OC203
Abstract: No abstract text available
Text: APT 904RGN APT 1004HGN 900 1000 Drain-Source Voltage APT APT 904R2GN 1004R2GN 900 1000 UNIT Volts Continuous Drain Current @ Tc - 25 C 3.3 3.0 *0M Pulsed Drain Currant ® 13.2 12 V GS Gate-Source Voltage ±30 Volts Total Power Dissipation @ Tc » 25°C 100
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904RGN
1004HGN
904R2GN
1004R2GN
O-257AA
OC203
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Untitled
Abstract: No abstract text available
Text: ADVANCED POIilER T EC H N O L OGY b lE •K W/<m w POWER MOS IV D ■ OS ST TO T 000076«} T37 M A V P A d v a n ced po w er Te c h n o l o g y APT1004RCN 1000V 3.6A APT904RCN 900V 3.6A APT1004R2CN 1000V 3.3A APT904R2CN 900V 3.3A 4.00Q 4.00Q 4.20Q 4.20Q
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APT1004RCN
APT904RCN
APT1004R2CN
APT904R2CN
904RCN
1004RCN
904R2CN
1004R2CN
APT1004R/1
004R2GN
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sml1004r2Gn
Abstract: sml1004rgn
Text: SEM ELAB PLC bOE D • 0133107 0000Ô3G 234 « S t l L B MOS POWER 4 "T- SEME SML1004RGN SML904RGN SML1004R2GN 904R2GN LAB 1000V 900V 1000V 900V 4.0012 4.0012 4.2012 4.20Í2 3.3A 3.3A 3.0A 3.0A N -CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS
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SML1004RGN
SML904RGN
SML1004R2GN
SML904R2GN
904RGN
1004RGN
904R2GN
1004R2GN
O-257AA
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