1002r4bn
Abstract: APT*1002R4BN APT1002R4BN 1002rbn APT1002RBN
Text: D TO-247 G APT1002RBN S POWER MOS IV 1000V 7.0A 2.00Ω 1002R4BN 1000V 6.5A 2.40Ω N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter Drain-Source Voltage
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APT1002RBN
APT1002R4BN
1002RBN
1002R4BN
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1002r4bn
APT*1002R4BN
1002rbn
APT1002RBN
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1001R6BN
Abstract: APT1001R6BN 1002R4BN APT1002R4BN APT*1002R4BN APT1002RBN
Text: D TO-247 G APT1001R6BN 1000V 8.0A 1.60Ω S POWER MOS IV 1002R4BN 1000V 6.5A 2.40Ω N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter Drain-Source Voltage
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APT1001R6BN
APT1002R4BN
1001R6BN
1002R4BN
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1001R6BN
1002R4BN
APT*1002R4BN
APT1002RBN
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902R4BN
Abstract: APT902RBN APT1002R4BN 1002RBN 1002r4bn APT902R
Text: A D V A N CED PO W ER Tec h n o lo g y O D APT1002RBN APT902RBN 1002R4BN APT902R4BN Ô s H Tw er m o s n a 1000V 900V 1000V 900V 7.0A 7.0A 6.5A 6.5A 2.00U 2.00U 2.400 2.40U N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: T_ = 25°C unless otherwise specified.
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APT1002RBN
APT902RBN
APT1002R4BN
APT902R4BN
902RBN
1002RBN
902R4BN
1002R4BN
APT1002R/902R/1002R4/902R4BN
1002r4bn
APT902R
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APT902R4BN
Abstract: No abstract text available
Text: A dvanced P o w er Te c h n o l o g y ' O D O S POWER MOS IV' AFT1002RBN 1000V 7.0A 2.00Q APT902RBN 900V 7.0A 2.00Q 1002R4BN 1000V 6.5A 2.40Q APT902R4BN 900V 6.5A 2.40Q N -C H A NN EL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified.
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AFT1002RBN
APT902RBN
APT1002R4BN
APT902R4BN
902RBN
1002RBN
902R4BN
1002R4BN
G21bc
APT1002R/902R/1002R4/902R4BN
APT902R4BN
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APT1002R4BN
Abstract: No abstract text available
Text: A D V A N CED PO W E R Te c h n o l o g y OD APT1002RBN OS 1000V 7.0A 2.00Í1 1002R4BN 1000V 6.5A 2.40Í1 POWER MOS IV® N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS b All Ratings: Tc = 25°C unless otherwise specified.
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APT1002RBN
APT1002R4BN
1002RBN
1002R4BN
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Untitled
Abstract: No abstract text available
Text: A d van ced P o w er Te c h n o l o g y • O D O APT1002RBN APT902RBN 1002R4BN APT902R4BN s POWER MOS IVe 1000V 900V 1000V 900V 7.0A 7.0A 6.5A 6.5A 2.00Q 2.00Q 2.40Q 2.40Í2 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tr = 25°C unless otherwise specified.
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APT1002RBN
APT902RBN
APT1002R4BN
APT902R4BN
902RBN
1002RBN
902R4BN
1002R4BN
APT1002R/902R/1002R4/902R4BN
O-247AD
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Untitled
Abstract: No abstract text available
Text: A d v a n ced P o w er Te c h n o l o g y O D APT1002RBNR 1000V 7.0A 2.000 1002R4BNR 1000V 6.5A 2.400 Os POWER MOS IV« UIS RATED N -C H A N N E L E N H A N CEM EN T M O D E HIGH VOLTAGE PO W ER M O SFETS All Ratings: T c = 25°C unless otherwise specified.
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APT1002RBNR
APT1002R4BNR
APT1002R4BNR
MIL-STD-750
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APT1002RBNR
Abstract: No abstract text available
Text: A d van ced P o w er Te c h n o l o g y O D O S APT1002RBNR 1002R4BNR 1000V 7.0A 2.00< > 1000V 6.5A 2.40Q POWER MOS IV UIS RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol ^DSS All Ratings: Tc = 25°C unless otherwise specified.
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APT1002RBNR
APT1002R4BNR
APT1002RBNR
APT1002R4BNR
STD-750
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1002RBN
Abstract: SML1002RBN 1002r4bn 902R4BN
Text: SEMELAB PLC bOE J> m a i3 3 1 fi? 0000tiG4 3fiD * $ 1 1 1 8 T ^ - i S MOS POWER 4 =FF= SML1002RBN 1000V 7.0A 2.00Q SML902RBN 900V 7.0A 2.0012 1002R4BN 1000V 6.5A 2.40Q SML902R4BN 900V 6.5A 2.4012 SEME LAB N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
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0000tiG4
SML1002RBN
SML902RBN
SML1002R4BN
SML902R4BN
1002RBN
902R4BN
1002R4BN
902RBN
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