Untitled
Abstract: No abstract text available
Text: 3GCRHY Thyristors Gate Turn Off Thyristor GTO V(DRM) Max. (V)400 V(RRM) Max. (V) I(T) Rated Maximum (A)3.0 @Temp. (øC) (Test Condition)25Ï I(TSM) Max. (A)40 @ t(w) (s) (Test Condition) I(GT) Max. (A)50m V(GT) Max.(V)3.0 I(H) Max. (A) Holding Current50m
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Current50m
StyleStR-10
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Untitled
Abstract: No abstract text available
Text: 3GCRIX Thyristors Gate Turn Off Thyristor GTO V(DRM) Max. (V)500 V(RRM) Max. (V) I(T) Rated Maximum (A)3.0 @Temp. (øC) (Test Condition)25Ï I(TSM) Max. (A)40 @ t(w) (s) (Test Condition) I(GT) Max. (A)50m V(GT) Max.(V)3.0 I(H) Max. (A) Holding Current50m
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Current50m
StyleStR-10
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Untitled
Abstract: No abstract text available
Text: 3GCRDZ Thyristors Gate Turn Off Thyristor GTO V(DRM) Max. (V)150 V(RRM) Max. (V) I(T) Rated Maximum (A)3.0 @Temp. (øC) (Test Condition)25Ï I(TSM) Max. (A)40 @ t(w) (s) (Test Condition) I(GT) Max. (A)50m V(GT) Max.(V)3.0 I(H) Max. (A) Holding Current50m
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Current50m
StyleStR-10
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