Untitled
Abstract: No abstract text available
Text: tSENSITRON 120NQ035 120NQ040 120NQ045 SEMICONDUCTOR TECHNICAL DATA DATA SHEET 935, REV. - PLASTIC POWER SCHOTTKY RECTIFIER 35/40/45 V, 120 A Applications: • Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode Features:
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120NQ035
120NQ040
120NQ045
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M2X diode
Abstract: MA3X730 935 schottky diode Diodes MARKING 11 3PIN M2X marking
Text: Schottky Barrier Diodes SBD MA3X730 Silicon epitaxial planar type Unit : mm For UHF mixer + 0.2 2.8 − 0.3 + 0.25 1.45 + 0.1 3 Forward voltage (DC) VF 0.5 V Reverse voltage (DC) VR 5 V Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125
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MA3X730
O-236
SC-59
MA2X707s
M2X diode
MA3X730
935 schottky diode
Diodes MARKING 11 3PIN
M2X marking
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103 capacitor
Abstract: marking GC diode ma2x707 935 schottky diode gc capacitor diode marking Gc GC PIN DIODE
Text: Schottky Barrier Diodes SBD MA2X707 Silicon epitaxial planar type Unit : mm INDICATES CATHODE 1.6 − 0.1 + 0.2 1 • Features • Small forward voltage VF • Optimum for UHF mixer because of its large conversion gain (GC) • Mini type package, allowing downsizing of equipment and
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MA2X707
103 capacitor
marking GC diode
ma2x707
935 schottky diode
gc capacitor
diode marking Gc
GC PIN DIODE
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MA3X730 Silicon epitaxial planar type Unit : mm For UHF mixer + 0.2 2.8 − 0.3 + 0.25 0.65 ± 0.15 1 Reverse voltage (DC) Junction temperature Storage temperature 0.95 + 0.1 0.16 − 0.06 + 0.1 0.1 to 0.3 0.4 ± 0.2 Unit 0 to 0.1
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MA3X730
MA2X707s
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MA2S707
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MA2S707 Silicon epitaxial planar type Unit : mm For UHF mixer 1.60 ± 0.05 Symbol + 0.05 2 0.15 ± 0.05 1 0.6 ± 0.05 0.80 − 0.03 ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low
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MA2S707
MA2S707
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MA2S707 Silicon epitaxial planar type Unit : mm For UHF mixer 1.60 ± 0.05 + 0.05 Forward voltage Junction temperature Storage temperature + 0.05 Rating 0.15 ± 0.05 2 Unit ea s ht e v tp is :// it pa fo na llo so win ni g c. U
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MA2S707
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M2X diode
Abstract: MA3X730
Text: Schottky Barrier Diodes SBD MA3X730 Silicon epitaxial planar type Unit : mm For UHF mixer + 0.2 2.8 − 0.3 + 0.25 0.65 ± 0.15 1.45 0.95 + 0.2 Unit Forward voltage (DC) VF 0.5 V Reverse voltage (DC) VR 5 V Junction temperature Tj 125 °C Storage temperature
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MA3X730
O-236
SC-59
M2X diode
MA3X730
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MA2X707 Silicon epitaxial planar type Unit : mm INDICATES CATHODE + 0.2 1.6 − 0.1 1 • Features • Small forward voltage VF • Optimum for UHF mixer because of its large conversion gain (GC) • Mini type package, allowing downsizing of equipment and
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MA2X707
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103 capacitor
Abstract: MA2X707 marking GC diode
Text: Schottky Barrier Diodes SBD MA2X707 Silicon epitaxial planar type Unit : mm INDICATES CATHODE + 0.2 2 M Di ain sc te on na tin nc ue e/ d 1.6 − 0.1 1 • Features • Small forward voltage VF • Optimum for UHF mixer because of its large conversion gain
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MA2X707
103 capacitor
MA2X707
marking GC diode
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Si7705DN
Abstract: Si7705DN-T1
Text: Si7705DN Vishay Siliconix Single P-Channel 20-V D-S MOSFET With Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) - 20 D TrenchFETr Power MOSFETS: 1.8-V Rated D Ultra-Low Thermal Resistance, PowerPAKr Package with Low 1.07-mm Profile ID (A)
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Si7705DN
07-mm
Si7705DN-T1ent
S-22520--Rev.
27-Jan-03
Si7705DN-T1
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Si7705DN
Abstract: No abstract text available
Text: Si7705DN New Product Vishay Siliconix Single P-Channel 20-V D-S MOSFET With Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) -20 D TrenchFETr Power MOSFETS: 1.8-V Rated D Ultra-Low Thermal Resistance, PowerPAKt Package with Low 1.07-mm Profile
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Si7705DN
07-mm
S-22520--Rev.
27-Jan-03
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03712
Abstract: Si7705DN
Text: Si7705DN New Product Vishay Siliconix Single P-Channel 20-V D-S MOSFET With Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) –20 D TrenchFETr Power MOSFETS: 1.8-V Rated D Ultra-Low Thermal Resistance, PowerPAKt Package with Low 1.07-mm Profile
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Si7705DN
07-mm
S-03712--Rev.
14-May-01
03712
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Untitled
Abstract: No abstract text available
Text: EHAlpha Silicon Beamless Schottky Diodes P/N DME, DMF, DMJ Series Features • For Microwave M IC Assembly & Automated High Volume Manufacturing Lines ■ Mechanically Rugged Design ■ Three Barrier Heights for Optimized Mixer Performance ■ W ide Product Range Series Pair, Ring, Bridge
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025nn)
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S3995
Abstract: SMS3992-00 SMS3994 S3996 SMS1528-00 SMS3991-10 Alpha Industries pin diodes SMS3990 SMS3991-50 MARKING S15
Text: Schottky Mixer and Detector Diodes in EOAlpha Surface Mount Plastic Packages SMS Sériés Features < Æ ° -Æ ^ - For High Volume Commercial Applications Small Surface Mount Packages S0D 323 S O T 23 S 0 T 143 Low Conversion Loss • Tight Parameter Distribution
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180 Degree hybrid ku band
Abstract: No abstract text available
Text: Universal Chip Mixer and Detector SchotUcy Barrier Diodes EBAIph CDX76XX, CME7660 Features • For Microwave M IC Assembly ■ Mechanically Rugged Design Exceeds MIL 883 Wire Bond Specifications for Hybrid Assembly ■ Optimized Barrier Heights for Mixer and Detector
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CDX76XX,
CME7660
AS004L2-11
AT001D3â
AK004M2-11
AS004M1-08
AT001D4-31
AK004R2-11
AS004M1-11
AT001D6-31
180 Degree hybrid ku band
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DMK4058-000
Abstract: DMK-4058 DMK50 DMK2860-000
Text: 03 A lpha GaAs Schottky Barrier Mixer Diodes CMK and DMK Series Features • Low Noise Figure Low Series Resistance ■ Excellent Cutoff, Low Junction Capacitance ■ Ideal for Image Enhancement Mixers ■ Passivated Planar Construction for Reliability X
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MA01801
DMK4058-000
DMK-4058
DMK50
DMK2860-000
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diode super fast
Abstract: No abstract text available
Text: Outline äfWTctf /*1? —r / W M i 7 lJ 7 n ztf'f* - t - K, > 3 7 K, □ - Shindengen has an abundance of power devices, such :, m as bridge diode, super fast recovery diode, schottky K, MOSFETi^pq barrier diode, Muliti-purpose single diode, power transistor
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dmj4317
Abstract: DMF5848 DME3256 DME3040 ka-band mixer DM228 DME3006 DME3124 dmf5848 diode DMF2820
Text: Silicon Beam-Lead and Chip Schottky Barrier Mixer Diodes EHAIph DMB, DME, DMF and DMJ Series Features • Ideal for MIC ■ Low 1/f Noise ■ Low Intermodulation Distortion ■ Low Turn On ■ Hermetically Sealed Packages ■ SPC Controlled Wafer Fabrication
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AS004L2-11
AT001D3â
AK004M2-11
AS004M1-08
AT001D4-31
AK004R2-11
AS004M1-11
AT001D6-31
AK006L1-00
AS004M2-08
dmj4317
DMF5848
DME3256
DME3040
ka-band mixer
DM228
DME3006
DME3124
dmf5848 diode
DMF2820
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METAL DETECTOR circuit
Abstract: DDC4717-024
Text: Zero Bias Silicon Schottky Barrier Detector Diodes EHAlpha CDC, DDC Series Features • Zero Turn On, No Bias Required ■ Low Video Impedance Description Alpha’s series of packaged, beam-lead and chip zero bias Schottky barrier detector diodes are designed for
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circui4579
METAL DETECTOR circuit
DDC4717-024
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DDB3268-000
Abstract: DDB5098-000 DDB4517-006 kaba DDL6672 CDB7619-000
Text: Silicon Schottky Barrier Detector Diodes ESAlpha CDB, DDB Series Features • Low 1/f Noise ■ Bonded Junctions for Reliability ■ Planar Passivated Construction Beam-Lead and Chip Description Alpha packaged, beam-lead and chip Schottky barrier detector diodes are designed for applications
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B24-4579
DDB3268-000
DDB5098-000
DDB4517-006
kaba
DDL6672
CDB7619-000
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Untitled
Abstract: No abstract text available
Text: Silicon Schottky Barrier Detector Diodes CDB, DDB Series Features • Low 1/f Noise ■ Bonded Junctions for Reliability ■ Planar Passivated Construction Beam-Lead and Chip Description Alpha packaged, beam-lead and chip Schottky barrier detector diodes are designed for applications
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Untitled
Abstract: No abstract text available
Text: Universal Chip Mixer and EHA lp h a Detector Schottky Barrier Diodes CDX76XX, CME7660 Features • For Microwave MIC Assembly ■ Mechanically Rugged Design Exceeds MIL 883 Wire Bond Specifications for Hybrid Assembly ■ Optimized Barrier Heights for Mixer and Detector
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CDX76XX,
CME7660
comm69
1E-05
CDC7622
3E-06
1E-11
CDB7619
3E-09
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Untitled
Abstract: No abstract text available
Text: EBAIpha Silicon Beamless Schottky Diodes P/N DME, DMF, DMJ Series Features • For Microwave MIC Assembly & Automated High Volume Manufacturing Lines ■ Mechanically Rugged Design ■ Three Barrier Heights for Optimized Mixer Performance ■ Wide Product Range Series Pair, Ring, Bridge
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025mm)
025Hn>
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SMS1046
Abstract: S1526 SMS3994 SMS3988-00 SMS1532-00 SMS1526-10 SMS1043 SMS1046-00 SMS1535-00 SMS1526-50
Text: .a pfeiiù. - Schottky Mixer and Detector Diodes in E3A lpha Surface Mount Plastic Packages înirnnwiamiiiiiiTTiiïïrrmmmi i nu i h iiii ii'iiiiii'iiiiiiiiiiihi ui^ — ^ SMS Series Features For High Volume Commercial Applications SOD 323 Small Surface Mount Packages
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