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    Untitled

    Abstract: No abstract text available
    Text: 1/4 STRUCTURE Silicon Monolithic Integrated Circuit PRODUCTNAME BU7962GUW FUNCTION Serial Interface for Mobile Devices Application MSDL3 Mobile Shrink Data Link 3 Deserializer LSI FEATURES •Maximum transmission rate of highspeed differential interface MSDL3 is 900Mbps.


    Original     		PDF BU7962GUW 900Mbps. 24bit 30MHz R0039A

    PD10

    Abstract: fxs interface integrated circuit BU7962
    Text: 1/4 STRUCTURE Silicon Monolithic Integrated Circuit PRODUCTNAME BU7962GUW FUNCTION Serial Interface for Mobile Devices Application MSDL3 Mobile Shrink Data Link 3 Deserializer LSI FEATURES •Maximum transmission rate of highspeed differential interface MSDL3 is 900Mbps.


    Original     		PDF BU7962GUW 900Mbps. 24bit 30MHz R0039A PD10 fxs interface integrated circuit BU7962

    Untitled

    Abstract: No abstract text available
    Text: 1/4 STRUCTURE Silicon Monolithic Integrated Circuit PRODUCTNAME BU7961GUW FUNCTION Serial Interface for Mobile Devices Application MSDL3 Mobile Shrink Data Link 3 Serializer LSI FEATURES •Maximum transmission rate of highspeed differential interface MSDL3 is 900Mbps.


    Original     		PDF BU7961GUW 900Mbps. 24bit 30MHz. R0039A

    BU7961

    Abstract: PD10
    Text: 1/4 STRUCTURE Silicon Monolithic Integrated Circuit PRODUCTNAME BU7961GUW FUNCTION Serial Interface for Mobile Devices Application MSDL3 Mobile Shrink Data Link 3 Serializer LSI FEATURES •Maximum transmission rate of highspeed differential interface MSDL3 is 900Mbps.


    Original     		PDF BU7961GUW 900Mbps. 24bit 30MHz. R0039A BU7961 PD10

    LVDS to MIPI CSI

    Abstract: LVDS to mipi bridge MIPI csi-2 mipi csi-2 receiver mipi csi receiver MIPI D-PHY mipi csi-2 transmitter MIPI csi bridge 400x240 MIPI csi-2 receivers
    Text: DS90UR910Q 10 - 75 MHz 24-bit Color FPD-Link II to CSI-2 Converter General Description Features The DS90UR910Q is an interface bridge chip that recovers data from the FPD-Link II serial bit stream and converts into a Camera Serial Interface CSI-2 format compatible with Mobile Industry Processor Interface (MIPI) specifications. It recovers the 24- or 18-bit RGB data and 3 video sync-signals


    Original     		PDF DS90UR910Q 24-bit DS90UR910Q 18-bit SQA40A LVDS to MIPI CSI LVDS to mipi bridge MIPI csi-2 mipi csi-2 receiver mipi csi receiver MIPI D-PHY mipi csi-2 transmitter MIPI csi bridge 400x240 MIPI csi-2 receivers

    k4n26323ae

    Abstract: K4N26 K4N26323AE-GC20 K4N26323AE-GC22 K4N26323AE-GC25
    Text: 128M GDDR2 SDRAM K4N26323AE-GC 128Mbit GDDR2 SDRAM 1M x 32Bit x 4 Banks GDDR2 SDRAM with Differential Data Strobe and DLL Revision 1.7 January 2003 Samsung Electronics reserves the right to change products or specification without notice. - 1 - Rev. 1.7 Jan. 2003


    Original     		PDF K4N26323AE-GC 128Mbit 32Bit k4n26323ae K4N26 K4N26323AE-GC20 K4N26323AE-GC22 K4N26323AE-GC25

    Untitled

    Abstract: No abstract text available
    Text: 256M gDDR2 SDRAM K4N56163QG 256Mbit gDDR2 SDRAM Revision 1.1 April 2006 Notice INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K4N56163QG 256Mbit

    16 QAM modulation matlab code

    Abstract: lx5280 CZ80PIO PLD-10 uart 8250 CRC matlab lEXRA lx5280 qpsk simulink matlab OFDM DSP Builder Alcatel dsp
    Text: インテレクチャル・プロパティ・ セレクタ・ガイド System-on-a-Programmable-Chipソリューションの ためのIPファンクション アルテラのIPファンクションについて 数百万ゲートのプログラマブル・ロジック・デバイス（PLD）の登


    Original     		PDF AMPP15 16 QAM modulation matlab code lx5280 CZ80PIO PLD-10 uart 8250 CRC matlab lEXRA lx5280 qpsk simulink matlab OFDM DSP Builder Alcatel dsp

    gddr5

    Abstract: K4N51163QC-ZC K4N51163QC-ZC25 K4N51163QC-ZC2A K4N51163QC-ZC33 K4N51163QC-ZC36
    Text: 512M gDDR2 SDRAM K4N51163QC-ZC 512Mbit gDDR2 SDRAM Revision 1.5 October 2005 Notice INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K4N51163QC-ZC 512Mbit gddr5 K4N51163QC-ZC K4N51163QC-ZC25 K4N51163QC-ZC2A K4N51163QC-ZC33 K4N51163QC-ZC36

    Untitled

    Abstract: No abstract text available
    Text: HY5DW573222F P 256M(8Mx32) GDDR SDRAM HY5DW573222F(P) This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied.


    Original     		PDF HY5DW573222F 8Mx32) 500Mhz 450Mhz 144ball 55Max

    K4N56163QI-ZC25

    Abstract: No abstract text available
    Text: 256M gDDR2 SDRAM K4N56163QI 256Mbit gDDR2 SDRAM Revision 1.1 May 2007 Notice INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K4N56163QI 256Mbit K4N56163QI-ZC25

    HY5PS121621BFP

    Abstract: HY5PS121621B HY5PS121621BFP-2
    Text: HY5PS121621BFP 512Mb 32Mx16 gDDR2 SDRAM HY5PS121621BFP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.


    Original     		PDF HY5PS121621BFP 512Mb 32Mx16) 1HY5PS121621BFP 300Mhz 400Mhz 500MHz 84Ball HY5PS121621BFP HY5PS121621B HY5PS121621BFP-2

    Untitled

    Abstract: No abstract text available
    Text: HY5RS573225F 256M 8Mx32 GDDR3 SDRAM HY5RS573225F This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.6 / Oct. 2004


    Original     		PDF HY5RS573225F 8Mx32) 240ohm 240ohms

    Untitled

    Abstract: No abstract text available
    Text: HY5PS121621BFP 512Mb 32Mx16 DDR2 SDRAM HY5PS121621BFP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.


    Original     		PDF HY5PS121621BFP 512Mb 32Mx16) 1HY5PS121621BFP 300Mhz 400Mhz 500MHz 450MHz/500MHz)

    HY5PS561621AFP-33

    Abstract: No abstract text available
    Text: HY5PS561621AF P 256Mb(16Mx16) gDDR2 SDRAM HY5PS561621AF(P) This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.


    Original     		PDF HY5PS561621AF 256Mb 16Mx16) 1HY5PS561621AF 300Mhz 84Ball HY5PS561621AFP-33

    Untitled

    Abstract: No abstract text available
    Text: HY5PS561621AFP 256Mb 16Mx16 gDDR2 SDRAM HY5PS561621AFP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.


    Original     		PDF HY5PS561621AFP 256Mb 16Mx16) 1HY5PS561621AFP 300Mhz 450MHz) HY5PS56ance 84Ball

    Untitled

    Abstract: No abstract text available
    Text: 512M gDDR2 SDRAM K4N51163QE 512Mbit gDDR2 SDRAM Revision 1.3 August 2007 Notice INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K4N51163QE 512Mbit

    amcc volta

    Abstract: No abstract text available
    Text: S4814PBI21 Volta 48 FINAL Datasheet Revision 1.13 November 21, 2005 AMCC - PROPRIETARY AND CONFIDENTIAL RESTRICTED DISTRIBUTION NDA REQUIRED Disclaimer: AMCC is providing information within this data sheet relating to LCAS mode in which a customer may choose to operate the Volta. The data set forth


    Original     		PDF S4814PBI21 amcc volta

    K4N56163QF-GC37

    Abstract: K4N56163QF-ZC gddr5 JESD51-2 K4N56163QF-GC K4N56163QF-GC25 K4N56163QF-GC30
    Text: 256M gDDR2 SDRAM K4N56163QF-GC 256Mbit gDDR2 SDRAM Revision 1.6 April 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K4N56163QF-GC 256Mbit K4N56163QF-GC37 K4N56163QF-ZC gddr5 JESD51-2 K4N56163QF-GC K4N56163QF-GC25 K4N56163QF-GC30

    HY5DW573222F

    Abstract: No abstract text available
    Text: HY5DW573222F 256M 8Mx32 GDDR SDRAM HY5DW573222F This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.2 / Feb. 2004


    Original     		PDF HY5DW573222F 8Mx32) HY5DW573222 456-bit 8Mx32 144ball HY5DW573222F

    HY5DU113222FM

    Abstract: No abstract text available
    Text: HY5DU113222FM P 512M(16Mx32) GDDR SDRAM HY5DU113222FM(P) This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied.


    Original     		PDF HY5DU113222FM 16Mx32) 912-bit 256Mbit 144ball

    HY5DU283222AF-33

    Abstract: HY5DU283222AF HY5DU283222AF-2 HY5DU283222AF-22 HY5DU283222AF-25 HY5DU283222AF-28 HY5DU283222AF-36
    Text: HY5DU283222AF P 128M(4Mx32) DDR SDRAM HY5DU283222AF(P) This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied.


    Original     		PDF HY5DU283222AF 4Mx32) HY5DU283222AF-33/36 222MHz HY5DU283222AF-36 HY5DU283222AF-36 HY5DU283222AF-28/33 HY5DU283222AF-33 HY5DU283222AF-2 HY5DU283222AF-22 HY5DU283222AF-25 HY5DU283222AF-28

    HY5DU283222AF

    Abstract: HY5DU283222AF-2 HY5DU283222AF-28 HY5DU283222AF-36 termal resistor 250 HY5DU283222AFP-33
    Text: HY5DU283222AF P 128M(4Mx32) GDDR SDRAM HY5DU283222AF(P) This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied.


    Original     		PDF HY5DU283222AF 4Mx32) 500MHz 222MHz HY5DU283222AF-36 HY5DU283222AF-36 HY5DU283222AF-28/33 HY5DU283222AF-2 HY5DU283222AF-28 termal resistor 250 HY5DU283222AFP-33

    Untitled

    Abstract: No abstract text available
    Text: 256M GDDR SDRAM K4D553235F-GC 256Mbit GDDR SDRAM 2M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL 144-Ball FBGA Revision 1.1 December 2004 Samsung Electronics reserves the right to change products or specification without notice.


    Original     		PDF K4D553235F-GC 256Mbit 32Bit 144-Ball K4D553235F-GC20 400MHz -GJ25 -GC25