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    CY10E422 Search Results

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    CY10E422 Price and Stock

    Rochester Electronics LLC CY10E422L-7DC

    IC SRAM 1KBIT PARALLEL 24SBDIP
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    DigiKey CY10E422L-7DC Bulk 18
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    • 100 $17.19
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    Rochester Electronics LLC CY10E422L-7KCQ

    IC SRAM 1KBIT PARALLEL 24CFLATPK
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    DigiKey CY10E422L-7KCQ Bulk 27
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    • 100 $11.38
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    Rochester Electronics LLC CY10E422L-7JCQ

    IC SRAM 1KBIT PARALLEL 28PLCC
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    DigiKey CY10E422L-7JCQ Bulk 27
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    • 100 $11.38
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    Cypress Semiconductor CY10E422L-5JC

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics CY10E422L-5JC 2
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    Quest Components CY10E422L-5JC 105
    • 1 $19.5
    • 10 $19.5
    • 100 $18
    • 1000 $18
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    Cypress Semiconductor CY10E422L-7DC

    256 X 4 STANDARD SRAM, 7 NS, CDIP24
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components CY10E422L-7DC 80,015
    • 1 $17
    • 10 $17
    • 100 $17
    • 1000 $8.5
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    CY10E422L-7DC 88
    • 1 $19.125
    • 10 $19.125
    • 100 $14.875
    • 1000 $14.875
    • 10000 $14.875
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    Rochester Electronics CY10E422L-7DC 4,972 1
    • 1 $16.53
    • 10 $16.53
    • 100 $15.54
    • 1000 $14.05
    • 10000 $14.05
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    CY10E422 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    CY62256LL-PC

    Abstract: VIC068A-GC VIC64-NC VIC64-UMB PALCE22V10-JI PALC16L8Q PLD VME A113 CY7B923 JESD22-A113
    Text: Cypress Semiconductor Product Reliability 1997 Published June, 1997 CYPRESS SEMICONDUCTOR PRODUCT RELIABILITY TABLE OF CONTENTS 1.0 OVERVIEW OF CYPRESS SEMICONDUCTOR TOTAL QUALITY MANAGEMENT SYSTEM. 1 2.0 ELECTRICAL AVERAGE OUTGOING QUALITY. 2


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    PALCE22V10-JC FLASH-FL22D CY62256LL-PC VIC068A-GC VIC64-NC VIC64-UMB PALCE22V10-JI PALC16L8Q PLD VME A113 CY7B923 JESD22-A113 PDF

    CY27S03A

    Abstract: 15JC10 CY7C190 cy7c9101 cy7c122 die VIC068A user guide
    Text: Thermal Management and Component Reliability slope of the logarithmic plots is given by the activation energy of the failure mechanisms causing thermally activated wear out of the device see Figure 1 . One of the key variables determining the long-term reliability


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    CY7C122 CY27S03A 15JC10 CY7C190 cy7c9101 cy7c122 die VIC068A user guide PDF

    CY7C9101

    Abstract: CY7C510 CY7C190 cy7c189 G30-88 CY7c910 EA 9394 cy3341 CY6116 cy7c901
    Text: fax id: 8511 Thermal Management Thermal Management and Component Reliability One of the key variables determining the long-term reliability of an integrated circuit is the junction temperature of the device during operation. Long-term reliability of the semiconductor chip degrades proportionally with increasing temperatures following an exponential function described by the


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    PDF

    Gunn Diode symbol

    Abstract: cy202 CY7C190 WSP-109BMP3 pal22V10D cy7b166 cy7c291 CY7C371 EV film cap calculation gunn diode datasheet
    Text: CYPRESS SEMICONDUCTOR PRODUCT RELIABILITY APPENDIX A: FAILURE RATE CALCULATION Thermal Acceleration Factors Acceleration factors AF for thermal stresses (High Temperature Operating Life, Data Retention and High Temperature Steady State Life) are calculated from the Arrhenius equation.


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    62x10-5 Gunn Diode symbol cy202 CY7C190 WSP-109BMP3 pal22V10D cy7b166 cy7c291 CY7C371 EV film cap calculation gunn diode datasheet PDF

    Untitled

    Abstract: No abstract text available
    Text: ^ CY10E422 CY100E422 » ss f^YPPP’^c; • 256 x 4-bit organization • Ultra high speed/standard power — tAA = 3.5 ns — U : e = 220 niA • Low-power version — tAA = 5 ns — I e e " 150 inA • Both 10KH/10K- and 100K-compatible I/O versions • 10K/10KH military version


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    CY10E422 CY100E422 10KH/10K- 100K-compatible 10K/10KH CY10E422L-7LC CY10E422Lâ CY100E422â CY100E422Lâ PDF

    TR10E

    Abstract: CY100E422L5DC C4221
    Text: CY10E422 _CY100E422 SEMCONDtCTOR • Open emitter output for ease of memory expansion Features • 256 x 4-bit organization • Industry-standard pinout • Ultra high speed/standard power — tA A = 3 ns, tA B S = 2 ns — IEE = 220 mA


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    CY10E422 CY100E422 10KH/10K 10K/10KH 100Kcompatible. CY100E422-31X' CYI00E422- CY100E422-3YC CY100E422-5YC TR10E CY100E422L5DC C4221 PDF

    Untitled

    Abstract: No abstract text available
    Text: CY10E422 CY100E422 i s ^ Y p p p c ;< ^ • ■ ■ ^ s \ # f SEMICONDUCTOR Features • Open em itter output for ease of memory expansion • Ultra high speed/standard power — tAA = 3.5 ns • Industry-standard pinout — Iee = 220 mA Functional Description


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    CY10E422 CY100E422 10KH/10K- 10K/10KH 10E422L--7LC 10E422L--7KM 100E422--3 100E422--5D PDF

    DIC20

    Abstract: CY10E422L-5DMB
    Text: CY10E422 S i - ~ CY1 = SL- SEMICONDUCTOR Features 256 x 4 ECL Static RAM • On-chip voltage compensation for improved noise margin • Open emitter output for ease of memory expansion • Industry-standard pinout • 256 x 4-bit organization • Ultra high speed/standard power


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    CY10E422 CY10E422L-- 10E422L-- DIC20 CY10E422L-5DMB PDF

    CY10E422L-5KMB

    Abstract: CY10E422L-5DMB CY100E422L5DC CY10E422L7DC CY10E422 CY100E422 CY10E422L5JC CY10E422L-5DC CY100E42235KC 10e422
    Text: _ CY10E422 CY100E422 "-• 256 x 4 ECL Static RAM CYPRESS SEMICONDUCTOR Features — t^A ~ 3*5 ns • On-ehip voltage compensation for improved noise margin • Open emitter output for ease of memory expansion • Industry-standard pinout — I e e = 220 mA


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    CY10E422 CY100E422 10KH/10K- 10K/10KH CY100E422â 24-Lead 400-Mil) CY10E422L-5KMB CY10E422L-5DMB CY100E422L5DC CY10E422L7DC CY10E422L5JC CY10E422L-5DC CY100E42235KC 10e422 PDF

    Untitled

    Abstract: No abstract text available
    Text: CY10E422 CY100E422 : J P ' CYPRESS — — SEMICONDUCTOR 256 x 4 ECL Static RAM • Open em itter output for ease of memory expansion Features • 256 x 4 -b it organization • • Ultra high speed/standard power Industry-standard pinout F unctional D escrip tion


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    CY10E422 CY100E422 10E422L-7K 10E422L-7D 10E422L-7YM 100E422-3LC CY100E422-3Y CY100E422-3K 100E422-5LC PDF

    Untitled

    Abstract: No abstract text available
    Text: ^ ^' 3 w ' SEm!cONDUCTOR 256 x 4 ECL Static RAM The four independent active LOW block select B inputs control memory selection and allow for memory expansion and re­ configuration. Each block select (Bi through B 4 ), when active, turns off the cor­ responding output and memory block. The


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    10KH/10K- 100K-compatibie 10K/10KH CY10E422 CY100E422 CY10E422L-- 10E422L-- PDF

    IR 10e

    Abstract: No abstract text available
    Text: Preview llllìììlll I v T M DATA SHEET September 1989 M M 1 0 E422/M M 10 0 E422 256 x 4 ECL STATIC RAM FEATURES . . . 256 X 4 BITS ORGANIZATION ULTRA HIGH SPEED/STANDARD POWER - tA A = 3 ns, tA B S = 2 ns - 1EE = 220 mA LOW POWER VERSION - tAA = 5 ns - 1EE = 150 mA


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    KH/10 MM10E422 MM100E422 MM10E422/100E422 10E422 10E422 100E422 IR 10e PDF

    CY7C2901

    Abstract: No abstract text available
    Text: ÌB Ìcy p ress • Table 10. Die Sizes of Cypress Devices continued P a rt N um ber Size (mil2) P a rt N um ber Size (mil2) ECL Logic CY 2909A 7968 CY100E301L 14875 CY2910A 21750 CY100E302L 14875 CY2911A 7968 CY100E422 6960 11800 CY100E474 10830 CY7C510


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    CY100E301L CY2910A CY100E302L CY2911A CY100E422 CY100E474 CY7C510 CY100E494 CY7C516 CY10E301L CY7C2901 PDF