BF966S
Abstract: BF966SA BF966SB
Text: BF966S N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixerstages especially for UHF-tuners. Features D High AGC-range D Low feedback capacitance D Low input capacitance
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Original
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PDF
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BF966S
BF966S
D-74025
23-Jan-97
BF966SA
BF966SB
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TO50 package
Abstract: BF966 BF966S
Text: BF966S Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3 Features • • • • • • • • 4 Integrated gate protection diodes High cross modulation performance e3 Low noise figure High AGC-range Low feedback capacitance
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Original
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PDF
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BF966S
2002/95/EC
2002/96/EC
BF966S
BF966SA
BF966SB
BF966d
D-74025
TO50 package
BF966
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2804SLS2
Abstract: BF966 BF966S BF966SA BF966SB
Text: BF966S Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages especially UHF-tuners. Features D Integrated gate protection diodes
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Original
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PDF
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BF966S
BF966S
D-74025
20-Jan-99
2804SLS2
BF966
BF966SA
BF966SB
|
BF966S
Abstract: BF966SA BF966SB 0V128
Text: BF966S Vishay Semiconductors N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages especially UHF-tuners. Features D Integrated gate protection diodes
|
Original
|
PDF
|
BF966S
BF966S
D-74025
20-Jan-99
BF966SA
BF966SB
0V128
|
BF966
Abstract: BF966S BF966SA BF966SB
Text: BF966S N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixerstages especially for UHF-tuners. Features D Integrated gate protection diodes D High cross modulation performance
|
Original
|
PDF
|
BF966S
BF966S
D-74025
23-Jan-97
BF966
BF966SA
BF966SB
|
BF966SA
Abstract: BF966S BF966 BF966SB TO50 package MA1300
Text: BF966S Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3 Features • • • • • • 4 Integrated gate protection diodes High cross modulation performance Low noise figure High AGC-range Low feedback capacitance Low input capacitance
|
Original
|
PDF
|
BF966S
BF966SA
BF966SB
BF966SA
BF966S
D-74025
BF966
BF966SB
TO50 package
MA1300
|
BF966S
Abstract: BF966SA BF966SB
Text: BF966S Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages especially UHF-tuners. Features D Integrated gate protection diodes
|
Original
|
PDF
|
BF966S
BF966S
D-74025
20-Jan-99
BF966SA
BF966SB
|
BF966S
Abstract: BF966 BF966SA BF966SB TO50 package
Text: BF966S Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3 Features • • • • • • • • 4 Integrated gate protection diodes High cross modulation performance e3 Low noise figure High AGC-range Low feedback capacitance
|
Original
|
PDF
|
BF966S
2002/95/EC
2002/96/EC
08-Apr-05
BF966S
BF966
BF966SA
BF966SB
TO50 package
|
Untitled
Abstract: No abstract text available
Text: BF966S v m rn r ▼ Vishay Telefunken N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode E lectrostatic sensitive device. O bserve precautions fo r handling. A Applications Input- and m ixer stages especially U H F-tuners. Features • Integrated gate protection diodes
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OCR Scan
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PDF
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BF966S
BF966S
20-Jan-99
|
BF966S
Abstract: No abstract text available
Text: Tem ic BF966S S e m i c o n d u c t o r s N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. ^ Applications Input- and mixerstages especially for UHF-tuners. Features • Integrated gate protection diodes
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OCR Scan
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PDF
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BF966S
BF966S
23-Jan-97
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