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    SICK AG BGA-23110064

    T PRO 11 064
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    SICK AG BGA-23110010

    T PRO 11 010
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    SICK AG BGA-23210010

    T PRO 21 010
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    SICK AG BGA-23110003

    T PRO 11 003
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    T PRO 11 024
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    BGA23 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Type PDF
    BGA231L7E6327 Infineon Technologies RF Amplifiers, RF/IF and RFID, IC AMP LNA SIGE GPS TSLP-7 Original PDF
    BGA231L7E6327XTSA1 Infineon Technologies RF/IF and RFID - RF Amplifiers - IC RF AMP GPS 1575.42MHZ TSLP7-1 Original PDF
    BGA231N7E6327XTSA2 Infineon Technologies RF Amplifiers, RF/IF and RFID, IC AMP LNA SIGE GPS TSLP-7 Original PDF
    BGA231N7E6330 Infineon Technologies RF Amplifiers, RF/IF and RFID, IC AMP LNA SIGE GPS TSLP-7 Original PDF
    BGA231N7E6330XTSA1 Infineon Technologies RF/IF and RFID - RF Amplifiers - IC AMP LNA SIGE GPS TSLP-7 Original PDF

    BGA23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SMD MARKING CODE f2

    Abstract: No abstract text available
    Text: BGA231N7 Silicon Germanium GNSS Low Noise Amplifier Data Sheet Revision 1.0, 2013-01-29 RF & Protection Devices Edition 2013-01-29 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer


    Original     		PDF BGA231N7 SMD MARKING CODE f2

    Untitled

    Abstract: No abstract text available
    Text: BGA231L7 Silicon Germanium GPS Low Noise Amplifier Data Sheet Revision 3.0, 2011-04-20 RF & Protection Devices Edition 2011-04-20 Published by Infineon Technologies AG 81726 Munich, Germany 2011 Infineon Technologies AG All Rights Reserved. Legal Disclaimer


    Original     		PDF BGA231L7

    SF-BGA238A-B-11

    Abstract: No abstract text available
    Text: D Package Code: BGA238A C 16.51mm [0.650"] See BGA pattern code to the right for actual pattern layout Y X 20.32mm [0.800"] Top View reference only 1.27mm [0.050"] 2 0.36mm [0.014"] dia. 5.33mm 3.74mm [0.147"] [0.210"] Ø 0.64mm pad [Ø 0.025"] B 1 Top View: Recommended PCB Layout


    Original     		PDF BGA238A FR4/G10 SF-BGA238A-B-11

    Untitled

    Abstract: No abstract text available
    Text: BGA231L7 Silicon Germanium GPS Low Noise Amplifier Data Sheet Revision 3.0, 2011-04-20 RF & Protection Devices Edition 2011-04-20 Published by Infineon Technologies AG 81726 Munich, Germany 2011 Infineon Technologies AG All Rights Reserved. Legal Disclaimer


    Original     		PDF BGA231L7

    Untitled

    Abstract: No abstract text available
    Text: BGA231N7 Silicon Germanium GNSS Low Noise Amplifier Data Sheet Revision 1.0, 2013-01-30 RF & Protection Devices Edition 2013-01-30 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer


    Original     		PDF BGA231N7

    nec 575

    Abstract: 484-pin BGA NEC C 324 C jedec tray BGA 324-PIN tray datasheet bga JEDEC tray standard tray bga TRAY DIMENSIONS TRAY CONTAINER
    Text: TRAY CONTAINER UNIT : mm 5x12=60 PPE 135°C MAX. 16.95 25.50 23.25 BGA23×23ESP NEC 102.0 A' 25.50 135.9 A 23.25 17.25 280.5 315.0 322.6 Section A – A' 23.25 (6.07) (6.35) 7.62 23.00 Applied Package Quantity (pcs) 324-pin Plastic BGA (23×23) 352-pin Plastic BGA (23×23)


    Original     		PDF BGA23 23ESP 324-pin 352-pin 484-pin 575-pin SSD-A-H7317-4 nec 575 484-pin BGA NEC C 324 C jedec tray BGA tray datasheet bga JEDEC tray standard tray bga TRAY DIMENSIONS TRAY CONTAINER

    SAMSUNG MCP

    Abstract: ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor
    Text: Preliminary MCP MEMORY KBB0xB400M Document Title Multi-Chip Package MEMORY 64M Bit 8M x8/4M x16 Dual Bank NOR Flash *2 / 256M Bit (16Mx16) NAND Flash / 64M Bit (4Mx16) UtRAM Revision History Revision No. History 0.0 Initial Draft (64M NOR Flash M-die_rev1.1)


    Original     		PDF KBB0xB400M 16Mx16) 4Mx16) 80-Ball 80x12 SAMSUNG MCP ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor

    Untitled

    Abstract: No abstract text available
    Text: K8D6x16UTM / K8D6x16UBM FLASH MEMORY Document Title 64M Bit 8M x8/4M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft January 10, 2002 Preliminary 1.0 Final Specification May 22, 2002 Final 1.1 Revised


    Original     		PDF K8D6x16UTM K8D6x16UBM 48TSOP1 16M/16M 08MAX

    SAMSUNG MCP

    Abstract: samsung K5 MCP BA35 BA4110 ba4410 BA651 Flash Memory SAMSUNG k5
    Text: Preliminary MCP MEMORY K5A3x40YT B B Document Title Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM Revision History Revision No. History 0.0 Initial Draft Draft Date Remark February 22, 2002 Preliminary


    Original     		PDF K5A3x40YT 4Mx8/2Mx16) 512Kx8/256Kx16) 512tRDR 69-Ball 08MAX SAMSUNG MCP samsung K5 MCP BA35 BA4110 ba4410 BA651 Flash Memory SAMSUNG k5

    Untitled

    Abstract: No abstract text available
    Text: RF & Protection Devices Board Name BFP 540ESD Evalboard Products Description Order No. BFP 540ESD A low-cost, low-current broadband UHF low noise amplifier with the ESD-robust BFP 540ESD RF transistor. BFP540ESD board This board shows the ESD-robust BFR 460L3 board in ISM and


    Original     		PDF 540ESD 540ESD BFP540ESD 460L3 BFR460L3 434MHz BFP460 360L3 340L3

    PB-BGA256J-Z-01

    Abstract: SF-BGA256J-B-01 SF-BGA232A-B-01
    Text: U.S. PATENT 6,351,392 78.64mm [3.096"] 2.54mmtyp. [0.100"] 19.23mm [0.757"] 50.8mm [2.000"] Top View 1 * This height variable depends on the screw position. * 2 9.97mm [0.393"] 12.6mm [0.496"] 6mm [0.236"] Side View For Probing BGA256J use SF-BGA256J-B-01


    Original     		PDF 54mmtyp. BGA256J SF-BGA256J-B-01 BGA232A SF-BGA232A-B-01 FR4/G10 16x16 PB-BGA256J-Z-01 SF-BGA256J-B-01 SF-BGA232A-B-01

    Bluetooth Jammer

    Abstract: BAND13 LTE Receiver BGA231L7 gps transmitter block diagram 827mhz murata LTE saw filter
    Text: B GA 23 1L 7 Impro vi ng I mmuni t y of B GA 23 1L7 agains t O ut - Of -B an d J a m me r s LT E Ban d -1 3, G S M85 0/9 00/18 00, U MT S, WLA N Applic atio n N ote A N 273 Revision: Rev. 1.0 2011-09-08 RF and P r otecti on D evic es Edition 2011-09-16 Published by


    Original     		PDF H1605 BGA231L7 AN273, AN273 Bluetooth Jammer BAND13 LTE Receiver BGA231L7 gps transmitter block diagram 827mhz murata LTE saw filter

    BGA676

    Abstract: BGA665 BGA-1156 156 QFN 12X12 LGA240 BGA-783 BGA441 BGA1024 BGA1521 7286X
    Text: Ironwood Electronics Appendix A AP-A.1 APPENDIX A • BGA Chip Package Specification Tables . . . . . . . .page AP.2 thru AP.16 • LGA Chip Package Specification Table . . . . . . . . . . . . . . . . .page AP.17 • MLF Package Specification Table . . . . . . . . . . . . . . . . . . . . .page AP.18


    Original     		PDF BGA16A1ATTERNS BGA676 BGA665 BGA-1156 156 QFN 12X12 LGA240 BGA-783 BGA441 BGA1024 BGA1521 7286X

    BA100 diode

    Abstract: BA115 BA116 BA961 SAMSUNG MCP ba841 ba7 transistor BA124 BA127 BA133 diode
    Text: KADxx0300B - Txxx MCP MEMORY Document Title Multi-Chip Package MEMORY 128M Bit Two Dual Bank 64M Bit NOR Flash Memory / 32M Bit (2Mx16) UtRAM Revision History Revision No. History Draft Date Remark August 9, 2002 Preliminary 0.0 Initial Draft 0.1 Revised (UtRAM)


    Original     		PDF KADxx0300B 2Mx16) 69-Ball 10MAX BA100 diode BA115 BA116 BA961 SAMSUNG MCP ba841 ba7 transistor BA124 BA127 BA133 diode

    Flash Memory SAMSUNG k5

    Abstract: SAMSUNG MCP samsung k5 mcp ba43 ba4410 MCP Electronics Samsung K5 Samsung K5 BA6411 BA4210
    Text: Preliminary MCP MEMORY K5A3x80YT B B Document Title Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 8M(1Mx8/512Kx16) Full CMOS SRAM Revision History Revision No. History 0.0 Initial Draft Draft Date Remark February 22, 2002 Preliminary


    Original     		PDF K5A3x80YT 4Mx8/2Mx16) 1Mx8/512Kx16) 69-Ball 08MAX Flash Memory SAMSUNG k5 SAMSUNG MCP samsung k5 mcp ba43 ba4410 MCP Electronics Samsung K5 Samsung K5 BA6411 BA4210

    BGT24MTR11

    Abstract: AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586
    Text: Selection Guide RF & Protection Devices www.infineon.com/rfandprotectiondevices 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 9 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters


    Original     		PDF 24GHz BF517 BF770A BF771 BF799 BF799W BFP181 BFP182 BFP182R BFP182W BGT24MTR11 AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586

    ba4410

    Abstract: Samsung MCP Flash Memory SAMSUNG k5 dual diode BA45 BA6511 samsung MCP K5 BA40 BA-36 BA5111 bga221
    Text: K5A3x41YT B A MCP MEMORY Document Title Multi-Chip Package MEMORY 32M Bit (2Mx16) Dual Bank NOR Flash Memory / 4M(256Kx16) Full CMOS SRAM Revision History Revision No. History Draft Date Remark Preliminary 0.0 Initial Draft August 28, 2001 1.0 Final Specification


    Original     		PDF K5A3x41YT 2Mx16) 256Kx16) 66-Ball 80x11 08MAX ba4410 Samsung MCP Flash Memory SAMSUNG k5 dual diode BA45 BA6511 samsung MCP K5 BA40 BA-36 BA5111 bga221

    samsung k5 mcp

    Abstract: SAMSUNG MCP A3240 Flash Memory SAMSUNG k5
    Text: K5A3x40YT B A MCP MEMORY Document Title Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM Revision History Revision No. History Draft Date Remark Preliminary 0.0 Initial Draft August 28, 2001 1.0


    Original     		PDF K5A3x40YT 4Mx8/2Mx16) 512Kx8/256Kx16) 69-Ball 08MAX samsung k5 mcp SAMSUNG MCP A3240 Flash Memory SAMSUNG k5

    SAMSUNG MCP

    Abstract: Flash Memory SAMSUNG k5 samsung K5 MCP A3280 A3380
    Text: K5A3x80YT B B MCP MEMORY Document Title Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 8M(1Mx8/512Kx16) Full CMOS SRAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft February 22, 2002 Preliminary 1.0


    Original     		PDF K5A3x80YT 4Mx8/2Mx16) 1Mx8/512Kx16) 69-Ball 08MAX SAMSUNG MCP Flash Memory SAMSUNG k5 samsung K5 MCP A3280 A3380

    SAMSUNG MCP

    Abstract: Flash Memory SAMSUNG k5 A3240 BA35 samsung K5 MCP ba4410
    Text: K5A3x40YT B B MCP MEMORY Document Title Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft February 22, 2002 Preliminary 1.0


    Original     		PDF K5A3x40YT 4Mx8/2Mx16) 512Kx8/256Kx16) 69-Ball 08MAX SAMSUNG MCP Flash Memory SAMSUNG k5 A3240 BA35 samsung K5 MCP ba4410

    BA17

    Abstract: K8D3216UT K8D3216
    Text: K8D3x16UTC / K8D3x16UBC FLASH MEMORY Document Title 32M Bit 4M x8/2M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark Preliminary 0.0 Initial Draft June 18, 2002 1.0 Final Specification November 13, 2002 1.1 Not support 48TSOP1 Package


    Original     		PDF K8D3x16UTC K8D3x16UBC 48TSOP1 16M/16M 48FBGA 08MAX BA17 K8D3216UT K8D3216

    BA114

    Abstract: BA107 samsung ba92 BA122
    Text: K8D6x16UTM / K8D6x16UBM FLASH MEMORY Document Title 64M Bit 8M x8/4M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft January 10, 2002 Preliminary 1.0 Final Specification May 22, 2002 Final 1.1 Revised


    Original     		PDF K8D6x16UTM K8D6x16UBM 48TSOP1 16M/16M 48FBGA 047MAX BA114 BA107 samsung ba92 BA122

    48FBGA

    Abstract: BGA24 ba3101 BA4910 ba4410 BA4111
    Text: K8D3x16UTC / K8D3x16UBC FLASH MEMORY Document Title 32M Bit 4M x8/2M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark Preliminary 0.0 Initial Draft June 18, 2002 1.0 Final Specification November 13, 2002 1.1 Not support 48TSOP1 Package


    Original     		PDF K8D3x16UTC K8D3x16UBC 48TSOP1 16M/16M 48FBGA 08MAX BGA24 ba3101 BA4910 ba4410 BA4111

    Untitled

    Abstract: No abstract text available
    Text: P-BGA2304-5050-1.00AZF Uniti nn Feb,2004


    OCR Scan     		PDF P-BGA2304-5050-1 00AZF