Untitled
Abstract: No abstract text available
Text: Phototransistors End Look Chip Part Nu mber Material Electrical & Optical Characteristics Wave length p nm Lens Colo r 940(400-1100) BPT-BP0314 940(400-1100) 940(400-1100) 940(400-1100) BPT-BP0334 940(400-1100) AMERICAN BRIGHT Max. Min. Max. 0.65 0.50 30
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BPT-BP0314
BPT-BP1314
BPT-BP2314
BPT-BP0334
BPT-BP1334
BPT-BP2334
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Untitled
Abstract: No abstract text available
Text: Phototransistors End Look Chip Part Nu mber Electrical & Optical Characteristics Wave length p nm Materi al BPT-BP0331 Si-Phototransistor 940(400-1100) BPT-BP1331 940(400-1100) (NPN) BPT-BP2331 940(400-1100) BPT-BP0931 Si-Phototransistor 940(750-1100) BPT-BP1931
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BPT-BP0331
BPT-BP1331
BPT-BP2331
BPT-BP0931
BPT-BP1931
BPT-BP2931
BPT-BP0A31
BPT-BP1A31
BPT-BP2A31
IR-09
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Untitled
Abstract: No abstract text available
Text: Phototransistors Side Look Chip Part Nu mber Materi al BPT-NP03C1 Electrical & Optical Characteristics Wave length p nm Lens Colo r 940(400-1100) Si-Phototransistor BPT-NP13C1 940(400-1100) 940(400-1100) Si-Phototransistor BPT-NP13C2 940(400-1100) AMERICAN BRIGHT
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BPT-NP03C1
BPT-NP13C1
BPT-NP23C2
BPT-NP13C2
BPT-NP03C2
BPT-NP23C1
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Emitter
Abstract: APG2C1-940
Text: APG2C1-940 High Power Single Chip LED APG2C1-940 is a GaAlAs based, high power 940 nm single chip LED in standard emitter package for general application. Specifications • • • • • Structure: GaAlAs Peak Wavelength: 940 nm Optical Output Power: typ. 50 mW
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APG2C1-940
APG2C1-940
Emitter
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BPT-BP2334
Abstract: IR10
Text: Phototransistors End Look Chip Part Nu mber Material Si-Phototransistor 940 400-1100 Water Clear (NPN) 940(400-1100) BPT-BP2314 940(400-1100) BPT-BP0334 Si-Phototransistor BPT-BP1334 Wave length p(nm) Lens Colo r 940(400-1100) BPT-BP0314 BPT-BP1314 Electrical & Optical Characteristics
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BPT-BP0314
BPT-BP1314
BPT-BP2314
BPT-BP0334
BPT-BP1334
BPT-BP2334
BPT-BP2334
IR10
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BPT-BP0A31
Abstract: IR09 BPT-BP0331 BPT-BP2931 BPT-BP1A31
Text: Phototransistors End Look Chip Part Nu mber Electrical & Optical Characteristics Wave length p nm Materi al BPT-BP0331 Si-Phototransistor 940(400-1100) BPT-BP1331 940(400-1100) (NPN) BPT-BP2331 940(400-1100) BPT-BP0931 Si-Phototransistor 940(750-1100) BPT-BP1931
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BPT-BP0331
BPT-BP1331
BPT-BP2331
BPT-BP0931
BPT-BP1931
BPT-BP2931
BPT-BP0A31
IR09
BPT-BP2931
BPT-BP1A31
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BPT-BP0314
Abstract: npn 940 BPT-BP2334
Text: Phototransistors End Look Chip Part Nu mber Material Si-Phototransistor 940 400-1100 Water Clear (NPN) 940(400-1100) BPT-BP2314 940(400-1100) BPT-BP0334 Si-Phototransistor BPT-BP1334 Wave length p(nm) Lens Colo r 940(400-1100) BPT-BP0314 BPT-BP1314 Electrical & Optical Characteristics
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BPT-BP0314
BPT-BP1314
BPT-BP2314
BPT-BP0334
BPT-BP1334
BPT-BP2334
BPT-BP0314
npn 940
BPT-BP2334
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AEC-Q101-REV-C
Abstract: 4233
Text: IR-Lumineszenzdiode 940 nm mit hoher Ausgangsleistung High Power Infrared Emitter (940 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4233 Wesentliche Merkmale • IR-Lichtquelle mit hohem Wirkungsgrad • Niedriger Wärmewiderstand (Max. 9 K/W) • Schwerpunktwellenlänge 940 nm
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JESD22-A114-E
AEC-Q101-REV-C,
AEC-Q101-REV-C
4233
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Untitled
Abstract: No abstract text available
Text: IR-Lumineszenzdiode 940 nm mit hoher Ausgangsleistung High Power Infrared Emitter (940 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4239 Wesentliche Merkmale • IR-Lichtquelle mit hohem Wirkungsgrad • Niedriger Wärmewiderstand (Max. 9 K/W) • Schwerpunktwellenlänge 940 nm
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JESD22-A114-E
AEC-Q101-REV-C,
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SFH4233
Abstract: JS-001-2011
Text: 2013-01-15 High Power Infrared Emitter 940 nm IR-Lumineszenzdiode (940 nm) mit hoher Ausgangsleistung Version 1.0 SFH 4233 Features: Besondere Merkmale: • • • • IR lightsource with high efficiency Low thermal resistance (Max. 9 K/W) Centroid wavelength 940 nm
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JS-001-2011
AEC-Q101-REV-C,
D-93055
SFH4233
JS-001-2011
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AEC-Q101-REV-C
Abstract: SFH4239
Text: 2012-12-03 High Power Infrared Emitter 940 nm IR-Lumineszenzdiode (940 nm) mit hoher Ausgangsleistung Version 1.0 SFH 4239 Features: Besondere Merkmale: • • • • IR lightsource with high efficiency Low thermal resistance (Max. 9 K/W) Centroid wavelength 940 nm
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JS-001-2011
AEC-Q101-REV-C,
D-93055
AEC-Q101-REV-C
SFH4239
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BPT-NP23C1
Abstract: BPT-NP03C1 BPT-NP03C2 BPT-NP13C1 BPT-NP13C2 BPT-NP23C2 npn 940
Text: Phototransistors Side Look Chip Part Nu mber Materi al BPT-NP03C1 BPT-NP13C1 Wave length p nm Lens Colo r 940(400-1100) Si-Phototransistor (NPN) BPT-NP23C1 940(400-1100) Water Clear 940(400-1100) BPT-NP03C2 BPT-NP13C2 Electrical & Optical Characteristics
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BPT-NP03C1
BPT-NP13C1
BPT-NP03C2
BPT-NP23C2
BPT-NP23C1
BPT-NP13C2
IR-13
BPT-NP23C1
BPT-NP03C1
BPT-NP03C2
BPT-NP13C1
BPT-NP13C2
BPT-NP23C2
npn 940
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Untitled
Abstract: No abstract text available
Text: 2013-10-24 High Power Infrared Emitter 940 nm IR-Lumineszenzdiode (940 nm) mit hoher Ausgangsleistung Version 1.1 SFH 4233 Features: Besondere Merkmale: • • • • IR lightsource with high efficiency Low thermal resistance (Max. 9 K/W) Centroid wavelength 940 nm
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JS-001-2011
AEC-Q101-REV-C,
D-93055
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Untitled
Abstract: No abstract text available
Text: IR-Lumineszenzdiode 940 nm mit hoher Ausgangsleistung High Power Infrared Emitter (940 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4239 Wesentliche Merkmale • IR-Lichtquelle mit hohem Wirkungsgrad • niedriger Wärmewiderstand (Max. 9 K/W) • Schwerpunkts-Wellenlänge 940 nm
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JESD22-A114-E
AEC-Q101-REV-C,
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Untitled
Abstract: No abstract text available
Text: Phototransistors Side Look Chip Part Nu mber Materi al BPT-NP03C1 BPT-NP13C1 Wave length p nm Lens Colo r 940(400-1100) Si-Phototransistor (NPN) BPT-NP23C1 940(400-1100) Water Clear 940(400-1100) BPT-NP03C2 BPT-NP13C2 Electrical & Optical Characteristics
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BPT-NP03C1
BPT-NP13C1
BPT-NP23C1
BPT-NP03C2
BPT-NP13C2
BPT-NP23C2
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Untitled
Abstract: No abstract text available
Text: IR-Lumineszenzdiode 940 nm mit hoher Ausgangsleistung High Power Infrared Emitter (940 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4233 Wesentliche Merkmale • IR-Lichtquelle mit hohem Wirkungsgrad • niedriger Wärmewiderstand (Max. 9 K/W) • Schwerpunkts-Wellenlänge 940 nm
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JESD22-A114-E
AEC-Q101-REV-C,
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Untitled
Abstract: No abstract text available
Text: IR-Lumineszenzdiode 940 nm mit hoher Ausgangsleistung High Power Infrared Emitter (940 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4239 Wesentliche Merkmale • IR-Lichtquelle mit hohem Wirkungsgrad • Niedriger Wärmewiderstand (Max. 9 K/W) • Schwerpunktwellenlänge 940 nm
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JS-001-2011;
AEC-Q101-REV-C,
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Untitled
Abstract: No abstract text available
Text: SMB1N-940-02 rev 1.1 22.01.2015 Description SMB1N-940-02 is a surface mount AlGaAs High Power LED with a typical peak wavelength of 940 nm and radiation of 120 mW. It comes in SMD package PA9T with silver plated soldering pads (lead free solderable), copper heat sink, and molded with silicone resin.
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SMB1N-940-02
SMB1N-940-02
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Untitled
Abstract: No abstract text available
Text: epitex Φ5 STEM TYPE LED L850/940/1050-40C00 Opto-Device & Custom LED Lead Pb Free Product – RoHS Compliant L850/940/1050-40C00 multi-wavelength LED ♦Outer dimension (Unit: mm) L850/940/1050-40C consists of an AlGaAs (850, 940nm) and InGaAsP(1050nm) LED
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L850/940/1050-40C00
L850/940/1050-40C
940nm)
1050nm)
1050nm
940nm
850nm
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ML309
Abstract: M151 MI31T MI31TA MI32T MI32TA MI37T MI38T MI51T MIB37T
Text: Infrared Emitting Diodes TYPEE p A.p V f MAX 2 6 1/2 NO. nm TYP (mW) (mA) (V) (mA) MI31T MI31TA 940 880 0.5 2.8 20 20 1.6 1.8 20 20 MI32T MI32TA 940 880 0.5 2.8 20 20 1.6 1.8 MI37T MIB37T 940 940 2.0 2.0 20 20 MI38T MIB38T 940 940 2.0 2.0 MI51T M151 TA 940
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MI31T
MI31TA
MI32T
MI32TA
MI37T
MIB37T
MI38T
MIB38T
1-45a
1-45b
ML309
M151
MI51T
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EL-23F
Abstract: EL1L2 EL23F EL-1L2
Text: g ss Infrared E m itting D iodes E M IT T E R S INFRARED EMITTING DIODES GaAs (Ta=25°C) Type No. ae (deg.) Typ. 100 940 ± 10 1.7 100 940 ;36 100 1.7 100 940 ± 10 15.4 100 1.7 100 940 + 30 2.7 50 1.5 50 940 ±32 2.0 60 1.6 60 940 ±30 0.7 50 1.6 50 940
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EL-23F
EL-302
EL-23F
EL1L2
EL23F
EL-1L2
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Untitled
Abstract: No abstract text available
Text: ' I Case Type EmittingMaterial j ,W a ve ! Len9th j Apeak nm Angle of half sensitivity Case-colour Dimension Fig.-No. i L -9 32 P 3C 940 L-9 3 2 P 3 B T 940 blue-transparent L -5 3 P 3 C 940 water-clear 940 blue-transparent CO 3 mm O o 11 00 7 o0 water-clear
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xc 250
Abstract: XC-55-P XC-01 XC-02 XC-06 XC-1209 XC-55-F XC-940 XC-941 XC-944
Text: HIGH OUTPUT 940 nm INFRARED EMITTERS HIGH OUTPUT 697 nm VISIBLE EMITTERS Plastic Infrared Emitters XC-1209 Low Profile Visible Emitter TO-46 Infrared Emitters XC-940 XC-941 XC-55-F Series Plastic Visible Emitters 697 VISIBLE EMITTERS 940 nm HIGH OUTPUT INFRARED EMITTERS
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XC-1209
XC-940
XC-941
XC-55-F
XC-55-P
XC-01
XC-02
XC-06
XC-1209
xc 250
XC-01
XC-02
XC-06
XC-941
XC-944
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Untitled
Abstract: No abstract text available
Text: Infrared Emitting Diodes nm Po TYP (mw) M I31T 940 1.7 20 1.6 20 Clear transparent M I31TA 880 1.5 20 1.8 20 Clear transparent M I32T 940 1.5 20 1.6 20 Clear transparent M I32TA 880 1.3 20 1.8 20 Clear transparent M I33T 940 4.0 20 1.6 20 Clear transparent
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I31TA
I32TA
-V1IB33T
IB38T
I51TA
IB51T
IB51TA
IB57T-J
IB57TA-J
IB57T-K
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