OC203
Abstract: No abstract text available
Text: APT 904RGN APT 1004HGN 900 1000 Drain-Source Voltage APT APT 904R2GN 1004R2GN 900 1000 UNIT Volts Continuous Drain Current @ Tc - 25 C 3.3 3.0 *0M Pulsed Drain Currant ® 13.2 12 V GS Gate-Source Voltage ±30 Volts Total Power Dissipation @ Tc » 25°C 100
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904RGN
1004HGN
904R2GN
1004R2GN
O-257AA
OC203
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sml1004r2Cn
Abstract: sml1004rcn
Text: SEMELAB bDE PLC 61331Ô 7 ï 00007^4 III! M73 ISMLB MOS POWER 4 -13 llll SML1004RCN SML904RCN SML1004R2CN SML904R2CN SEME LAB 1000V 900V 1000V 900V 3.6A 3.6A 3.3A 3.3A 4.00Í1 4.00Q 4.2012 4.20Í2 N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS
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OCR Scan
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SML1004RCN
SML904RCN
SML1004R2CN
SML904R2CN
904RCN
1004RCN
904R2CN
1004R2CN
Factor04R2GN
100mS
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sml1004r2Gn
Abstract: sml1004rgn
Text: SEM ELAB PLC bOE D • 0133107 0000Ô3G 234 « S t l L B MOS POWER 4 "T- SEME SML1004RGN SML904RGN 1004R2GN SML904R2GN LAB 1000V 900V 1000V 900V 4.0012 4.0012 4.2012 4.20Í2 3.3A 3.3A 3.0A 3.0A N -CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS
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OCR Scan
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PDF
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SML1004RGN
SML904RGN
SML1004R2GN
SML904R2GN
904RGN
1004RGN
904R2GN
1004R2GN
O-257AA
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