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    976 TRANSISTOR Search Results

    976 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    976 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Issued July 1985 005-976 Data Pack J Data Sheet LinCMOS programmable op-amp RS251 RS stock numbers 630-522 The RS251 is a low minimum supply voltage, low power, programmable op-amp designed to operate on singe or dual supplies. Unlike traditional metal


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    PDF RS251 RS251

    atmel 838

    Abstract: atmel 906 ATMEL 712 atmel 532 ATMEL 706 atmel 751 BGA 168 atmel 635 atmel 344 verilog code for 32 bit risc processor
    Text: Features • High-speed - 100 ps Gate Delay - 2-input NAND, FO = 2 nominal • Up to 6.9 Million Used Gates and 976 Pins • System Level Integration Technology – Cores: ARM7TDMI and AVR RISC Microcontrollers, OakDSP™ and LodeDSPCores™, 10T/100 Ethernet MAC, USB and PCI Cores


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    PDF 10T/100 ATL25 ATL25/44 ATL25/68 1414B 10/99/xM atmel 838 atmel 906 ATMEL 712 atmel 532 ATMEL 706 atmel 751 BGA 168 atmel 635 atmel 344 verilog code for 32 bit risc processor

    atmel 952

    Abstract: atmel h 952 ATL35 vhdl code for flip-flop jk flip flop to d flip flop conversion RTL 204 605 vhdl code for D Flipflop dssb oak dsp AOI222
    Text: Features • High Speed - 150 ps Gate Delay - 2 input NAND, FO=2 nominal • Up to 3.7 Million Used Gates and 976 Pins • System Level Integration Technology ™ ARM7TDMI and AVR RISC Microcontrollers, OakDSP™ and Lode™DSP Cores, 10T/100 Ethernet MAC, USB and PCI Cores,


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    PDF 10T/100 ATL35 atmel 952 atmel h 952 vhdl code for flip-flop jk flip flop to d flip flop conversion RTL 204 605 vhdl code for D Flipflop dssb oak dsp AOI222

    atmel 216

    Abstract: ECL IC NAND CQFP 256 PIN actel Atmel 642 PO22 tri state ATL35 atmel 334 20PCI atmel h 952
    Text: Features • High-speed - 150 ps Gate Delay - 2-input NAND, FO = 2 nominal • Up to 2.7 Million Used Gates and 976 Pins • System Level Integration Technology – Cores: ARM7TDMI and AVR RISC Microcontrollers, OakDSP™ and LodeDSPCores™, 10T/100 Ethernet MAC, USB and PCI Cores


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    PDF 10T/100 ATL35 0802E 10/99/0M atmel 216 ECL IC NAND CQFP 256 PIN actel Atmel 642 PO22 tri state atmel 334 20PCI atmel h 952

    1025460

    Abstract: 7805 UA1044 UA1068 UA1084 UA1100 UA1120 UA1132 UA1144 UA1160
    Text: Features • • • • • • • • • • • • • • • • • High performance ULC family suitable for large-sized CPLDs and FPGAs Conversion to 1,000,000 gates Pin counts to over 976 pins Any pin–out matched due to limited number of dedicated pads


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    52887

    Abstract: UA2044 UA2084 UA2100 UA2120 UA2132 UA2144 UA2160 UA2184 UA2208
    Text: Features • • • • • • • • • • • • • • • • • • • High performance ULC family suitable for large-sized CPLDs and FPGAs Conversions to over 2,000,000 FPGA gates Pin counts to over 976 pins Any pin–out matched due to limited number of dedicated pads


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    PDF

    PO11V5

    Abstract: No abstract text available
    Text: Features • • • • • • • • • • • • • • • • • High performance ULC family suitable for large-sized CPLDs and FPGAs From 40K gates up to 780K gates supported Pin counts to over 976 pins Any pin–out matched due to limited number of dedicated pads


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    PDF 4327D PO11V5

    PO11V5

    Abstract: No abstract text available
    Text: Features • • • • • • • • • • • • • • • • • High performance ULC family suitable for large-sized CPLDs and FPGAs From 40K gates up to 780K gates supported Pin counts to over 976 pins Any pin–out matched due to limited number of dedicated pads


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    PDF 4327E PO11V5

    vhdl code for 8-bit adder

    Abstract: verilog code for DFT hard disk serial ATA Atmel 826 debussy ATL35 vhdl code for flip-flop 8 bit risc microprocessor using vhdl vhdl code cisc processor NOR flash controller vhdl code
    Text: Features • • • • • Available in Gate Array or Embedded Array High-speed, 150 ps Gate Delay, 2-input NAND, FO = 2 nominal Up to 2.7 Million Used Gates and 976 Pins 0.35µ Geometry in up to Four-level Metal System-level Integration Technology – Cores: ARM7TDMI RISC Microprocessor; AVR RISC Microcontroller;


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    PDF 0802F vhdl code for 8-bit adder verilog code for DFT hard disk serial ATA Atmel 826 debussy ATL35 vhdl code for flip-flop 8 bit risc microprocessor using vhdl vhdl code cisc processor NOR flash controller vhdl code

    1414c

    Abstract: atmel 906 atmel 228 8 bit risc microprocessor using vhdl 1557 transistor RC timer vhdl code for dFT 32 point Palm Vein Technology atmel 532 Atmel 918 verilog code for cisc processor
    Text: Features • • • • • Available in Gate Array or Embedded Array High-speed, 100 ps Gate Delay, 2-input NAND, FO = 2 nominal Up to 6.9 Million Used Gates and 976 Pins 0.25µ Geometry in up to Five-level Metal System-level Integration Technology – Cores: ARM7TDMI , ARM920T™, ARM946E-S™ and MIPS64™ 5Kf™ RISC


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    PDF ARM920TTM, ARM946E-STM MIPS64TM 1414C ASIC-08/02 atmel 906 atmel 228 8 bit risc microprocessor using vhdl 1557 transistor RC timer vhdl code for dFT 32 point Palm Vein Technology atmel 532 Atmel 918 verilog code for cisc processor

    TVU0.5B

    Abstract: B-976 transistor ASI10642 transistor 5200 976 transistor 254000
    Text: TVU0.5B NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVU0.5B is Designed for UHF and Television Band IV & V Applications. PACKAGE STYLE .205 4L STUD D FEATURES: A • Common Emitter • PG = 12 dB at 0.5 W/860 MHz • Omnigold Metalization System


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    PDF 8-32UNC 8-32U TVU0.5B B-976 transistor ASI10642 transistor 5200 976 transistor 254000

    ASI10633

    Abstract: MLN2030SS 254000
    Text: MLN2030SS NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .205 4L STUD The ASI MLN2030SS is Designed for D A FEATURES: C • • • Omnigold Metalization System B G E F H #8-32UNC MAXIMUM RATINGS J IC 10 A VCB 60 V VCE 35 V PDISS O O -65 C to +200 C


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    PDF MLN2030SS MLN2030SS 8-32UNC ASI10633 ASI10633 254000

    MRF750

    Abstract: No abstract text available
    Text: MRF750 NPN SILICON RF TRANSISTOR PACKAGE STYLE .205" 4L PILL DESCRIPTION: D The MRF750 is Designed for UHF Large Signal Amplifier Application from 407 to 512 MHz, and 5.0 to 10 V. 3 4 A 2 C 1 FEATURES INCLUDE: B • High Power Gain • Infinite VSWR F G E


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    PDF MRF750 MRF750

    MRF627

    Abstract: MRF-627
    Text: MRF627 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF627 is Designed for Class C, FM Land Mobile and FM Base Applications up to 470 MHz. PACKAGE STYLE .205 4L PILL FEATURES: D • Common Emitter • PG = 13 dB at 0.5 W/470 MHz • Omnigold Metalization System


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    PDF MRF627 MRF627 MRF-627

    5B TRANSISTOR

    Abstract: ASI10642
    Text: TVU0.5B NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .205 4L STUD The ASI TVU0.5B is Designed for D FEATURES: • • • Omnigold Metalization System A C B G E F H MAXIMUM RATINGS #8-32UNC IC 2.0 A VCBO 45 V VCEO 25 V 31.8 W @ TC = 25 C -65 OC to +200 OC


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    PDF 8-32UNC ASI10642 5B TRANSISTOR ASI10642

    ASI10631

    Abstract: MLN2027SS
    Text: MLN2027SS NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .205 4L STUD DESCRIPTION: The ASI MLN2027SS is Designed for D A C FEATURES: • • • Omnigold Metalization System B G E F H #8-32UNC J MAXIMUM RATINGS IC 10 A VCB 60 V VCE 35 V PDISS 140 W @ TC = 25 OC


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    PDF MLN2027SS MLN2027SS 8-32UNC ASI10631 ASI10631

    976 transistor

    Abstract: ASI10625 MLN1030SS
    Text: MLN1030SS NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .205 4L STUD The ASI MLN1030SS is Designed for D A FEATURES: C • • • Omnigold Metalization System B G E F H #8-32UNC MAXIMUM RATINGS J IC 10 A VCB 60 V VCE 35 V inches / mm inches / mm


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    PDF MLN1030SS MLN1030SS 8-32UNC ASI10625 976 transistor ASI10625

    976 transistor

    Abstract: ASI10674
    Text: ULBM0.5 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .205 4L PILL The ASI ULBM0.5 is Designed for D FEATURES: • • • Omnigold Metalization System A C B MAXIMUM RATINGS F IC 0.4 A VCBO 28 V VCEO 12 V G 4.0 V VEBO O PDISS 2.5 W @ TC = 25 C


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    PDF ASI10674 976 transistor ASI10674

    ASI10642

    Abstract: No abstract text available
    Text: TVU0.5B NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVU0.5B is Designed for Television Band IV & V Applications up to 860 MHz. PACKAGE STYLE .205 4L STUD D FEATURES: • Common Emitter • PG = 12 dB at 0.5 W/860 MHz • Omnigold Metalization System


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    PDF 8-32UNC ASI10642

    ASI10641

    Abstract: No abstract text available
    Text: TVU0.5A NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .205 4L STUD The ASI TVU0.5A is Designed for D FEATURES: • • • Omnigold Metalization System A C B G E F H MAXIMUM RATINGS #8-32UNC IC 2.0 A VCBO 45 V VCEO 25 V VEBO 3.5 V J inches / mm


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    PDF 8-32UNC ASI10641 ASI10641

    D965

    Abstract: b098 bd98 d965 hfe BD976 BD980 Q62702-D963 Q62702-D965 Q62702-D967 QQQ4430
    Text: 2SC » • 0235bDS Q0DMM2T fl « S I E G ^ PNP Silicon Darlington Transistors BD 976 BD 978 SIEMENS AKTIEN GE SEL LSC HA F 04429 ßD 98Q BD 976, BD 978, and BD 9 8 0 are epitaxial PNP silicon planar darlington transistors in plastic package similar to TO 202. These darlington transistors are designed for relay


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    PDF 235bQS Q62702-D963 Q62702-D965 Q62702-D967 fl23SbOS QQQ4432 0443Z BD976 T-33-31 BD980 D965 b098 bd98 d965 hfe BD980 Q62702-D967 QQQ4430

    Q4431

    Abstract: No abstract text available
    Text: 2SC » • û235bQS 000442*1 fl ■ SIEficÄ_., PNP Silicon Darlington Transistors BO 976 BD 978 SIEMENS AKTIENGESELLSCHAF 0 ^ 2 9 ßD 980 B D 976, BD 978, and BD 9 8 0 are epitaxial PNP silicon planar darlington transistors in plastic package similar to TO 202. These darlington transistors are designed for relay


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    PDF 235bQS Q4431 T-33-31 100oC; fl235bQS QQQ4432 j-33-31 BD976 BD978 BD980

    Untitled

    Abstract: No abstract text available
    Text: TL601, TL604, TL607, TL610 P-MOS ANALOG SWITCHES D 2161, JUNE 1 976—REVISED OCTOBER 1986 • • Switch ± 10-V Analog Signals I • TTL Logic Capability I • 5- to 30-V Supply Ranges | • Low 100 0 On-State Resistance • High (1011 Q) Off-State Resistance


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    PDF TL601, TL604, TL607, TL610 TL601 TL604 TL610

    74LS29

    Abstract: No abstract text available
    Text: TYPES SN54LS295B, SN74LS295B 4-BIT RIGHT-SHIFT LEFT-SHIFT REGISTERS WITH 3-STATE OUTPUTS O C T O B E R 1 976— R E V IS E D D E C E M B E R SN 54LS295B 'LS296B Offers Three Times the Sink-Current Capability of 'LS295A I OR W PACKAGE S N 7 4 L S 2 9 5 B . . . D, J O R N P A C K A G E


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    PDF SN54LS295B, SN74LS295B LS296B LS295A 54LS295B 74LS29