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    98531 Search Results

    98531 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    10137985-3131169LF Amphenol Communications Solutions Conan® 1.00mm Connector, Board to Board connector, Vertical Receptacle, Surface Mount, 69 Positions, 1.00mm ( 0.039in) Pitch. Visit Amphenol Communications Solutions
    SF Impression Pixel

    98531 Price and Stock

    Phoenix Contact 1985315

    TERM BLOCK 14POS 45DEG 3.5MM PCB
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    DigiKey 1985315 Bulk 2,298 1
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    Mouser Electronics 1985315 861
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    Sager 1985315 20 60
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    TE Connectivity 109853-1

    BASE, 40 POSITION
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    DigiKey 109853-1 Bulk 289 1
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    Avnet Americas 109853-1 Bulk 896
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    Mouser Electronics 109853-1 467
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    Teledyne FLIR T198531

    BATTERY CHARGER FOR EX SERIES
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    DigiKey T198531 Bulk 3 1
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    Master Electronics T198531
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    Hammond Manufacturing C2F198531BK1

    RACK STEEL 31.5X23X93.1 BLK
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    DigiKey C2F198531BK1 3 1
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    Mouser Electronics C2F198531BK1
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    Powell Electronics C2F198531BK1 2 1
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    Master Electronics C2F198531BK1
    • 1 $925.62
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    JRH Electronics C2F198531BK1

    RACK STEEL 31.5X23X93.1 BLK
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    98531 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    130N30

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 130N30 VDSS = 300 V ID25 = 130 A RDS on = 18 mW trr < 250 ns D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S S Symbol Test Conditions Maximum Ratings VDSS


    Original
    PDF 130N30 125OC Figure10. 130N30

    sd 20n60

    Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80
    Text: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode HiPerFETTM F-Series Contents VDSS max V ID cont RDS(on) TC = 25 °C TC = 25 °C Ω A TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN) ä IXFT 80N06


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    PDF O-247 PLUS247 ISOPLUS247TM O-268 O-264 80N06-11 76N07-11 76N07-12 100N10 170N10 sd 20n60 IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 130N30 D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S S Symbol Test Conditions VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 300


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    PDF 130N30 OT-227 E153432

    DTH circuit diagram

    Abstract: DTH block diagram
    Text: MOULDED CASE CIRCUIT BREAKERS 2 DS Page DTH.E Page DG Page Adjustable Overload & Fixed Short-circuit Fixed Overload & Fixed Short-circuit Fixed Overload & Fixed Short-circuit release with Normal Breaking Capacity release with High Breaking Capacity Technical Data


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    PDF 2/58ROTECTION DTH circuit diagram DTH block diagram

    binary Weighted resistor ladder dac

    Abstract: ladder network ladder Binary Weighted DAC Resistor Ladder
    Text: ISO-9001 Registered Application Note AFD006 R/2R LADDER NETWORKS Written By Jerry Seams References: Copyright 1998 International Resistive Company, Inc. Advanced Film Division Telephone: 512/985-3132 Email: seamsj@irctt.com IRC R/2R Data Sheet IRC QS009 Data Sheet


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    PDF ISO-9001 AFD006 QS009 AFD006/21SEPT98 IRC/AFD006 binary Weighted resistor ladder dac ladder network ladder Binary Weighted DAC Resistor Ladder

    passive component

    Abstract: D1206 process flow diagram
    Text: ISO-9001 Registered Application Note AFD005 CERAMIC OR SILICON? Contact: References: Jerry Seams International Resistive Company, Inc. Advanced Film Division Telephone: 512/985-3132 Email: seamsj@irctt.com PFC Divider D1206 Data Sheet SOT23 Data Sheet SON Series Data Sheet


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    PDF ISO-9001 AFD005 D1206) AFD005/24JUN98 IRC/AFD005 OT-23 passive component D1206 process flow diagram

    IXFN 130N30

    Abstract: 130N30 125OC
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 130N30 VDSS = 300 V ID25 = 130 A RDS on = 18 mW trr < 250 ns D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S S Symbol Test Conditions Maximum Ratings VDSS


    Original
    PDF 130N30 OT-227 E153432 125OC Figure10. IXFN 130N30 130N30 125OC

    alex 10 PIN connector

    Abstract: apex dot 98531 400J
    Text: MODEL MUE: 98531 REV. -132.50±0.30 Backer - FRONT VIEW O rO <N 00 131.90 (PET)- CS tO CO o -0.30 -H -122.90 (Adhesive Opening)- o o — 122.00 (Viewing Area)— ro II -116.17 (Active Area)- o CM n o CONTACT REAR SIDE £ o (TRACE DOWN) S o o o * -H \ 7.00-J


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    PDF 10LEIMNCE5 alex 10 PIN connector apex dot 98531 400J

    Untitled

    Abstract: No abstract text available
    Text: National ÆSA Semiconductor F100131 Triple D Flip-Flop General Description The F100131 contains three D-type, edge-triggered master/ slave flip-flops with true and complement outputs, a Com­ mon Clock CPc , and Master Set (MS) and Master Reset (MR) inputs. Each flip-flop has individual Clock (CPn), Direct


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    PDF F100131 F100331

    Untitled

    Abstract: No abstract text available
    Text: n ix Y S Advanced Technical Information HiPerFET Power MOSFETs Single Die MOSFET IXFN 130N30 VDSS = 300 V 130 A ^D25 R DS on = 18 mQ ” N-Channel Enhancement Mode Avalanche Rated, Highdv/dt, Lowtrr s Maximum Ratings Symbol Test Conditions V v DSS Td = 25°C to 150°C


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    PDF 130N30 OT-227

    F100131

    Abstract: F100331
    Text: F100131 Triple D Flip-Flop General Description The F100131 contains three D-type, edge-triggered master/ slave flip-flops with true and complement outputs, a Com­ mon Clock CPc , and Master Set (MS) and Master Reset (MR) inputs. Each flip-flop has individual Clock (CPn), Direct


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    PDF F100131 F100131 F100331 TL/F/9653-10

    98531

    Abstract: F100131 F100331
    Text: 100131 National Semiconductor F100131 T riple D Flip-Flop General Description The F100131 contains three D-type, edge-triggered master/ slave flip-flops with true and complement outputs, a Com­ mon Clock CPc , and Master Set (MS) and Master Reset (MR) inputs. Each flip-flop has individual Clock (CPn), Direct


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    PDF F100131 F100131 F100331 TL/F/9853-8 TL/F/9853-10 98531

    Untitled

    Abstract: No abstract text available
    Text: DIXYS Advanced Technical Information HiPerFET Power MOSFETs Single Die MOSFET IXFN 130N30 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions v DSS 300 > vD0R Tj =25°Cto150°C T.J =25°Cto150°C; RrGS =1 M ft 300 > Vos


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    PDF IXFN130N30 Cto150 OT-227 E153432

    CE160

    Abstract: No abstract text available
    Text: 7 THIS DRAWING 15 UNPUBLISHED. COPYRIGHT 19 RELEASED FOR PUBLICATION BY AMP INCORPORATED. 4 ,19 LOC ALL RIGHTS RESERVED. DIST CE R E V IS IO N S 16 LTR 1. DESCRIPTION DATE RELEASED PER NPR 98-531 5MAR99 OWN APVD TA KM CLEAR SHRINK WRAP USED TO SEAL EACH EXPANDED BEAM END WITH DUST CAP.


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    PDF 5MAR99 3DEC93 15MAR99 15MAR99 27JUN96 amp34874 /home/amp34874/edmniod CE160