7805CT
Abstract: MOC5010 ip1717 UA741CN op amp TL081P LM3524N LM13080N 7824ct LM7915CK LM7905CK
Text: Master Designer Version 8.5 Component Library Reference Volume 2 October 1995 All rights reserved. No part of this publication may be reproduced, stored in a retrieval system, or transmitted, in any form or by any means-electronic, mechanical, photocopying, recording, or otherwise-without the prior
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mos 3021
Abstract: IT715 rs 3021 cj marking 133I tes 3012 22-PIN 32-PIN D-10 test ping vdr
Text: M IL -M -3Ò5 1 0 /2 9 2 30 SEPTEMBER 1987 MILITARY SPECIFICATION MICROCIRCUITS, DIGITAL, CMOS, ACCESS MEMORY S R A M , This sp e c ific a tio n is ments and Agencies 1. 65 ,53 6-BIT STATIC RANDOM MONOLITHIC S I L I C O N a p p r o v e d f o r u s e by a l l D e p a r t
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s10/292
536-BIT
536-bit,
MIL-M-38510.
MIL-M-JdS10/2tÃ
mos 3021
IT715
rs 3021 cj
marking 133I
tes 3012
22-PIN
32-PIN
D-10
test ping vdr
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7207 irc
Abstract: AM99C641 AM99C641-25 AM99C641-35 AM99CL641 CD3022
Text: 99C641 / Am99CL641 £1 65,536 x 1 Static Read/Write Random-Access Memory DISTINCTIVE CHARACTERISTICS H igh-perform ance C M O S circuit design and p rocess High Speed - a ccess tim es a s fa st as 25 ns S ingle 5-V ± 1 0 % pow er-supply operation Low pow e r - 550 m W active
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Am99C641
Am99CL641
22-pin
AIS-WCP-10M-7/87-0
7207 irc
AM99C641-25
AM99C641-35
CD3022
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HM6287HLJP-35
Abstract: AKM6287P-55 HM6287HLJP-25 98C64 AKM6287CG-45 AKM6287CG-55 AKM6287LP-55 AKM6287LP-70 AKM6287P-45 AKM6287P-70
Text: - 64 4 K m fi tt fi iältlEIS CC> A 4 TAAC max ns TCAC max (ns) TOE max (ns) CMOS ••/ * TOH sin (ns) > S t a t i c RAM (6 5 5 3 6 x 1 ) TOH max (ns) TWP (ns) TDS min (ns) TDH min (ns) TWD «in (ns) TV'R max (ns.) V D D or V C C (V) 2 2 P I N M It ?" Í# ft
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65536x1)
22PIN6287
AKM6287CG-45
AKM6287CG-55
287CG-70
HM6287LP-55
HM6287LP-70
HM6287P-30
HM6287P-4S
HM6287P/CG-55
HM6287HLJP-35
AKM6287P-55
HM6287HLJP-25
98C64
AKM6287LP-55
AKM6287LP-70
AKM6287P-45
AKM6287P-70
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7207 irc
Abstract: AM99C641 AM99C641-25 AM99C641-35 AM99CL641 CD3022
Text: 99C641 / Am99CL641 £1 65,536 x 1 Static Read/Write Random-Access Memory > DISTINCTIVE CHARACTERISTICS H igh-perform ance C M O S circuit design and p rocess High Speed - a ccess tim es a s fa st as 25 ns S ingle 5-V ± 1 0 % pow er-supply operation Low pow e r - 550 m W active
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Am99C641
Am99CL641
22-pin
AIS-WCP-10M-7/87-0
7207 irc
AM99C641-25
AM99C641-35
CD3022
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KS000010
Abstract: No abstract text available
Text: ADV M C R O {MEtlORYJ f i l S e 025 75 2Ö OÜ2Sfa54 2 | ~ 99C641 / Am99CL641 65,536x1 Static Read/Write Random-Access Memory 0257528 ADV M IC R O M E M O R Y ) 89D 25654 ü T - Ÿ ê 'Z l - o s > 3 DISTINCTIVE CHARACTERISTICS <o <0 • • • • High-performance CMOS circuit design and process
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2Sfa54
Am99C641
Am99CL641
536x1
22-pin
OP002570
OP002580
002Sb71
CLR022*
KS000010
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99C641
Abstract: No abstract text available
Text: 99C641/Am99CL641 LÌ 65,536 x 1 Static Read/Write Random-Access Memory DISTINCTIVE CHARACTERISTICS • • • • H igh-perform ance C M O S circuit High Speed - a ccess tim es a s Single 5-V ± 1 0 % pow er-supply Low pow e r - 550 m W active 110 m W T T L - Standby
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Am99C641/Am99CL641
22-pin
Am99C641
AIS-WCP-10M-7/87-0
99C641
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