103 capacitor
Abstract: MA2X707 marking GC diode
Text: Schottky Barrier Diodes SBD MA2X707 Silicon epitaxial planar type Unit : mm INDICATES CATHODE + 0.2 2 M Di ain sc te on na tin nc ue e/ d 1.6 − 0.1 1 • Features • Small forward voltage VF • Optimum for UHF mixer because of its large conversion gain
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MA2X707
103 capacitor
MA2X707
marking GC diode
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MA2X707 Silicon epitaxial planar type Unit : mm INDICATES CATHODE + 0.2 1.6 − 0.1 1 • Features • Small forward voltage VF • Optimum for UHF mixer because of its large conversion gain (GC) • Mini type package, allowing downsizing of equipment and
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MA2X707
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103 capacitor
Abstract: marking GC diode ma2x707 935 schottky diode gc capacitor diode marking Gc GC PIN DIODE
Text: Schottky Barrier Diodes SBD MA2X707 Silicon epitaxial planar type Unit : mm INDICATES CATHODE 1.6 − 0.1 + 0.2 1 • Features • Small forward voltage VF • Optimum for UHF mixer because of its large conversion gain (GC) • Mini type package, allowing downsizing of equipment and
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MA2X707
103 capacitor
marking GC diode
ma2x707
935 schottky diode
gc capacitor
diode marking Gc
GC PIN DIODE
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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M2X diode
Abstract: MA3X730
Text: Schottky Barrier Diodes SBD MA3X730 Silicon epitaxial planar type Unit : mm For UHF mixer + 0.2 2.8 − 0.3 + 0.25 0.65 ± 0.15 1.45 0.95 + 0.2 Unit Forward voltage (DC) VF 0.5 V Reverse voltage (DC) VR 5 V Junction temperature Tj 125 °C Storage temperature
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MA3X730
O-236
SC-59
M2X diode
MA3X730
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2SC5936
Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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XP06501T
XP06531
XP06545
XP0A554
XP0D873
XP0D874
XP0D875
2SC5936
2SC6073
PANASONIC TRANSISTOR 2SC6073
2sc5929
MN1280
transistor 2SC6073
2SC5936 equivalent
2SC6074
TRANSISTOR 2SC5929
2sc5928
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MA3X730 Silicon epitaxial planar type Unit : mm For UHF mixer + 0.2 2.8 − 0.3 + 0.25 0.65 ± 0.15 1 Reverse voltage (DC) Junction temperature Storage temperature 0.95 + 0.1 0.16 − 0.06 + 0.1 0.1 to 0.3 0.4 ± 0.2 Unit 0 to 0.1
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MA3X730
MA2X707s
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M2X diode
Abstract: MA3X730 935 schottky diode Diodes MARKING 11 3PIN M2X marking
Text: Schottky Barrier Diodes SBD MA3X730 Silicon epitaxial planar type Unit : mm For UHF mixer + 0.2 2.8 − 0.3 + 0.25 1.45 + 0.1 3 Forward voltage (DC) VF 0.5 V Reverse voltage (DC) VR 5 V Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125
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MA3X730
O-236
SC-59
MA2X707s
M2X diode
MA3X730
935 schottky diode
Diodes MARKING 11 3PIN
M2X marking
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