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    C5750X5R1H106M Price and Stock

    TDK Corporation C5750X5R1H106M230KA

    CAP CER 10UF 50V X5R 2220
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    DigiKey C5750X5R1H106M230KA Reel 24,000 500
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    C5750X5R1H106M230KA Cut Tape 673 1
    • 1 $1.78
    • 10 $1.336
    • 100 $0.9982
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    C5750X5R1H106M230KA Digi-Reel 1
    • 1 $1.78
    • 10 $1.336
    • 100 $0.9982
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    Mouser Electronics C5750X5R1H106M230KA 6,557
    • 1 $1.76
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    • 100 $0.979
    • 1000 $0.703
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    Verical C5750X5R1H106M230KA 1,000 500
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    Bristol Electronics C5750X5R1H106M230KA 139
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    Chip1Stop C5750X5R1H106M230KA Cut Tape 5
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    TDK Corporation C5750X5R1H106M(230KA)

    Multilayer Ceramic Capacitor, 10 uF, 50 V, ± 20%, X5R, 2220 [5750 Metric] - Tape and Reel (Alt: C5750X5R1H106M230K)
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    Avnet Americas C5750X5R1H106M(230KA) Reel 36 Weeks 500
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    • 1000 $0.7735
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    TDK Corporation C5750X5R1H106M

    Cap Ceramic 10uF 50V X5R 20% Pad SMD 2220 85°C T/R
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    Onlinecomponents.com C5750X5R1H106M 11
    • 1 $3.388
    • 10 $3.388
    • 100 $1.61
    • 1000 $0.7
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    Bristol Electronics C5750X5R1H106M 3,791
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    C5750X5R1H106M 51 4
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    TDK Corporation C5750X5R1H106MT000N

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    Bristol Electronics C5750X5R1H106MT000N 135 3
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    Quest Components C5750X5R1H106MT000N 108
    • 1 $2.5
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    • 100 $0.75
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    TDK Corporation C5750X5R1H106MT

    CAPACITOR, CERAMIC, MULTILAYER, 50 V, X5R, 10 uF, SURFACE MOUNT, 2220 (Also Known As: C5750X5R1H106M)
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    Quest Components C5750X5R1H106MT 977
    • 1 $1.75
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    • 1000 $0.805
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    C5750X5R1H106MT 977
    • 1 $1.75
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    • 1000 $0.805
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    C5750X5R1H106MT 40
    • 1 $2
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    C5750X5R1H106MT 40
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    C5750X5R1H106MT 791
    • 1 $2.8
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    C5750X5R1H106MT 791
    • 1 $2.8
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    C5750X5R1H106MT 65
    • 1 $3.448
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    • 100 $1.8964
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    C5750X5R1H106MT 65
    • 1 $3.448
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    • 100 $1.8964
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    C5750X5R1H106MT 1,600
    • 1 $2.8
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    C5750X5R1H106MT 1,600
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    C5750X5R1H106M Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    C5750X5R1H106M230KA TDK Ceramic Capacitors, Capacitors, CAP CER 10UF 50V 20% X5R 5750 Original PDF

    C5750X5R1H106M Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    C5750X7R1H106M

    Abstract: c5750x7r1h106k C5750JF1E476Z C5750Y5V1H226Z tdk capacitors c5750 C5750JF1H226Z tdk capacitors Y5V C5750X5R1H106K C5750X5R1H106M C5750
    Text: TDK Equivalent Circuit Model Library Oct. 31, 2007 Model Type: Simple Model Capacitors / C5750 Series X5R Circuit Diagram Circuit Parameters Part No. C1[uF] L1[nH] R1[ohm] R2[Gohm] C5750X5R1H106K 10 0.65 0.003 10.0 C5750X5R1H106M 10 0.65 0.003 10.0 C5750X5R1C336M


    Original     		PDF C5750 C5750X5R1H106K C5750X5R1H106M C5750X5R1C336M C5750X5R1C476M C5750X5R1A686M C5750X7R1H106K C5750JF1H226Z C5750X7R1H106M c5750x7r1h106k C5750JF1E476Z C5750Y5V1H226Z tdk capacitors c5750 C5750JF1H226Z tdk capacitors Y5V C5750X5R1H106K C5750X5R1H106M

    C1005JB

    Abstract: C1608C0G1H272J C5750X5R1C476M230KA c2012jb1h C2012X5R1H104K C1005X5R1E154K C3216JB0J476 C1608X7R1H154K C2012CH1H C1005JB1A105M
    Text: Multilayer Ceramic Chip Capacitors General use C series Type: C0402[EIA CC01005] C0603[EIA CC0201] C1005[EIA CC0402] C1608[EIA CC0603] C2012[EIA CC0805] C3216[EIA CC1206] C3225[EIA CC1210] C4532[EIA CC1812] C5750[EIA CC2220] Issue date: August 2012 • All specifications are subject to change without notice.


    Original     		PDF C0402 CC01005] C0603 CC0201] C1005 CC0402] C1608 CC0603] C2012 CC0805] C1005JB C1608C0G1H272J C5750X5R1C476M230KA c2012jb1h C2012X5R1H104K C1005X5R1E154K C3216JB0J476 C1608X7R1H154K C2012CH1H C1005JB1A105M

    MRF6S21140HR3

    Abstract: MRF6S21140HSR3 AN1955 MRF6S21140H D2080 Nippon capacitors
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S21140H Rev. 5, 2/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF6S21140H MRF6S21140HR3 MRF6S21140HSR3 MRF6S21140HSR3 AN1955 MRF6S21140H D2080 Nippon capacitors

    CKD310

    Abstract: CGA3E C3216X7R2E473KT CKD310JB0J226S CC01005 AEC-Q200 C1005 C1608 C3216 CC0201
    Text: TDK MLCC US Catalog Version A10 This page is intentionally left blank. ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ General Application, C Series Mid Voltage Application, C Series High Voltage Application, C Series High Temperature Application, C Series Tight Tolerance Capacitor, C Series


    Original     		PDF

    capacitor 2.5uf 10v

    Abstract: SMD Electrolytic CAPACITORS 100uf 16v C5750Y5V1E476Z C4532Y5V1A107Z C3225 C3225X7R1H105K C4532X7R1H225M C3225X7R1H684M CC1210 CC2220
    Text: 1/4 001-01 / 20020301 / e4416_c3225.fm Ceramic Capacitors C Series For Smoothing SMD FEATURES • Providing capacitance values in the range of electrolytic types and long service life, this product is recommended for highreliability power supply applications.


    Original     		PDF c3225 C5750X7R1E156M C5750X7R1E226M C5750Y5V1E476Z C5750Y5V1C107Z capacitor 2.5uf 10v SMD Electrolytic CAPACITORS 100uf 16v C5750Y5V1E476Z C4532Y5V1A107Z C3225X7R1H105K C4532X7R1H225M C3225X7R1H684M CC1210 CC2220

    Untitled

    Abstract: No abstract text available
    Text: MULTILAYER CERAMIC CHIP CAPACITORS C Series Commercial Grade General Up to 50V Type: C0402 [EIA CC01005] C0603 [EIA CC0201] C1005 [EIA CC0402] C1608 [EIA CC0603] C2012 [EIA CC0805] C3216 [EIA CC1206] C3225 [EIA CC1210] C4532 [EIA CC1812] C5750 [EIA CC2220]


    Original     		PDF C0402 CC01005] C0603 CC0201] C1005 CC0402] C1608 CC0603] C2012 CC0805]

    303 2170 001

    Abstract: ATC100B0R6BT500XT J637 MRF8S21200HR6 MRF8S21200HSR6 A114 A115 AN1955 JESD22 j453
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S21200H Rev. 1, 11/2009 RF Power Field Effect Transistors MRF8S21200HR6 MRF8S21200HSR6 N - Channel Enhancement - Mode Lateral MOSFETs Designed for W - CDMA and LTE base station applications with frequencies


    Original     		PDF MRF8S21200H MRF8S21200HR6 MRF8S21200HSR6 MRF8S21200HR6 303 2170 001 ATC100B0R6BT500XT J637 MRF8S21200HSR6 A114 A115 AN1955 JESD22 j453

    100B0R1BW

    Abstract: 100A1R5BW A113 A114 A115 AN1955 C101 JESD22 MW6IC2015GNBR1 MW6IC2015NBR1
    Text: Freescale Semiconductor Technical Data Document Number: MW6IC2015N Rev. 0, 2/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC2015N wideband integrated circuit is designed for base station applications. It uses Freescale’s newest High Voltage 26 to 32 Volts LDMOS


    Original     		PDF MW6IC2015N MW6IC2015N MW6IC2015NBR1 MW6IC2015GNBR1 100B0R1BW 100A1R5BW A113 A114 A115 AN1955 C101 JESD22 MW6IC2015GNBR1

    100B101JW

    Abstract: 232272461009 465B A114 A115 AN1955 JESD22 MRF7S18170H MRF7S18170HR3 MRF7S18170HSR3
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S18170H Rev. 0, 10/2006 RF Power Field Effect Transistors MRF7S18170HR3 MRF7S18170HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1805 to


    Original     		PDF MRF7S18170H MRF7S18170HR3 MRF7S18170HSR3 MRF7S18170HR3 DataMRF7S18170H 100B101JW 232272461009 465B A114 A115 AN1955 JESD22 MRF7S18170H MRF7S18170HSR3

    C2012JF1C475Z

    Abstract: C4532JF1H106Z C5750JF1E476Z C2012JF1A106Z C3216JF1H225Z c1608jf1a225z c3225 transistor C1608JF1C105Z CC0603 x5r C1608CH1H100D
    Text: 1/15 General Multilayer Ceramic Chip Capacitors C Series FEATURES • High capacitance has been achieved through precision technologies that enable the use of multiple thinner ceramic dielectric layers. • A monolithic structure ensures superior mechanical strength and


    Original     		PDF C5750X5R1H106K C5750X5R1H106M C5750X5R1E106K C5750X5R1E106M C5750X5R1E156M C5750X5R1E226M C5750X5R1C336M C5750X5R1C476M C2012JF1C475Z C4532JF1H106Z C5750JF1E476Z C2012JF1A106Z C3216JF1H225Z c1608jf1a225z c3225 transistor C1608JF1C105Z CC0603 x5r C1608CH1H100D

    A113

    Abstract: A114 A115 C101 JESD22 MRF6S18060MBR1
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S18060 Rev. 2, 5/2006 Replaced by MRF6S18060NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.


    Original     		PDF MRF6S18060 MRF6S18060NR1/NBR1. MRF6S18060MR1 MRF6S18060MBR1 MRF6S18060MR1 A113 A114 A115 C101 JESD22 MRF6S18060MBR1

    J294

    Abstract: 200B104MW 465B A114 A115 AN1955 JESD22 MRF7S19170HR3 MRF7S19170HSR3 MRF7S19170HS
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S19170H Rev. 0, 10/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S19170HR3 MRF7S19170HSR3 Designed for CDMA base station applications with frequencies from 1930 to


    Original     		PDF MRF7S19170H MRF7S19170HR3 MRF7S19170HSR3 MRF7S19170HR3 DataMRF7S19170H J294 200B104MW 465B A114 A115 AN1955 JESD22 MRF7S19170HSR3 MRF7S19170HS

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8S9102N Rev. 0, 2/2011 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base


    Original     		PDF MRF8S9102N MRF8S9102NR3

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S18170H Rev. 1, 12/2008 RF Power Field Effect Transistors MRF7S18170HR3 MRF7S18170HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1805 to


    Original     		PDF MRF7S18170H MRF7S18170HR3 MRF7S18170HSR3 MRF7S18170HR3

    C1608CH1H010C080AA

    Abstract: C1608X7R1H103K080AA 1608 B 100NF C2012X5R1H105K C1005X5R1A225K050BC c2012x5r1v C3216JB1H106K C1005C0G1H100C
    Text: Multilayer Ceramic Chip Capacitors General use C series Type: C0402[EIA CC01005] C0603[EIA CC0201] C1005[EIA CC0402] C1608[EIA CC0603] C2012[EIA CC0805] C3216[EIA CC1206] C3225[EIA CC1210] C4532[EIA CC1812] C5750[EIA CC2220] Issue date: August 2011 • All specifications are subject to change without notice.


    Original     		PDF C0402 CC01005] C0603 CC0201] C1005 CC0402] C1608 CC0603] C2012 CC0805] C1608CH1H010C080AA C1608X7R1H103K080AA 1608 B 100NF C2012X5R1H105K C1005X5R1A225K050BC c2012x5r1v C3216JB1H106K C1005C0G1H100C

    c5750x7r1h106k

    Abstract: C5750X7R1H106M C5750X5R1H106K C5750Y5V1E476Z C5750Y5V1H226Z Y5V TDK C5750Y5V1E476Z k 336 16v C5750X7R1E226M C5750Y5V1A107Z
    Text: Capacitance Range Chart C5750 [EIA CC2220] Capacitance Range Chart Temperature Characteristics: X7R ± 15% , X5R (± 15%) Rated Voltage: 50V (1H), 25V (1E), 16V (1C), 10V (1A), 6.3V (0J) Capacitance (pF) 4,700,000 6,800,000 10,000,000 15,000,000 22,000,000


    Original     		PDF C5750 CC2220] C5750Y5V1H226Z C5750Y5V1E476Z C5750Y5V1C107Z C5750Y5V1A107Z C5750 c5750x7r1h106k C5750X7R1H106M C5750X5R1H106K Y5V TDK C5750Y5V1E476Z k 336 16v C5750X7R1E226M C5750Y5V1A107Z

    C1608C0G1H5R6C

    Abstract: C1608X7R1E153K C0603X5R0J154 c2012 TDK ceramic capacitor C0402C0G1C910J C1005 C1608 C3216 CC0201 CC0805
    Text: C Series General Application Type: C0402 [EIA CC01005] C0603 [EIA CC0201] C1005 [EIA CC0402] C1608 [EIA CC0603] C2012 [EIA CC0805] C3216 [EIA CC1206] C3225 [EIA CC1210] C4532 [EIA CC1812] C5750 [EIA CC2220] Issue date: April 2011 TDK MLCC US Catalog Version B11


    Original     		PDF C0402 CC01005] C0603 CC0201] C1005 CC0402] C1608 CC0603] C2012 CC0805] C1608C0G1H5R6C C1608X7R1E153K C0603X5R0J154 c2012 TDK ceramic capacitor C0402C0G1C910J C1005 C1608 C3216 CC0201 CC0805

    J209

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S21170H Rev. 0, 5/2006 RF Power Field Effect Transistors MRF7S21170HR3 MRF7S21170HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2110 to


    Original     		PDF MRF7S21170H MRF7S21170HR3 MRF7S21170HSR3 MRF7S21170H J209

    ss24 diode

    Abstract: SS24 DIODE schottky C3216X7R1H105K LM3478 VJ0805Y103KXAAT C5750X5R1H106M LM347 capacitor 10nf 50v 0805 datasheet resistor 2220 VJ0805Y102KXAAT
    Text: 6-7-05 Rev. 2 LM3478 Variable Input LED Driver U1 CSN Vin = 4.5V-12V VIN ISEN RC RFA CC COMP CIN + L1A FA/SD CS LM3478 FB D1 Q1 DR CO L1B AGND PGND + RSNS CF Vin + - LM321 U2 R2 LEDx LED1 RSET R1 Theory of Operation This circuit can deliver a constant current of 350mA to an array of 2 to 8 LEDs over a wide range


    Original     		PDF LM3478 V-12V LM3478 LM321 350mA OT23-5 Si4850EY VJ0805Y104KXAAT ss24 diode SS24 DIODE schottky C3216X7R1H105K VJ0805Y103KXAAT C5750X5R1H106M LM347 capacitor 10nf 50v 0805 datasheet resistor 2220 VJ0805Y102KXAAT

    C5750JF1E476Z

    Abstract: No abstract text available
    Text: 1/15 General Multilayer Ceramic Chip Capacitors C Series FEATURES • High capacitance has been achieved through precision technologies that enable the use of multiple thinner ceramic dielectric layers. • A monolithic structure ensures superior mechanical strength and


    Original     		PDF C5750X5R1H106K C5750X5R1H106M C5750X5R1E106K C5750X5R1E106M C5750X5R1E156M C5750X5R1E226M C5750X5R1C336M C5750X5R1C476M C5750JF1E476Z

    LM5642MH

    Abstract: sanyo capacitor se green vishay transistor databook LM5642MTCX LM5642X LM5642XMT LM5642XMTX LM5642 LM5642MHX LM5642MTC
    Text: LM5642/LM5642X High Voltage, Dual Synchronous Buck Converter with Oscillator Synchronization General Description Features The LM5642 series consists of two current mode synchronous buck regulator controllers operating 180° out of phase with each other at a normal switching frequency of


    Original     		PDF LM5642/LM5642X LM5642 200kHz 375kHz LM5642X. LM5642MH sanyo capacitor se green vishay transistor databook LM5642MTCX LM5642X LM5642XMT LM5642XMTX LM5642MHX LM5642MTC

    C5750X5R1H106MT

    Abstract: MRF7S21210HS S2116
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S21210H Rev. 2, 3/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF7S21210HR3 MRF7S21210HSR3 Designed for CDMA base station applications with frequencies from 2110 to


    Original     		PDF MRF7S21210H MRF7S21210HR3 MRF7S21210HSR3 C5750X5R1H106MT MRF7S21210HS S2116

    MRF6S21140HSR3

    Abstract: J932
    Text: Freescale Semiconductor Technical Data Rev. 2, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF6S21140HR3 MRF6S21140HSR3 J932

    transistors BC 458

    Abstract: BC 458 transistor BC 458 25C1740 A114 A115 AN1955 C101 JESD22 MRF7S21150HR3
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S21150H Rev. 1, 4/2009 RF Power Field Effect Transistors MRF7S21150HR3 MRF7S21150HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2110 to


    Original     		PDF MRF7S21150H MRF7S21150HR3 MRF7S21150HSR3 MRF7S21150HR3 transistors BC 458 BC 458 transistor BC 458 25C1740 A114 A115 AN1955 C101 JESD22