PN4416
Abstract: No abstract text available
Text: TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. N-ChannelJFET High Frequency Amplifier 2N4416/2N4416A /PN4416 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) FEATURES • • • •
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2N4416/2N4416A
/PN4416
2N4416,
PN4416
2N4416A
2N4416/2N4416A
10sec)
PN4416
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HA118070FP
Abstract: ha118070
Text: HA118070/FP • Video Switch with Preamplifier 1 circuit, 2 contacts Features Ordering Information • • • • Type No. Package HA118070 300mil 8-pin plastic DIP HA118070FP 8-pin plastic SOP 5V single supply operation 2 inputs, 2 control inputs 3 gain levels available (0, 6, 10dB)
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HA118070/FP
HA118070
HA118070FP
300mil
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Untitled
Abstract: No abstract text available
Text: RP104x SERIES 150mA ULTRA LOW SUPPLY CURRENT LDO REGULATOR NO.EA-150-131016 OUTLINE The RP104x Series are CMOS-based voltage regulator ICs with high output voltage accuracy, extremely low supply current and low ON-resistance. Each of these ICs consists of a voltage reference unit, an error amplifier,
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RP104x
150mA
EA-150-131016
OT-23-5
SC-82AB
Room403,
Room109,
10F-1,
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PDF
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L493
Abstract: T9249
Text: r-l This is to certify that the evaluation described herein was designed and executed by personnel of Contech Research, Inc. It was performed with the concurrence of Sarntec Corp. who was the test sponsor. All equipment and measuring instruments used during testing were
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MIL-STD-45662,
31-Dee-92
t92498
L493
T9249
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vmi x50
Abstract: lzp 1045
Text: SEPTEMBER 14, 1994 TEST REPORT #94408 QUALIFICATION TESTING FFSD SERIES CONNECTOR SAMTEC CORPORATION APPROVED BY: THOMAS PEEL DIRECTOR OF TEST PROGRAM DEVELOPMENT CONTECH RESEARCH, INC. 1 This is to certify that the evaluation described herein was designed and executed by personnel of Contech Research, Inc.
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MIL-STD-45662,
vmi x50
lzp 1045
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PDF
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sony led tv electronic diagram
Abstract: CXA1691 pj 88 iv AM SW IC cxa1691 Pj 455B BFCFL-455 am sw fm radio printed circuit board pfwe8 SFE10.7MA5 sfu 455b
Text: SONY CXA1691 M/S FM/AM Radio Description C X A 16 91M /S is a one-chip F M /A M radio IC designed C X A 16 91M 2 8 pin S O P Plastic C X A 16 91S 30 pin S D IP (Plastic) for radio-cassette tap e recorders. Features • Small number of peripheral components.
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CXA1691M/S
500mW
CXA1691
CXA1691M
375mil
S0P-2BP-U02
S0P-28P-L021
CXA1691S
400mil
sony led tv electronic diagram
pj 88 iv
AM SW IC cxa1691
Pj 455B
BFCFL-455
am sw fm radio printed circuit board
pfwe8
SFE10.7MA5
sfu 455b
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PDF
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Untitled
Abstract: No abstract text available
Text: B 56 9-97 J210, J211 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR • AUDIO AMPLIFIERS • GENERAL PURPOSE AMPLIFIERS Absolute maximum ratings at TA = 25°C Reverse Gate Source & Reverse Gate Drain Voltage - 25 V Continuous Forward Gate Current 10 mA
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NJ26L
T0-226AA
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PDF
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Untitled
Abstract: No abstract text available
Text: 9 -9 7 B 17 2 N 4 8 6 7 , 2 N 4 8 67 A , 2 N 4 8 6 8 , 2 N 4 8 6 8 A , 2 N 4 8 6 9 , 2 N 4 8 6 9 A n^ h  n n Ë l s ÎÜ c Ô n T Ü n c t Î Ô ^ • AUDIO AMPLIFIERS e l d - e f f e c t t r  n s Îs t o r Absolute maximum ratings at Ta = 25°C Reverse Gate Source & Reverse Gate Drain Voltage
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300mW
2N4867
2N4S67A
2N4868
2N4868A
2N4869
2N4869A
2N4867
2N4867A
GDDC737
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PDF
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NPDS5566
Abstract: No abstract text available
Text: S E y i D D N P U C T 'G R NPDS5565 NPDS5566 N-Channel General Purpose Dual Amplifier Sourced from Process 96. Absolute Maximum Ratings* Symbol ,a Parameter Value Units V V dg Drain-Gate Voltage 40 V gs Gate-Source Voltage 40 V Igf Gate Current 10 mA T j , T S1g
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NPDS5565
NPDS5566
NPDS5566
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PDF
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HEXFETs FETs
Abstract: ALPS 102 lg motor DD ior 050a
Text: Data Sheet No. PD-9.397E INTERNATIONAL RECTIFIER IRFG911Q S N 7335 JA N T X 2N 7335 JA N T X V 2N 7335 HEXFET TRANSISTORS 4PCHANNEL POWER MOSFETs 14 LEAD DU AL-IN-LINE Q UAD C ER A M IC S ID E BRAZED PACKAGE [REF: MIL-S-19500/599] Product Summary -100 Volt, 1.4 Ohm (P-Channel)
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IRFG911Q
MIL-S-19500/599]
IRFG9110
-100V
I-243
HEXFETs FETs
ALPS 102
lg motor DD
ior 050a
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PDF
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ecg107
Abstract: AV13 ECG1131 T-77 GBU 08
Text: PHILIPS E C G INC 17E t.bS3T50 • • • • • • • • e TV C H RO M A SIG N A L AM PLIFIER T V Chroma S ig n a l A m p lif ie r Function A C C A m p lifie r Chroma S ig n a l A m p lifie r Burst G a te A m p lifie r A C C Peak D e te cto r C o lo r K ille r
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ECG1131
ECGI131
VCC-15V
S81GU
ECG1131
QQ0m31
106ST
ECQ1131
ecg107
AV13
T-77
GBU 08
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PDF
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SELF vk200
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF P o w er F ield -E ffect Transistor N-Channel Enhancement-Mode . . . designed for wideband large-signal amplifier and oscillator applications up to 400 MHz range. 5.0 W, to 400 MHz N-CHANNEL MOS BROADBAND RF POWER
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MRF134
68-ohm
AN215A
SELF vk200
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PDF
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Untitled
Abstract: No abstract text available
Text: UNITRODE CORP iS 9347963 DE § ^ 3 4 7 ^ 3 GDlD7flb •=] U N I T R O D E CORP 92D 10786 POWER MOSFET TRANSISTORS D/-37-'*' UFN1130 700 Volt, 3.5 Ohm N-Channel FEATURES DESCRIPTION This new Unitrode power MOSFET utilizes the latest high voltage advanced technology
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D/-37-'
UFN1130
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PDF
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H-312
Abstract: No abstract text available
Text: Data Sheet No. PD-9.679B INTERNATIONAL RECTIFIER IO R AVALANCHE ENERGY AND dv/dt RATED HEXFET TRANSISTORS IRHIM7250 IRHN8S50 N-CHANNEL MEGA RAD HARD 200 Volt, 0.10», MEGA RAD HARD HEXFET International Rectifier’s M EG A RAD HARD Technology HEXFETs demonstrate excellent threshold voltage stability
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IRHIM7250
IRHN8S50
H-321
IRHN7250,
IRHN8250
H-322
H-312
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PDF
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Untitled
Abstract: No abstract text available
Text: Ullli SGS-THOMSON [M O [M [ÍL iC T l iD © S SG3524 REGULATING PULSE WIDTH MODULATORS • COMPLETE PWM POWER CONTROL CIRCUI TRY ■ UNCOMMITTED O UTPUTS FOR SINGLE-ENDED OR PUSH PULL APPLICATIONS ■ LOW STANDBY CURRENT . 8 mA TYPICAL ■ OPERATION UP TO 300 KHz
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SG3524
SG1524,
SG2524,
SG3524
SG1524
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PDF
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N8230B
Abstract: H309 N8230
Text: Data Sheet No. PD-9.822A INTERNATIONAL RECTIFIER I O R AVALANCHE ENERGY AND dv/dt RATED HEXFET TRANSISTORS IRHN7230 IRHN8S30 N-CHANNEL s MEGA RAD HARD 200 Volt, 0.40Q, MEGA RAD HARD HEXFET International Rectifier’s M EGA RAD HARD Technology HEXFETs demonstrate excellent threshold voltage stability
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IRHN7230
IRHN8S30
1x105
1x106
H-309
IRHN7230,
IRHN8230
102l---------------------------------50
H-310
N8230B
H309
N8230
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PDF
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sega mega drive
Abstract: phct sega mega drive RF IRH7230 IRH8230
Text: Data Sheet No. PD-9.678A INTERNATIONAL RECTIFIER IO R REPETITIVE AVALANCHE AND dv/dt RATED IRH7S30 HEXFET TRANSISTORS Q „ IRH8S30 N-CHANNEL MEGA RAD HARD 200 Volt, 0.400, MEGA RAD HARD HEXFET International Rectifier's MEGA RAD HARD Technology HEXFETk demonstrate excellent threshold voltage stability and breakdown
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IRH7S30
1RH7230
IRH8230
d03es
1x10s
IRH7230,
sega mega drive
phct
sega mega drive RF
IRH7230
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PDF
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LF 13471
Abstract: UFN140
Text: UNITRODE CORP 9347963 U N I T R O D E CORP 92D 10612 07^ $f-/ 5 POWER MOSFET TRANSISTORS ¡j^jjo 100 Volt, 0.085 Ohm N-Channel UFN142 UFN143 FEATURES • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Temperature Stability
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UFN142
UFN143
UFN140
UFN141
LF 13471
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PDF
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UFN742
Abstract: N-Channel mosfet 400v to220 2314Y UFN741
Text: TS UNITRODE CORP 9347963 ë F | ‘i 3 M 7 cib3 DGlG7t.a b U N I T R O D E CORP 92D 10762 |~~ D T-" ^ ? V 3 POWER MOSFET TRANSISTORS 400 Volt, 0.55 Ohm N-Channel FEATURES • Compact Plastic Package • Fast Switching • Low Drive Current • Ease of Paralleling
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UFN742
UFN743
N-Channel mosfet 400v to220
2314Y
UFN741
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PDF
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H209
Abstract: H214
Text: Data Sheet No. PD-9.675A INTERNATIONAL RECTIFIER l l O R 1 REPETITIVE AVALANCHE AND dv/dt RATED IRHM7150 IRHM8150 HEXFET TRANSISTORS SN7S68 JANSRSN7SB8 JANSHSN7S68 N-CHANNEL MEGA RAD HARO 100 Volt, 0.06512, MEGA RAD HARD HEXFET Product Summary International Rectifier’s MEGA RAD HARD Technology HEXFETs
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IRHM7150
IRHM8150
SN7S68
JANSHSN7S68
1x106
1x105
IRHM71500
IRHM7150U
O-254
H209
H214
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PDF
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Untitled
Abstract: No abstract text available
Text: RF2418 MICRO »DEVICES ] LOW CURRENT LNA/MIXER Typical Applications • Commercial and Consumer Systems • Portable Battery Powered Equipment • General Purpose Frequency Conversion • UHF Digital and Analog Receivers • Digital Communications Systems
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RF2418
RF2418
7341-D
RF2418-10
RF2418-11
D01S7
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PDF
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h226
Abstract: 9713A
Text: Data Sheet No. PD-9.713A INTERNATIONAL RECTIFIER I Q R REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRHM7230 IRHM8230 N-CHANNEL MEGA RAD HARD 200 Volt, 0.40», MEGA RAD HARD HEXFET Product Summary International Rectifier’s MEGA RAD HARD Technology HEXFETs
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IRHM7230
IRHM8230
1x10s
1x106
IRHM7230D
IRHM7230U
O-254
MIL-S-19500
H-226
h226
9713A
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PDF
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te 2443 MOTOROLA transistor
Abstract: 1S2210 MOSFET 830 63 ng MRF171
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line 45 W N-C H A N N E L M O S BROADBAND RF POWER N-CHANNEL ENHANCEMENT-MODE RF POWER FIELD-EFFECT TRANSISTOR FET . designed p rim a rily fo r w ideband large-signal output and driver stages in the 2 .0 -2 0 0 MHz frequency range
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MRF171
MRF171
te 2443 MOTOROLA transistor
1S2210
MOSFET 830 63 ng
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PDF
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110B6
Abstract: ADC08064
Text: ADC08061/ ADC08062/ADC08064/ ADC08068 S 3 NSemiconductor a t io n a l ADC08061/ ADC08062/ADC08064/ADC08068 500 ns A/D Converter with S/H Function and Input Multiplexer General Description K ey Specifications Using a patented multi-step A /D conversion technique, the
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ADC08061
ADC08062/ADC08064/
ADC08068
ADC08061/
ADC08062/ADC08064/ADC08068
ADC08061,
ADC08062,
ADC08064,
ADC08068
110B6
ADC08064
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PDF
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