BDT41BF Search Results

BDT41BF Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
BDT41BF		Philips Semiconductors	Silicon Epitaxial Power Transistors		Original	PDF
BDT41BF		Unknown	Shortform Data and Cross References (Misc Datasheets)		Short Form	PDF
BDT41BF		Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)		Short Form	PDF

BDT41BF Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
NPN Transistor VCEO 80V 100V Abstract: BDT41AF BDT41BF BDT41CF BDT41F Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BDT41F/AF/BF/CF DESCRIPTION •DC Current Gain -hFE = 30 Min @ IC= 0.3A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 40V(Min)- BDT41F; 60V(Min)- BDT41AF 80V(Min)- BDT41BF; 100V(Min)- BDT41CF	Original	BDT41F/AF/BF/CF BDT41F; BDT41AF BDT41BF; BDT41CF BDT42F/AF/BF/CF BDT41F NPN Transistor VCEO 80V 100V BDT41AF BDT41BF BDT41CF BDT41F	PDF
Untitled Abstract: No abstract text available Text: N ANER PHILIPS/DISCRETE ESE D 1^53=131 0011721 T • BDT41F;41AF; BDT41BF;41CF T -33-0? SILICON EPITAXIAL POWER TRANSISTORS NPN silicon epitaxial power transistors, each in a SOT186 envelope with an electrically insulated mounting base. PNP complements are BDT42F, BDT42AF, BDT42BF, and BDT42CF.	OCR Scan	BDT41F BDT41BF OT186 BDT42F, BDT42AF, BDT42BF, BDT42CF. BDT41F	PDF
Untitled Abstract: No abstract text available Text: II N AUER PHILIPS/DISCRETE 2SE D U bb53T31 □□1^737 3 • I J BDT42F; 42AF; BDT42BF; 42CF T-33-/7 SILICON EPITAXIAL POWER TRANSISTORS PNP silicon epitaxial power transistors, each in a SOT186 envelope w ith an electrically insulated mounting base. NPN complements are BDT41F, BDT41AF, BDT41BF, and BDT41CF.	OCR Scan	bb53T31 BDT42F; BDT42BF; T-33-/7 OT186 BDT41F, BDT41AF, BDT41BF, BDT41CF. BDT42F	PDF
BDT42CF Abstract: BDT41BF BDT41F BDT42AF BDT42BF BDT42F 41F 134 41AF 2bdt Text: ^ 5 3 1 3 1 N AMER PHILIPS/DISCRETE H 5 E D 0 0 1 1 7 2 1 I I T BDT41F;41AF; BDT41BF;41CF r-3 ^ -0 ? SILICON EPITAXIAL POWER TRANSISTORS w in a «ÏOT186 e n v e lo p e with an electrically insulated NPN silicon epitaxial power transistors, each m a SOT186 enve p	OCR Scan	BDT41F BDT41BF enT186 OT186 BDT42AF, BDT42BF, BDT42CF. BDT42F, BDT42CF BDT42AF BDT42BF BDT42F 41F 134 41AF 2bdt	PDF
transistor f6 13003 Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350 Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.	OCR Scan	SC08b transistor f6 13003 equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350	PDF
BGY41 Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.	OCR Scan	LCD01 BGY41 BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc	PDF
FET BFW10 Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11 Text: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI	OCR Scan	BA220 BA221 BA223 BA281 BA314 BA315 BA316 BA317 BA318 BA423 FET BFW10 KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11	PDF