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    BUZ54 Search Results

    BUZ54 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Type PDF
    BUZ54 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BUZ54 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BUZ54 Unknown FET Data Book Scan PDF
    BUZ54 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BUZ54 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    BUZ54 Philips Semiconductors PowerMOS Transistor Scan PDF
    BUZ54 Siemens Power Transistors Scan PDF
    BUZ54A Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BUZ54A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BUZ54A Unknown Shortform Datasheet & Cross References Data Short Form PDF
    BUZ54A Philips Semiconductors PowerMOS Transistor Scan PDF
    BUZ54A Siemens Power Transistors Scan PDF

    BUZ54 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BUZ54

    Abstract: No abstract text available
    Text: , Una. \l Cs 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 BUZ54 PowerMOS Transistor QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope.


    Original     		PDF BUZ54 Tmb-25 Tj-25Â VR-100V BUZ54

    BUZ54A

    Abstract: No abstract text available
    Text: zSs.mi-Condu.ckoi \P\oducti, Line. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BUZ54A Power MOS transistor QUICK REFERENCE DATA SYMBOL PARAMETER GENERAL DESCRIPTION N-channel enhancement mode


    Original     		PDF BUZ54A BUZ54A

    BUZ54

    Abstract: No abstract text available
    Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: BUZ54 CASE OUTLINE: TO-204AA (TO-3) HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:


    Original     		PDF O-204AA BUZ54 BUZ54

    k2645

    Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
    Text: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt


    Original     		PDF MK135 MK136 MK137 MK138 MK139 MK140 Mk142 MK145 MK155 157kr k2645 k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417

    BUZ901P

    Abstract: BUZ900P BUZ900 buz90a d44c3 buz94 BUZ77 BUZ345 DTS107 DTS410
    Text: STI Type: BUZ341 Notes: Breakdown Voltage: 200 Continuous Current: 33 RDS on Ohm: 0.07 Trans Conductance Mhos: 15 Trans Conductance A: 21 Gate Threshold min: 2.1 Gate Threshold max: 4.0 Resistance Switching ton: 60 Resistance Switching toff: 680 Resistance Switching ID: 3.0


    Original     		PDF BUZ341 O-247 BUZ344 BUZ346 O-204AA/TO-3: DTS409 DTS410 BUZ901P BUZ900P BUZ900 buz90a d44c3 buz94 BUZ77 BUZ345 DTS107 DTS410

    BUZ54

    Abstract: BUZ54A Diode D 54 3tf* siemens 235L C160 TC-130-W C67078-S1010-A3 DIODE BUZ 300
    Text: SIEM ENS SIPMOS Power Transistors BUZ54 • N channel • Enhancement mode • Avalanche-rated VMT05152 Type VDS Id •^DS on Package 1> O rdering Code BUZ 54 1000 V 5.1 A 2 .0 £2 T O -2 0 4 A A C 6 7 0 7 8 -S 1 0 1 0 -A 2 BUZ 54 A 1000 V 4 .5 A 2 .6 n


    OCR Scan     		PDF vmt05152 O-204 C67078-S1010-A2 C67078-S1010-A3 54/BUZ 235bD5 023SbDS 00b7flTM BUZ54 BUZ54A Diode D 54 3tf* siemens 235L C160 TC-130-W C67078-S1010-A3 DIODE BUZ 300

    cr 406 transistor

    Abstract: BUZ54
    Text: PowerMOS transistor BUZ54 N AMER PHILIPS/DISCRETE — DhE D • ^ 5 3 ^ 3 1 0D14717 5 ■ “ T - $ cH 3 July 1987 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in


    OCR Scan     		PDF BUZ54 0D14717 T-39-13 bbS3T31 0D14723 cr 406 transistor BUZ54

    BUZ54A

    Abstract: IEC134 BUZ54
    Text: N AMER PHILIPS/DISCRETE übE D PowerMOS transistor " • ^53=131 0014724 S ■ BUZ54A T - 2^-/3 July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF BUZ54A 7Z63885 T-39-13 BUZ54A IEC134 BUZ54

    D1407

    Abstract: BUZ54 t03 package transistor pin dimensions MC 140 transistor 2sc406
    Text: BUZ54 PowerMOS transistor N AMER PH IL IP S/ DISCR ET E — QbE D — — • ^53=131 D014717 5 7 31-13 ~ — - July 1987 QUICK REFERENCE DATA PARAMETER sym bo l Drain-source voltage VDS Drain current d.c. Id Total power dissipation Ptot Drain-source on-state resistance


    OCR Scan     		PDF BUZ54_ bfa53131 BUZ54 T-39-13 D1407 BUZ54 t03 package transistor pin dimensions MC 140 transistor 2sc406

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE ObE D PowerMOS transistor " • bbS3TBl 00147BH B BUZ54A T -2 ? -/3 July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF 00147BH BUZ54A T-39-13 bbS3T31 0D1472T bb53131

    1N7001

    Abstract: 1N7000 8SS89 4900 SIEMENS 2N6155 2N6823 2N6826 BUZ11 BUZ211 IXTP4N90
    Text: - M. A %¿ £ tt t Vd s or * Vd g h V € £ të (Ta=25^C) Vg s (V) Ig s s Pd Id * /CH * /CH (A) (W) % 1 CnA) V g s th) Id s s Vg s (V) (m a Vd s (V) ) min max (V) (V) Vd s = Vg s Id (mA) Ö-) '14 F Ds(on) b(on) gfs Ciss Coss Crss <*typ) (max) (pF) (*typ)


    OCR Scan     		PDF XTP4N80 O-220 IXTP4N80A IXTP4N90 T0-204AA 2N6659 O-205AF 2N6660 1N7001 1N7000 8SS89 4900 SIEMENS 2N6155 2N6823 2N6826 BUZ11 BUZ211

    2N6155

    Abstract: BUZ23 SIEMENS siemens Ni 1000 4900 SIEMENS BUZ10 BUZ54 BUZ11 BUZ24 BSS92 BUZ64
    Text: - 314 - f M % tt € BSS92 6SS100 BSStOI SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS P N N BUZ6Û BUZ64 BUZZI BUZ72A BUZ73A BUZ74A BUZ76A BUZ80 8UZ211 2N6659 2N6660 2N6661 2N6TS5 2N67 56 f- + SIEMENS SIEMENS SIEMENS SIEMENS


    OCR Scan     		PDF SSS6N60 O-220 8SS89 BSS92 8SS100 O-220AB BUZ171 O-220ftB irf120 to-204aa 2N6155 BUZ23 SIEMENS siemens Ni 1000 4900 SIEMENS BUZ10 BUZ54 BUZ11 BUZ24 BUZ64

    4900 SIEMENS

    Abstract: 2N6155 BUZ211 BUZ54 SSS6N60 BUZ11 BUZ24 BUZ74A SIEMENS BSS92 BUZ41A
    Text: - 314 - f M % tt € BSS92 6SS100 BSStOI SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS P N N BUZ6Û BUZ64 BUZZI BUZ72A BUZ73A BUZ74A BUZ76A BUZ80 8UZ211 2N6659 2N6660 2N6661 2N6TS5 2N67 56 f- SIEMENS SIEMENS SIEMENS SIEMENS


    OCR Scan     		PDF SSS6N60 O-220 8SS89 BSS92 8SS100 T0-204AA 2N6659 O-205AF 2N6660 4900 SIEMENS 2N6155 BUZ211 BUZ54 BUZ11 BUZ24 BUZ74A SIEMENS BUZ41A

    BUZ54

    Abstract: No abstract text available
    Text: P o w e r M O S t r a n s i s t o r _B U Z 5 4 _ N AMER PHILIPS/DISCRETE ^ ObE D • ^53=131 D014717 5 ■ ^ J - 3 1 -1 3 Jul y 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a


    OCR Scan     		PDF BUZ54 bhS3T31 D014717 JBUZ54 T-39-13 BUZ54

    transistor f6 13003

    Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
    Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.


    OCR Scan     		PDF SC08b transistor f6 13003 equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350

    IRF 544 N MOSFET

    Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
    Text: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no


    OCR Scan     		PDF

    2N6155

    Abstract: BUZ24 4900 SIEMENS BUZ10 buz90 buzh bup 314 BUZ11 F133 251C
    Text: - 272 - m % f m * £ fê Ta=25,C Vg s t Vd s or Vd g (V) (V) *± £ V ÎD Pd %i * /CH * /CH (A) (W) (nA) Vg s th) Id s s ÎGSS Vg s (V) BS1Ü7A MOT N 200 ±20 0.25 0.6 10 15 BS170 MOT N 60 ±20 0.5 0.83 10 15 BSS123 MOT N 100 ±20 0.17 0.55 50 20 BUZ11 MOT


    OCR Scan     		PDF BSI07A O-226kk BS170 O-226AA BSS123 O-236AA O-220AB BUZ171 O-220ftB irf120 2N6155 BUZ24 4900 SIEMENS BUZ10 buz90 buzh bup 314 BUZ11 F133 251C

    FET BFW10

    Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
    Text: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI


    OCR Scan     		PDF BA220 BA221 BA223 BA281 BA314 BA315 BA316 BA317 BA318 BA423 FET BFW10 KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11

    1N7001

    Abstract: 2N6155 4900 SIEMENS 1N7000 BUZ54 2N6759 2n6800 2N6823 BUZ211 IXTP4N90
    Text: - 248 - f M € tt € ft * V 2N6755 2N6756 2N6757 2N6758 2N6759 2N6Ï6Û 2N6761 2N6762 2K6763 2N6764 2N6765 2N6766 2N6767 2N6768 2N6769 2N6770 2N6782 2N6784 2Ü6736 2N6788 2N679Û 2N6792 2N6794 2N6796 2K6798 2N6800 2N6802 2N6804 2N6806 2N6845 IR IR IR IR


    OCR Scan     		PDF 2N6755 T0-204AA 2N6756 O-204AA 2N6757 2N6758 2N6659 O-205AF 1N7001 2N6155 4900 SIEMENS 1N7000 BUZ54 2N6759 2n6800 2N6823 BUZ211 IXTP4N90

    BUZ54A

    Abstract: t03 package transistor pin dimensions T-39-13 transistor BUZ54 IEC134 T3913 C413N 4-10N
    Text: N AMER PHI LI PS /D IS CR ET E übE D P o w e r M O S transistor " • ^53=131 0014724 S B U Z 54A T - 2 ^ -/3 July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF BUZ54A 7Z63885 bbS3T31 0D14751 T-39-13 BUZ54A t03 package transistor pin dimensions T-39-13 transistor BUZ54 IEC134 T3913 C413N 4-10N

    2SK955

    Abstract: 2SK565 2SK566 2SK783 BUZ64 2sk903 2SK566A BUZ357 2SK726 2SK727
    Text: 19875 6 SIPMOS-FET ± m ^ - K ÍK T p f. « ' . a ä I I / ^ s í : 7^ ' ,. A ¡£ fé R ds .O N Cs • jiE-tyets^ Al’«. 1 S H H S H h | /S~_ 19 12 80 0.25 0.3 ECONOFET T0220 25 20 125 0.11 0.15 ECONOFET T03P N 37 30 150 0.07 0.1 ECONOFET T03P BUZ76A


    OCR Scan     		PDF 2SK900 T0220 2SK901 2SK902 BUZ76A BUZ60 BUZ64 BUZ74A 2SK955 2SK565 2SK566 2SK783 2sk903 2SK566A BUZ357 2SK726 2SK727

    BUZ54

    Abstract: s 271 5A BUZ357 BUZ84A BUZ,271 C67078-S1318-A2 BUZ54A C67078-S1010-A3 C67078-S1010-A2
    Text: SIEM EN S SIPMOS" Leistungstransistoren SIPMOS Power Transistors N-Kanal-Anreicherungstypen N channel enhancement types Typ Type Wds V n ¡o A ^D S on m ax Ptot W Bestellnummer Ordering code Gehäuse Package Bild Figure BUZ 78 800 8.0 1.5 40 C67078-S1318-A2


    OCR Scan     		PDF BUZ80A BUZ84A BUZ53A BUZ54A Orderin04 O-204 T0-218 O-218AA O-218 BUZ54 s 271 5A BUZ357 BUZ,271 C67078-S1318-A2 C67078-S1010-A3 C67078-S1010-A2