BF966S
Abstract: BF966SA BF966SB
Text: BF966S N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixerstages especially for UHF-tuners. Features D High AGC-range D Low feedback capacitance D Low input capacitance
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BF966S
BF966S
D-74025
23-Jan-97
BF966SA
BF966SB
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BF966
Abstract: No abstract text available
Text: BF966S VISHAY Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3 Features • • • • • • 4 Integrated gate protection diodes High cross modulation performance Low noise figure High AGC-range Low feedback capacitance
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BF966S
BF966S
D-74025
20-Aug-04
BF966
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TO50 package
Abstract: BF966 BF966S
Text: BF966S Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3 Features • • • • • • • • 4 Integrated gate protection diodes High cross modulation performance e3 Low noise figure High AGC-range Low feedback capacitance
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BF966S
2002/95/EC
2002/96/EC
BF966S
BF966SA
BF966SB
BF966d
D-74025
TO50 package
BF966
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2804SLS2
Abstract: BF966 BF966S BF966SA BF966SB
Text: BF966S Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages especially UHF-tuners. Features D Integrated gate protection diodes
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PDF
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BF966S
BF966S
D-74025
20-Jan-99
2804SLS2
BF966
BF966SA
BF966SB
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BF966S
Abstract: BF966SA BF966SB 0V128
Text: BF966S Vishay Semiconductors N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages especially UHF-tuners. Features D Integrated gate protection diodes
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Original
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PDF
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BF966S
BF966S
D-74025
20-Jan-99
BF966SA
BF966SB
0V128
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BF966
Abstract: BF966S BF966SA BF966SB
Text: BF966S N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixerstages especially for UHF-tuners. Features D Integrated gate protection diodes D High cross modulation performance
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Original
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PDF
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BF966S
BF966S
D-74025
23-Jan-97
BF966
BF966SA
BF966SB
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BF966SA
Abstract: BF966S BF966 BF966SB TO50 package MA1300
Text: BF966S Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3 Features • • • • • • 4 Integrated gate protection diodes High cross modulation performance Low noise figure High AGC-range Low feedback capacitance Low input capacitance
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BF966S
BF966SA
BF966SB
BF966SA
BF966S
D-74025
BF966
BF966SB
TO50 package
MA1300
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Untitled
Abstract: No abstract text available
Text: BF966S VISHAY Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3 Features • • • • • • 4 Integrated gate protection diodes High cross modulation performance Low noise figure High AGC-range Low feedback capacitance
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Original
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PDF
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BF966S
BF966S
D-74025
20-Aug-04
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BF966
Abstract: No abstract text available
Text: BF966S VISHAY Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3 Features • • • • • • 4 Integrated gate protection diodes High cross modulation performance Low noise figure High AGC-range Low feedback capacitance
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Original
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PDF
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BF966S
BF966S
D-74025
03-Sep-04
BF966
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BF966S
Abstract: BF966SA BF966SB
Text: BF966S Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages especially UHF-tuners. Features D Integrated gate protection diodes
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Original
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PDF
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BF966S
BF966S
D-74025
20-Jan-99
BF966SA
BF966SB
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BF966S
Abstract: BF966 BF966SA BF966SB TO50 package
Text: BF966S Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3 Features • • • • • • • • 4 Integrated gate protection diodes High cross modulation performance e3 Low noise figure High AGC-range Low feedback capacitance
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Original
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BF966S
2002/95/EC
2002/96/EC
08-Apr-05
BF966S
BF966
BF966SA
BF966SB
TO50 package
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BF963
Abstract: 1N4004 SOD-123 BC547 smd BB409 2n2907 smd BAT16-046 1N4148 2N2907 SOT-23 1N4148 SOD-123 2n2222 smd
Text: Cross Reference Leaded Devices SMD-Packages SOD-123 1N4001 1N4002 1N4003 1N4004 1N4001 2x 1N4002 (2x) 1N4003 (2x) 1N4004 (2x) 1N4148 1N4148 (2x) SOD-323 SCD-80 SOT-23 SOT-323 SOT-343 SOT-363 SCT-595 BAW 78 M BAS 16-02W BAS 16-03W BAS16 BAL/BAR74 BAL/BAR99
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OD-123
1N4001
1N4002
1N4003
1N4004
1N4148
BF963
1N4004 SOD-123
BC547 smd
BB409
2n2907 smd
BAT16-046
1N4148
2N2907 SOT-23
1N4148 SOD-123
2n2222 smd
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S852T
Abstract: BF579 T0-50 BF964S BF96 BFP183T
Text: Tem ic Semiconduct ors Selector Guide Dual-Gate Si-MOSFETs N-Channel Depletion Mode Number BF961 BF964S BF966S BF988 BF994S BF995 BF996S BF998 S525T S888T VD5 V 20 20 20 12 20 20 20 12 20 10 lümax mA 30 30 30 30 30 30 30 30 30 20 Iy2isl at Ids mA mS 15
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BF961
BF964S
BF966S
BF988
BF994S
BF995
BF996S
BF998
S525T
S888T
S852T
BF579
T0-50
BF96
BFP183T
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BF966S
Abstract: transistor BG 23
Text: 7 1 1 DÖ2 b 0 0 1 3 7 5 4 2 b l 3 M PHIN BF966S SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package w ith source and substrate interconnected, intended fo r u.h.f. applications in television tuners and professional communication equipment.
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711002b
BF966S
7Z80878
0Db754fci
BF966S
transistor BG 23
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dual-gate
Abstract: No abstract text available
Text: Philips Semiconductors Short-form product specification Silicon N-channel dual-gate MOS-FET BF966S APPLICATIONS • UHF applications in television tuners and professional communications equipment. DESCRIPTION Depletion type field-effect transistor in a plastic X-package
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BF966S
dual-gate
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Untitled
Abstract: No abstract text available
Text: BF966S v m rn r ▼ Vishay Telefunken N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode E lectrostatic sensitive device. O bserve precautions fo r handling. A Applications Input- and m ixer stages especially U H F-tuners. Features • Integrated gate protection diodes
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BF966S
BF966S
20-Jan-99
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Untitled
Abstract: No abstract text available
Text: BF966S _ J v _ SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package with source and substrate interconnected, intended fo r u.h.f. applications in television tuners and professional communication equipment.
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BF966S
bbS3331
003ST36
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BF966S
Abstract: No abstract text available
Text: Tem ic BF966S S e m i c o n d u c t o r s N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. ^ Applications Input- and mixerstages especially for UHF-tuners. Features • Integrated gate protection diodes
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BF966S
BF966S
23-Jan-97
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transistor BG 23
Abstract: BF966S
Text: b3E J> m bbSBTSM 007430D b4T « S I C 3 BF966S J NAPC/PHILIPS SEHICOND FOR D E T A ILE D IN FO R M A TIO N SEE THE LATEST ISSUE OF HANDBO OK SC07 OR DATASHEET SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package w ith source and substrate interconnected,
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BF966S
transistor BG 23
BF966S
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buz90af
Abstract: P7NB60FP P4NB80FP P6N60 P5NB60FP 2SK30A buz91a 2SK2645 BUZ100 2SK163
Text: _ HHTEPTEKC Ten: 495 739-09-95, 644-41-29 TpaH3MCTopw N-FET copTMpoBKa no HanpflweHMro U DS Kofl: 2SK192 2SK212 2SK241 BF960 BF961 BF964 BF966S BF981 BF996 2N3819 2N5457 2SK125 BFR31 J309 J310 2N4416 BF245A BF245B BF245C BF256A BF256B J111 J112 2N4391
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2SK192
2SK212
2SK241
BF960
BF961
BF964
BF966S
BF981
OT103
BF996
buz90af
P7NB60FP
P4NB80FP
P6N60
P5NB60FP
2SK30A
buz91a
2SK2645
BUZ100
2SK163
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CFY19
Abstract: CFY19-18 CFY19-22 BF995 BF963 CFY10 BF961 BF964S BF965 CFY65-14
Text: Microwave, RF & Tuner Transistors For complete package outlines, refer to pages PO-1 through PO-6 MOS Field Effect Transistors " BF961 BF963 BF964S BF965 BF966S BF988 BF987 Triode V DS V ^DS niA Pt mW 20 20 20 20 20 12 20 30 50 30 30 30 30 30 200 200 200
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E35bOS
DD45427
BF961
BF995
BF963
BF993
BF964S
BF994S
BF965
BF997
CFY19
CFY19-18
CFY19-22
BF995
CFY10
CFY65-14
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s525
Abstract: s918 BF988 bfr96ts S858TA3 BF-970 BFP183T
Text: Tem ic Semiconductors General Information Alphanumeric Index Type. T ype . Type. Type . BFR90A 9, 243 S593T 8, 105 BFR91 9, 250 S594T 8, 112 9, 163 BFR91A . . . . 9, 256 S595T 8, 119 BFP81 9, 173 BFR92 S822T 9, 338 8. 52
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BF569
BF579
BF961
BF964S
BF966S
BF970
BF979
BF988
BF994S
BF995
s525
s918
bfr96ts
S858TA3
BF-970
BFP183T
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CFY19-22
Abstract: CFY19 Dual-Gate* bf981 bf987
Text: "sIEMENS AKTIENGESELLSCHAF bOE I> • SEBSbDS DDS1M7M S34 «SIEfi 'T'dó'M SIEMENS Transistoren Transistors MOS Feldeffekt-Transistoren Type MOS Field-Effect Transistors Maximum Ratings Characteristics TA= 25° C ^ds V ¡d mA P,o. G ps mW dB ' * I' c' ' '
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BF930
BF994S
BF996S
BF998
BF1012
CF739
CF750
OT-143
CFY19-18
CFY19-22
CFY19
Dual-Gate* bf981
bf987
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pj 929 diode picture
Abstract: bf471 A7R SMD Transistor TDA8391 transistor f488 tda8351 pin-compatible tda1000 Germanium drift transistor marking 3U 3T 3C diode germanium transistor
Text: Philips Sem iconductors Semiconductors for Television and Video Systems Contents PART A page SELECTION GUIDE Functional index 5 Numerical index 17 Maintainance list 27 GENERAL Quality 31 Pro Electron type numbering system for Discrete Semiconductors 31 Pro Electron type numbering system for Integrated Circuits
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BA481
SAA7197
SAA7199B
TDA4680
TDA4685
pA733C
LFC02
MEH469
pj 929 diode picture
bf471
A7R SMD Transistor
TDA8391
transistor f488
tda8351 pin-compatible
tda1000
Germanium drift transistor
marking 3U 3T 3C diode
germanium transistor
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